GRIFFONI, ALESSIO
 Distribuzione geografica
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Continente #
NA - Nord America 5.783
EU - Europa 1.664
AS - Asia 698
AF - Africa 161
SA - Sud America 91
OC - Oceania 18
Continente sconosciuto - Info sul continente non disponibili 5
Totale 8.420
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Nazione #
US - Stati Uniti d'America 5.066
DE - Germania 770
CA - Canada 653
GB - Regno Unito 516
SG - Singapore 304
CN - Cina 120
FI - Finlandia 82
HK - Hong Kong 79
VN - Vietnam 56
PL - Polonia 53
BR - Brasile 46
IT - Italia 38
UA - Ucraina 32
BJ - Benin 24
FR - Francia 17
SE - Svezia 17
RU - Federazione Russa 16
IN - India 11
AT - Austria 10
HU - Ungheria 9
JP - Giappone 9
MA - Marocco 9
AR - Argentina 8
IE - Irlanda 8
NL - Olanda 8
TN - Tunisia 8
AZ - Azerbaigian 7
EC - Ecuador 7
IR - Iran 7
RO - Romania 7
RS - Serbia 7
AU - Australia 6
CO - Colombia 6
LY - Libia 6
PA - Panama 6
RW - Ruanda 6
SK - Slovacchia (Repubblica Slovacca) 6
TR - Turchia 6
TT - Trinidad e Tobago 6
AD - Andorra 5
AO - Angola 5
CU - Cuba 5
DJ - Gibuti 5
EE - Estonia 5
ET - Etiopia 5
GM - Gambi 5
IQ - Iraq 5
KH - Cambogia 5
KZ - Kazakistan 5
LA - Repubblica Popolare Democratica del Laos 5
LC - Santa Lucia 5
MK - Macedonia 5
MU - Mauritius 5
MZ - Mozambico 5
NA - Namibia 5
NG - Nigeria 5
PS - Palestinian Territory 5
SN - Senegal 5
TW - Taiwan 5
BD - Bangladesh 4
BE - Belgio 4
BY - Bielorussia 4
CR - Costa Rica 4
CV - Capo Verde 4
CW - ???statistics.table.value.countryCode.CW??? 4
DK - Danimarca 4
DO - Repubblica Dominicana 4
DZ - Algeria 4
ES - Italia 4
GF - Guiana Francese 4
GR - Grecia 4
ID - Indonesia 4
JM - Giamaica 4
JO - Giordania 4
KG - Kirghizistan 4
KR - Corea 4
LB - Libano 4
MX - Messico 4
PE - Perù 4
PK - Pakistan 4
SA - Arabia Saudita 4
SI - Slovenia 4
SY - Repubblica araba siriana 4
TJ - Tagikistan 4
UY - Uruguay 4
ZA - Sudafrica 4
ZW - Zimbabwe 4
AE - Emirati Arabi Uniti 3
AM - Armenia 3
BB - Barbados 3
BO - Bolivia 3
BS - Bahamas 3
BZ - Belize 3
CH - Svizzera 3
CL - Cile 3
CY - Cipro 3
CZ - Repubblica Ceca 3
GA - Gabon 3
GH - Ghana 3
GP - Guadalupe 3
Totale 8.303
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Città #
Munich 730
Montréal 644
Mcallen 538
Fairfield 226
Woodbridge 188
Jacksonville 158
Singapore 149
Ashburn 131
Houston 131
Ann Arbor 110
Wilmington 90
Seattle 81
Cambridge 79
Chandler 77
Hong Kong 73
Santa Clara 55
Helsinki 54
Bytom 40
Boardman 34
Princeton 31
Beijing 26
Cotonou 24
San Diego 23
Los Angeles 18
Medford 17
Roxbury 17
Dong Ket 15
Des Moines 13
Ho Chi Minh City 13
Nanjing 13
Hebei 9
Guangzhou 8
Baku 7
Hanoi 7
Warsaw 7
Cagliari 6
Council Bluffs 6
Dublin 6
Kigali 6
Mestre 6
New York 6
Panama City 6
Shenyang 6
Tokyo 6
Amsterdam 5
Andorra la Vella 5
Falkenstein 5
Lagos 5
London 5
Luanda 5
Phnom Penh 5
Rio de Janeiro 5
Tunis 5
Vientiane 5
Amman 4
Brooklyn 4
Buffalo 4
Casablanca 4
Castries 4
Changsha 4
Dakar 4
Dushanbe 4
Harare 4
Havana 4
Milan 4
Montevideo 4
Nanchang 4
Nuremberg 4
Port of Spain 4
Praia 4
Rome 4
San José 4
Sydney 4
Tallinn 4
