FORNASIER, MIRKO
 Distribuzione geografica
Continente #
EU - Europa 179
AS - Asia 152
NA - Nord America 113
SA - Sud America 2
AF - Africa 1
Totale 447
Nazione #
US - Stati Uniti d'America 109
IT - Italia 107
SG - Singapore 62
DE - Germania 24
TW - Taiwan 21
HK - Hong Kong 19
CN - Cina 17
IN - India 17
PL - Polonia 8
BE - Belgio 7
FI - Finlandia 7
NL - Olanda 7
JP - Giappone 6
GB - Regno Unito 4
IL - Israele 4
KR - Corea 4
CA - Canada 3
FR - Francia 3
AT - Austria 2
BG - Bulgaria 2
BR - Brasile 2
ES - Italia 2
RU - Federazione Russa 2
SE - Svezia 2
EG - Egitto 1
GR - Grecia 1
LT - Lituania 1
MX - Messico 1
PK - Pakistan 1
TR - Turchia 1
Totale 447
Città #
Padova 57
Santa Clara 31
Singapore 30
Hong Kong 13
Boardman 11
Nuremberg 8
Turin 8
Warsaw 8
Chennai 7
Hsinchu 7
Beijing 6
Riese Pio X 6
Galliate Lombardo 5
Helsinki 5
Agordo 4
Ashburn 4
Berlin 4
Brussels 4
Delhi 4
Nijmegen 4
Taichung 4
Taipei City 4
Tokyo 4
Casier 3
Cervarese Santa Croce 3
Kwun Hang 3
Ma On Shan 3
Neustadt in Holstein 3
Patna 3
San Jose 3
Taipei 3
Yangmei District 3
Amsterdam 2
Azzano Decimo 2
Belluno 2
Bengaluru 2
Buffalo 2
Cambridge 2
Cardiff 2
Falkenstein 2
Fort Worth 2
Fossò 2
Haifa 2
Lappeenranta 2
Legnago 2
Manassas 2
Milan 2
Mölndal 2
Rome 2
Ronse 2
Santa Barbara 2
Santander 2
Sofia 2
Tel Aviv 2
Toronto 2
Treviso 2
Venice 2
Cairo 1
Calgary 1
Chandler 1
Dallas 1
Grenoble 1
Higashimukōjima 1
Istanbul 1
Kanpur 1
Lahore 1
Leuven 1
Los Angeles 1
Mestrino 1
Nakanobu 1
Pacajus 1
Pittsburgh 1
Seattle 1
Senftenberg 1
Spring 1
São Paulo 1
Villach 1
Yongin-si 1
Zandobbio 1
Totale 337
Nome #
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications 107
Modeling of the Optical and Electrical Degradation of 845 nm VCSILs 76
Hot-electron trapping and electric field redistribution in 0.15 µm RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier 64
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects 33
Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs 31
Thermally-activated failure mechanisms of 0.25 μm RF AlGaN/GaN HEMTs submitted to long-term life tests 30
Analysis of defect-related optical degradation of VCSILs for photonic integrated circuits 30
Analysis of trapping and detrapping mechanisms in 0.15 μm-gate AlGaN/GaN High Electron Mobility Transistors: explanation of dynamic behaviour of threshold voltage and on-resistance 26
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability 23
Understanding the Optical Degradation of 845 nm Micro-Transfer-Printed VCSILs for Photonic Integrated Circuits 22
Dynamic Behavior of Threshold Voltage and ID–VDS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect 18
Totale 460
Categoria #
all - tutte 2.688
article - articoli 887
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.575


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2022/202393 0 0 0 0 10 1 4 5 7 0 48 18
2023/2024143 23 24 14 9 8 15 10 10 4 9 7 10
2024/2025224 2 27 16 23 35 35 18 43 25 0 0 0
Totale 460