GRIFFONI, ALESSIO
 Distribuzione geografica
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Continente #
NA - Nord America 6.137
EU - Europa 1.719
AS - Asia 1.061
AF - Africa 178
SA - Sud America 121
OC - Oceania 19
Continente sconosciuto - Info sul continente non disponibili 5
Totale 9.240
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Nazione #
US - Stati Uniti d'America 5.408
DE - Germania 774
CA - Canada 660
GB - Regno Unito 516
SG - Singapore 399
CN - Cina 188
VN - Vietnam 132
HK - Hong Kong 99
FI - Finlandia 86
BR - Brasile 61
PL - Polonia 54
IT - Italia 49
FR - Francia 41
IN - India 33
JP - Giappone 32
UA - Ucraina 32
BJ - Benin 24
RU - Federazione Russa 18
IQ - Iraq 17
SE - Svezia 17
AR - Argentina 13
BD - Bangladesh 13
TR - Turchia 13
EC - Ecuador 11
ID - Indonesia 11
MA - Marocco 11
AT - Austria 10
NL - Olanda 10
SA - Arabia Saudita 10
HU - Ungheria 9
IE - Irlanda 9
TN - Tunisia 9
ET - Etiopia 8
PK - Pakistan 8
AU - Australia 7
AZ - Azerbaigian 7
IR - Iran 7
RO - Romania 7
RS - Serbia 7
CO - Colombia 6
DZ - Algeria 6
EE - Estonia 6
JO - Giordania 6
KE - Kenya 6
KZ - Kazakistan 6
LA - Repubblica Popolare Democratica del Laos 6
LY - Libia 6
MX - Messico 6
NP - Nepal 6
PA - Panama 6
RW - Ruanda 6
SK - Slovacchia (Repubblica Slovacca) 6
TT - Trinidad e Tobago 6
AD - Andorra 5
AO - Angola 5
BY - Bielorussia 5
CL - Cile 5
CR - Costa Rica 5
CU - Cuba 5
DJ - Gibuti 5
ES - Italia 5
GM - Gambi 5
JM - Giamaica 5
KH - Cambogia 5
LC - Santa Lucia 5
MK - Macedonia 5
MU - Mauritius 5
MZ - Mozambico 5
NA - Namibia 5
NG - Nigeria 5
PE - Perù 5
PH - Filippine 5
PS - Palestinian Territory 5
SN - Senegal 5
TW - Taiwan 5
VE - Venezuela 5
ZA - Sudafrica 5
AE - Emirati Arabi Uniti 4
BE - Belgio 4
CV - Capo Verde 4
CW - ???statistics.table.value.countryCode.CW??? 4
DK - Danimarca 4
DO - Repubblica Dominicana 4
EG - Egitto 4
GF - Guiana Francese 4
GR - Grecia 4
KG - Kirghizistan 4
KR - Corea 4
LB - Libano 4
MR - Mauritania 4
NI - Nicaragua 4
SI - Slovenia 4
SY - Repubblica araba siriana 4
TH - Thailandia 4
TJ - Tagikistan 4
UY - Uruguay 4
UZ - Uzbekistan 4
ZW - Zimbabwe 4
AM - Armenia 3
BB - Barbados 3
Totale 9.114
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Città #
Munich 730
Montréal 644
Mcallen 538
Singapore 229
Fairfield 226
San Jose 218
Woodbridge 188
Ashburn 183
Jacksonville 158
Houston 131
Ann Arbor 110
Wilmington 90
Hong Kong 87
Seattle 81
Cambridge 79
Chandler 77
Santa Clara 61
Helsinki 58
Bytom 40
Boardman 34
Ho Chi Minh City 31
Princeton 31
Hanoi 29
Beijing 28
Tokyo 28
Los Angeles 25
Cotonou 24
San Diego 23
Lauterbourg 21
Medford 17
Roxbury 17
Dong Ket 15
Des Moines 13
Nanjing 13
New York 13
Guangzhou 11
Council Bluffs 10
Orem 10
Hebei 9
Warsaw 8
Baghdad 7
Baku 7
Shanghai 7
Addis Ababa 6
Amman 6
Amsterdam 6
Cagliari 6
Changsha 6
Dublin 6
Kigali 6
Mestre 6
Nairobi 6
Panama City 6
Rio de Janeiro 6
Rome 6
Shenyang 6
Vientiane 6
Andorra la Vella 5
Atlanta 5
Brooklyn 5
Can Tho 5
Casablanca 5
Da Nang 5
Dhaka 5
Falkenstein 5
Guayaquil 5
Haiphong 5
Lagos 5
London 5
Luanda 5
Milan 5
Mumbai 5
Phnom Penh 5
Riyadh 5
San José 5
Sydney 5
Tallinn 5
Tunis 5
Biên Hòa 4
Buffalo 4
Castries 4
Dakar 4
Dushanbe 4
Harare 4
Havana 4
Managua 4
Medina 4
Montevideo 4
Montreal 4
Nanchang 4
Nouakchott 4
Nuremberg 4
Port of Spain 4
Praia 4
Quito 4
Tashkent 4
Tianjin 4
Toronto 4
Vienna 4
Willemstad 4
Totale 4.636
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Nome #
ESD Sensitivity of 65nm Fully Depleted SOI MOSFETs with Different Strain-Inducing Techniques 1.695
ESD Constraints of Bulk FinFET in Comparison with SOI FinFET Structures 1.465
Next Generation FinFET Devices in Bulk Silicon Technology and Their Benefits for ESD Robustness 1.106
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 801
An Insight into effects Induced by Heavy-Ion Strikes in SCR ESD Protection Structures 745
Electrical-Based ESD Characterization of Ultrathin-Body SOI MOSFETs 310
ESD and Ionizing Radiation Effects on Ultrathin Body SOI and Multiple Gate Technologies 272
A Statistical Approach to Microdose Induced Degradation in FinFET Devices 260
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 256
Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs 249
Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs 231
Microdose and Breakdown Effects Induced by Heavy Ions on sub 20-nm Triple-Gate SOI FETs 190
Impact of Strain on ESD Robustness of FinFET Devices 189
Impact of radiation on the operation and reliability of deep submicron CMOS 177
Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 170
Electrostatic Discharge Effects In Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques 155
Angular and strain dependence of heavy-ions induced degradation in SOI FinFETs2009 European Conference on Radiation and Its Effects on Components and Systems 143
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide 140
Impact of radiation on the operation and reliability of deep submicron CMOS 131
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 129
Multi-gate devices for the 32-nm node and beyond: advantages and issues 123
On-Wafer Human Metal Model Measurements for System-Level ESD Analysis on Component Level 110
An Insight into the Parasitic Capacitances of SOI and Bulk FinFET Devices 108
Ionizing Radiation Effects on Advanced CMOS Devices and on ESD Protection Structures for CMOS Technology 92
Totale 9.247
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Categoria #
all - tutte 16.890
article - articoli 5.039
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 21.929
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202125 0 0 0 0 0 0 0 0 0 0 0 25
2021/2022237 0 31 39 6 7 12 3 21 17 8 42 51
2022/2023211 36 2 2 20 42 42 1 22 28 1 10 5
2023/2024101 11 20 7 11 3 5 2 10 0 5 11 16
2024/20253.422 2.581 264 13 28 93 39 61 78 57 29 95 84
2025/20261.778 71 152 218 257 231 82 207 221 152 138 42 7
Totale 9.247