This letter investigates the kinetics of the non-monotonic trapping mechanisms responsible for dynamic on-resistance (R DS,ON) in GaN-on-Si enhancement-mode HEMTs. We describe the time-dependences of electron trapping at carbon on the nitrogen site (CN) acceptors and for the first time we investigate the kinetics of the build-up of positive charge at the buffer/strain-relief layer interface. Part of the analysis is carried out on two-terminal ohmic devices, by a novel setup capable of measuring current transients (from 10 μs to 10 s) after stressing with a negative substrate bias.
Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements
Nardo A.;Meneghini M.;Barbato A.;De Santi C.;Meneghesso G.;Zanoni E.;
2020
Abstract
This letter investigates the kinetics of the non-monotonic trapping mechanisms responsible for dynamic on-resistance (R DS,ON) in GaN-on-Si enhancement-mode HEMTs. We describe the time-dependences of electron trapping at carbon on the nitrogen site (CN) acceptors and for the first time we investigate the kinetics of the build-up of positive charge at the buffer/strain-relief layer interface. Part of the analysis is carried out on two-terminal ohmic devices, by a novel setup capable of measuring current transients (from 10 μs to 10 s) after stressing with a negative substrate bias.
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