FORNASIER, MIRKO
 Distribuzione geografica
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Continente #
EU - Europa 348
AS - Asia 315
NA - Nord America 239
AF - Africa 51
SA - Sud America 45
Continente sconosciuto - Info sul continente non disponibili 5
OC - Oceania 4
Totale 1.007
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Nazione #
US - Stati Uniti d'America 201
IT - Italia 128
SG - Singapore 86
DE - Germania 63
HK - Hong Kong 58
CN - Cina 48
BR - Brasile 32
PL - Polonia 32
FI - Finlandia 29
TW - Taiwan 22
IN - India 19
NL - Olanda 15
KR - Corea 11
VN - Vietnam 11
FR - Francia 10
GB - Regno Unito 9
AT - Austria 8
BE - Belgio 7
CA - Canada 7
JP - Giappone 6
PS - Palestinian Territory 6
SE - Svezia 6
RU - Federazione Russa 5
AL - Albania 4
CD - Congo 4
CH - Svizzera 4
IL - Israele 4
JO - Giordania 4
LC - Santa Lucia 4
MX - Messico 4
AR - Argentina 3
AU - Australia 3
CU - Cuba 3
CW - ???statistics.table.value.countryCode.CW??? 3
DK - Danimarca 3
DZ - Algeria 3
EG - Egitto 3
ES - Italia 3
GH - Ghana 3
ID - Indonesia 3
IR - Iran 3
JM - Giamaica 3
LB - Libano 3
PE - Perù 3
PY - Paraguay 3
TJ - Tagikistan 3
TR - Turchia 3
TT - Trinidad e Tobago 3
UA - Ucraina 3
UZ - Uzbekistan 3
BG - Bulgaria 2
BZ - Belize 2
CV - Capo Verde 2
CZ - Repubblica Ceca 2
DJ - Gibuti 2
GA - Gabon 2
GE - Georgia 2
GN - Guinea 2
HN - Honduras 2
HU - Ungheria 2
IQ - Iraq 2
KE - Kenya 2
KG - Kirghizistan 2
KZ - Kazakistan 2
LT - Lituania 2
LU - Lussemburgo 2
LY - Libia 2
MA - Marocco 2
MD - Moldavia 2
MG - Madagascar 2
NG - Nigeria 2
RE - Reunion 2
SY - Repubblica araba siriana 2
TH - Thailandia 2
UG - Uganda 2
UY - Uruguay 2
XK - ???statistics.table.value.countryCode.XK??? 2
ZM - Zambia 2
AE - Emirati Arabi Uniti 1
AF - Afghanistan, Repubblica islamica di 1
AG - Antigua e Barbuda 1
AO - Angola 1
AZ - Azerbaigian 1
BB - Barbados 1
BD - Bangladesh 1
BF - Burkina Faso 1
BJ - Benin 1
BS - Bahamas 1
BY - Bielorussia 1
CI - Costa d'Avorio 1
CM - Camerun 1
DM - Dominica 1
DO - Repubblica Dominicana 1
GF - Guiana Francese 1
GP - Guadalupe 1
GR - Grecia 1
GT - Guatemala 1
LV - Lettonia 1
ME - Montenegro 1
MN - Mongolia 1
Totale 985
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Città #
Padova 57
Singapore 53
Hong Kong 51
Ashburn 48
Munich 36
Santa Clara 35
Turku 21
Bytom 19
Beijing 16
Padua 16
Warsaw 12
Boardman 11
Hefei 11
Nuremberg 11
Hsinchu 8
Turin 8
Chennai 7
Guyancourt 6
Riese Pio X 6
Buffalo 5
Galliate Lombardo 5
Helsinki 5
Ho Chi Minh City 5
Los Angeles 5
Seoul 5
Vienna 5
Agordo 4
Berlin 4
Brussels 4
Castries 4
Council Bluffs 4
Delhi 4
Nablus 4
New York 4
Nijmegen 4
San Jose 4
São Paulo 4
Taichung 4
Taipei City 4
Tokyo 4
Accra 3
Amman 3
Bengaluru 3
Casier 3
Cervarese Santa Croce 3
Copenhagen 3
Dushanbe 3
Kingston 3
Kinshasa 3
Kwun Hang 3
Lausanne 3
Ma On Shan 3
Neustadt in Holstein 3
Patna 3
Redondo Beach 3
Rome 3
Stockholm 3
Sydney 3
Taipei 3
Toronto 3
Willemstad 3
Yangmei District 3
Amsterdam 2
Antananarivo 2
Azzano Decimo 2
Belluno 2
Belo Horizonte 2
Bishkek 2
Brooklyn 2
Cambridge 2
Cardiff 2
Conakry 2
Djibouti 2
Falkenstein 2
Fort Worth 2
Fossò 2
Haifa 2
Haiphong 2
Havana 2
Istanbul 2
Lagos 2
Lappeenranta 2
Legnago 2
Libreville 2
Lusaka 2
Manassas 2
Milan 2
Modena 2
Montevideo 2
Mölndal 2
Nairobi 2
Praia 2
Ronse 2
Santa Barbara 2
Santander 2
Seattle 2
Sofia 2
Tashkent 2
Tbilisi 2
Tel Aviv 2
Totale 665
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Nome #
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications 175
Modeling of the Optical and Electrical Degradation of 845 nm VCSILs 122
Hot-electron trapping and electric field redistribution in 0.15 µm RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier 105
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects 80
Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs 78
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability 77
Thermally-activated failure mechanisms of 0.25 μm RF AlGaN/GaN HEMTs submitted to long-term life tests 69
Analysis of trapping and detrapping mechanisms in 0.15 μm-gate AlGaN/GaN High Electron Mobility Transistors: explanation of dynamic behaviour of threshold voltage and on-resistance 69
Analysis of defect-related optical degradation of VCSILs for photonic integrated circuits 64
Understanding the Optical Degradation of 845 nm Micro-Transfer-Printed VCSILs for Photonic Integrated Circuits 63
Self-Induced Photoionization of Traps in Buffer-Free AlGaN/GaN HEMTs 62
Dynamic Behavior of Threshold Voltage and ID–VDS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect 57
Totale 1.021
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Categoria #
all - tutte 3.803
article - articoli 1.358
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.161
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2022/202393 0 0 0 0 10 1 4 5 7 0 48 18
2023/2024143 23 24 14 9 8 15 10 10 4 9 7 10
2024/2025450 2 27 16 23 35 35 18 43 25 8 82 136
2025/2026335 121 78 136 0 0 0 0 0 0 0 0 0
Totale 1.021