Vienna 4
Willemstad 4
Windhoek 4
Accra 3
Addis Ababa 3
Antananarivo 3
Atlanta 3
Belize City 3
Bishkek 3
Boston 3
Bridgetown 3
Budapest 3
Cayenne 3
Chennai 3
Da Nang 3
Dar es Salaam 3
Djibouti 3
Guatemala City 3
Guayaquil 3
Hargeisa 3
Indiana 3
Kampala 3
Kingston 3
Leawood 3
Libreville 3
Ljubljana 3
Totale 4.101
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Nome #
ESD Sensitivity of 65nm Fully Depleted SOI MOSFETs with Different Strain-Inducing Techniques 1.663
ESD Constraints of Bulk FinFET in Comparison with SOI FinFET Structures 1.427
Next Generation FinFET Devices in Bulk Silicon Technology and Their Benefits for ESD Robustness 1.067
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 770
An Insight into effects Induced by Heavy-Ion Strikes in SCR ESD Protection Structures 708
Electrical-Based ESD Characterization of Ultrathin-Body SOI MOSFETs 276
A Statistical Approach to Microdose Induced Degradation in FinFET Devices 227
Dose Enhancement Due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 220
Angular and Strain Dependence of Heavy-Ions Induced Degradation in SOI FinFETs 211
Microdose and Breakdown Effects Induced by Heavy Ions on sub 32-nm Triple-Gate SOI FETs 206
ESD and Ionizing Radiation Effects on Ultrathin Body SOI and Multiple Gate Technologies 175
Impact of Strain on ESD Robustness of FinFET Devices 162
Microdose and Breakdown Effects Induced by Heavy Ions on sub 20-nm Triple-Gate SOI FETs 160
Impact of radiation on the operation and reliability of deep submicron CMOS 145
Dose Enhancement due to Interconnects in Deep-Submicron MOSFETs Exposed to X-Rays 139
Electrostatic Discharge Effects In Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide and Different Strain-Inducing Techniques 117
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs With Ultra-Thin Gate Oxide 111
Angular and strain dependence of heavy-ions induced degradation in SOI FinFETs2009 European Conference on Radiation and Its Effects on Components and Systems 105
Electrostatic Discharge Effects in Irradiated Fully Depleted SOI MOSFETs with Ultra-Thin Gate Oxide 104
Multi-gate devices for the 32-nm node and beyond: advantages and issues 103
Impact of radiation on the operation and reliability of deep submicron CMOS 97
An Insight into the Parasitic Capacitances of SOI and Bulk FinFET Devices 82
On-Wafer Human Metal Model Measurements for System-Level ESD Analysis on Component Level 79
Ionizing Radiation Effects on Advanced CMOS Devices and on ESD Protection Structures for CMOS Technology 73
Totale 8.427
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Categoria #
all - tutte 15.254
article - articoli 4.560
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 19.814
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021202 0 0 0 0 0 31 11 32 39 24 40 25
2021/2022237 0 31 39 6 7 12 3 21 17 8 42 51
2022/2023211 36 2 2 20 42 42 1 22 28 1 10 5
2023/2024101 11 20 7 11 3 5 2 10 0 5 11 16
2024/20253.422 2.581 264 13 28 93 39 61 78 57 29 95 84
2025/2026958 71 152 218 257 231 29 0 0 0 0 0 0
Totale 8.427