statistiche ricercatore

Nome	#
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications	90
Modeling of the Optical and Electrical Degradation of 845 nm VCSILs	68
Hot-electron trapping and electric field redistribution in 0.15 µm RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier	52
Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs	23
Analysis of defect-related optical degradation of VCSILs for photonic integrated circuits	22
Thermally-activated failure mechanisms of 0.25 μm RF AlGaN/GaN HEMTs submitted to long-term life tests	21
Analysis of trapping and detrapping mechanisms in 0.15 μm-gate AlGaN/GaN High Electron Mobility Transistors: explanation of dynamic behaviour of threshold voltage and on-resistance	19
Understanding the Optical Degradation of 845 nm Micro-Transfer-Printed VCSILs for Photonic Integrated Circuits	15
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects	14
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability	13
Dynamic Behavior of Threshold Voltage and ID–VDS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect	12
Totale	349

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2022/2023	93	0	0	0	0	10	1	4	5	7	0	48	18
2023/2024	143	23	24	14	9	8	15	10	10	4	9	7	10
2024/2025	113	2	27	16	23	35	10	0	0	0	0	0	0
Totale													349