We investigated the influence of aluminum concentration in the AlGaN cap layer on the stability of threshold voltage under gate and drain stress voltages. The devices examined are N-polar GaN MIS-HEMTs with a 2.6nm layer of AlxGa1-xN cap under the gate contact. The devices have three different Al concentration (x=22%, x=34%, x=46%) in the AlGaN cap layer. DC measurements show that the devices with a higher Al concentration have a lower gate leakage current. In this work we found out: 1) the amount of threshold voltage shift during stress in these devices increases linearly with the value of gate leakage current at the different bias conditions 2) a higher Al percentage in AlGaN cap layer can suppress gate leakage current and thus reduce the instability of threshold voltage under high gate and drain filling voltages.

Detrapping Kinetics in N-polar AlGaN/GaN MIS-HEMTs

Chiocchetta, F;De Santi, C;Sharma, C;Rampazzo, F;Meneghesso, G;Meneghini, M;Zanoni, E
2021

Abstract

We investigated the influence of aluminum concentration in the AlGaN cap layer on the stability of threshold voltage under gate and drain stress voltages. The devices examined are N-polar GaN MIS-HEMTs with a 2.6nm layer of AlxGa1-xN cap under the gate contact. The devices have three different Al concentration (x=22%, x=34%, x=46%) in the AlGaN cap layer. DC measurements show that the devices with a higher Al concentration have a lower gate leakage current. In this work we found out: 1) the amount of threshold voltage shift during stress in these devices increases linearly with the value of gate leakage current at the different bias conditions 2) a higher Al percentage in AlGaN cap layer can suppress gate leakage current and thus reduce the instability of threshold voltage under high gate and drain filling voltages.
2021
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)
978-1-6654-0182-1
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3455105
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