FORNASIER, MIRKO
 Distribuzione geografica
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Continente #
AS - Asia 807
NA - Nord America 641
EU - Europa 503
AF - Africa 113
SA - Sud America 82
Continente sconosciuto - Info sul continente non disponibili 20
OC - Oceania 9
Totale 2.175
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Nazione #
US - Stati Uniti d'America 572
SG - Singapore 213
IT - Italia 163
CN - Cina 156
VN - Vietnam 150
DE - Germania 68
HK - Hong Kong 67
PL - Polonia 48
BR - Brasile 44
IN - India 39
FI - Finlandia 34
FR - Francia 34
TW - Taiwan 33
NL - Olanda 22
BD - Bangladesh 21
GB - Regno Unito 19
BJ - Benin 14
CA - Canada 14
ES - Italia 12
KR - Corea 12
AR - Argentina 10
AT - Austria 10
JP - Giappone 10
RU - Federazione Russa 10
CH - Svizzera 9
MX - Messico 9
BE - Belgio 8
TR - Turchia 8
IQ - Iraq 7
JO - Giordania 7
LC - Santa Lucia 7
TT - Trinidad e Tobago 7
AU - Australia 6
AZ - Azerbaigian 6
EG - Egitto 6
ID - Indonesia 6
IL - Israele 6
PS - Palestinian Territory 6
SE - Svezia 6
CD - Congo 5
CV - Capo Verde 5
CZ - Repubblica Ceca 5
DZ - Algeria 5
GA - Gabon 5
GN - Guinea 5
KZ - Kazakistan 5
LB - Libano 5
MD - Moldavia 5
PE - Perù 5
PH - Filippine 5
UA - Ucraina 5
UZ - Uzbekistan 5
AL - Albania 4
BA - Bosnia-Erzegovina 4
CW - ???statistics.table.value.countryCode.CW??? 4
DK - Danimarca 4
DO - Repubblica Dominicana 4
EC - Ecuador 4
IR - Iran 4
JM - Giamaica 4
KG - Kirghizistan 4
LY - Libia 4
MA - Marocco 4
PY - Paraguay 4
TJ - Tagikistan 4
AE - Emirati Arabi Uniti 3
AO - Angola 3
BG - Bulgaria 3
CL - Cile 3
CR - Costa Rica 3
CU - Cuba 3
ET - Etiopia 3
GH - Ghana 3
GT - Guatemala 3
HN - Honduras 3
HU - Ungheria 3
KE - Kenya 3
LT - Lituania 3
ME - Montenegro 3
NG - Nigeria 3
NP - Nepal 3
PK - Pakistan 3
RE - Reunion 3
TH - Thailandia 3
TZ - Tanzania 3
UG - Uganda 3
VE - Venezuela 3
ZA - Sudafrica 3
AF - Afghanistan, Repubblica islamica di 2
BF - Burkina Faso 2
BO - Bolivia 2
BZ - Belize 2
CG - Congo 2
CI - Costa d'Avorio 2
CM - Camerun 2
CO - Colombia 2
DJ - Gibuti 2
GE - Georgia 2
GF - Guiana Francese 2
GP - Guadalupe 2
Totale 2.089
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Città #
San Jose 141
Singapore 117
Ashburn 116
Padova 57
Hong Kong 54
Santa Clara 49
Hanoi 41
Ho Chi Minh City 41
Munich 36
Beijing 29
Warsaw 26
Turku 23
Los Angeles 22
Padua 20
Bytom 19
New York 16
Cotonou 14
Chennai 13
Hefei 13
Lauterbourg 12
Boardman 11
Nuremberg 11
Haiphong 9
Buffalo 8
Da Nang 8
Hsinchu 8
Rome 8
Turin 8
Bengaluru 7
Castries 7
Helsinki 7
Taipei 7
Tokyo 7
Vienna 7
Amsterdam 6
Guyancourt 6
Milan 6
Riese Pio X 6
Sydney 6
Amman 5
Atlanta 5
Brussels 5
Bắc Ninh 5
Conakry 5
Council Bluffs 5
Delhi 5
Galliate Lombardo 5
Libreville 5
Orem 5
Seoul 5
Agordo 4
Baku 4
Berlin 4
Bishkek 4
Buenos Aires 4
Cairo 4
Can Tho 4
Chicago 4
Dallas 4
Houston 4
Kinshasa 4
Lancy 4
Montreal 4
Nablus 4
Nijmegen 4
Phoenix 4
Poplar 4
Saint-Etienne 4
São Paulo 4
Taichung 4
Taipei City 4
Tashkent 4
Vũng Tàu 4
Willemstad 4
Accra 3
Addis Ababa 3
Brooklyn 3
Bến Tre 3
Cambridge 3
Cardiff 3
Casier 3
Cervarese Santa Croce 3
Chisinau 3
Copenhagen 3
Denver 3
Detroit 3
Dushanbe 3
Frankfurt am Main 3
Guangzhou 3
Haifa 3
Istanbul 3
Kingston 3
Kwun Hang 3
Lappeenranta 3
Lausanne 3
Lima 3
Luanda 3
Ma On Shan 3
Nairobi 3
Naples 3
Totale 1.231
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Nome #
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications 276
Thermally-activated failure mechanisms of 0.25 μm RF AlGaN/GaN HEMTs submitted to long-term life tests 208
Self-Induced Photoionization of Traps in Buffer-Free AlGaN/GaN HEMTs 206
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects 197
Hot-electron trapping and electric field redistribution in 0.15 µm RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier 187
Modeling of the Optical and Electrical Degradation of 845 nm VCSILs 183
Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs 161
Understanding the Optical Degradation of 845 nm Micro-Transfer-Printed VCSILs for Photonic Integrated Circuits 161
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability 160
Dynamic Behavior of Threshold Voltage and ID–VDS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect 151
Analysis of trapping and detrapping mechanisms in 0.15 μm-gate AlGaN/GaN High Electron Mobility Transistors: explanation of dynamic behaviour of threshold voltage and on-resistance 149
Analysis of defect-related optical degradation of VCSILs for photonic integrated circuits 136
Totale 2.175
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Categoria #
all - tutte 6.070
article - articoli 2.338
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 8.408
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2022/202393 0 0 0 0 10 1 4 5 7 0 48 18
2023/2024143 23 24 14 9 8 15 10 10 4 9 7 10
2024/2025450 2 27 16 23 35 35 18 43 25 8 82 136
2025/20261.429 121 78 153 193 137 68 240 132 132 71 64 40
2026/202760 51 9 0 0 0 0 0 0 0 0 0 0
Totale 2.175