BARBATO, ALESSANDRO
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 1.905
AS - Asia 940
EU - Europa 786
AF - Africa 266
SA - Sud America 161
OC - Oceania 26
Continente sconosciuto - Info sul continente non disponibili 13
Totale 4.097
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 1.784
SG - Singapore 353
CN - Cina 174
IT - Italia 153
HK - Hong Kong 124
BR - Brasile 96
DE - Germania 89
PL - Polonia 77
FI - Finlandia 54
AT - Austria 48
BJ - Benin 40
NL - Olanda 40
FR - Francia 34
RU - Federazione Russa 34
GB - Regno Unito 32
SE - Svezia 32
IN - India 30
JP - Giappone 27
TW - Taiwan 27
BE - Belgio 21
KR - Corea 21
CI - Costa d'Avorio 19
VN - Vietnam 18
IE - Irlanda 16
AR - Argentina 15
MX - Messico 14
CA - Canada 13
ES - Italia 13
CH - Svizzera 11
CL - Cile 11
PT - Portogallo 11
BB - Barbados 10
SA - Arabia Saudita 10
AL - Albania 9
AO - Angola 9
CZ - Repubblica Ceca 9
DZ - Algeria 9
EE - Estonia 9
JM - Giamaica 9
MY - Malesia 9
MZ - Mozambico 9
SI - Slovenia 9
SN - Senegal 9
BA - Bosnia-Erzegovina 8
CM - Camerun 8
CV - Capo Verde 8
DO - Repubblica Dominicana 8
GM - Gambi 8
GN - Guinea 8
ID - Indonesia 8
IL - Israele 8
IQ - Iraq 8
KG - Kirghizistan 8
LB - Libano 8
MU - Mauritius 8
VE - Venezuela 8
AM - Armenia 7
BO - Bolivia 7
CO - Colombia 7
EC - Ecuador 7
IR - Iran 7
JO - Giordania 7
MA - Marocco 7
MK - Macedonia 7
NC - Nuova Caledonia 7
NI - Nicaragua 7
PA - Panama 7
UA - Ucraina 7
ZA - Sudafrica 7
BG - Bulgaria 6
BW - Botswana 6
CR - Costa Rica 6
CW - ???statistics.table.value.countryCode.CW??? 6
ET - Etiopia 6
GT - Guatemala 6
HT - Haiti 6
KE - Kenya 6
KH - Cambogia 6
LU - Lussemburgo 6
PK - Pakistan 6
RE - Reunion 6
SD - Sudan 6
SO - Somalia 6
TN - Tunisia 6
AU - Australia 5
CD - Congo 5
EG - Egitto 5
GH - Ghana 5
GR - Grecia 5
HU - Ungheria 5
IS - Islanda 5
LC - Santa Lucia 5
MN - Mongolia 5
MW - Malawi 5
NG - Nigeria 5
PF - Polinesia Francese 5
PH - Filippine 5
RO - Romania 5
TH - Thailandia 5
TR - Turchia 5
Totale 3.906
Salva come PNG Salva come JPEG
Città #
Ashburn 211
Fairfield 202
Singapore 199
Woodbridge 152
Chandler 149
Hong Kong 116
Santa Clara 100
Ann Arbor 86
Seattle 75
Houston 74
Cambridge 70
Beijing 67
Bytom 61
Wilmington 53
Boardman 52
New York 42
Cotonou 39
Medford 34
Munich 34
Princeton 34
Helsinki 31
Des Moines 29
Padova 28
Vienna 25
Los Angeles 23
Roxbury 21
San Diego 19
Abidjan 17
Nanjing 16
Buffalo 13
Dublin 13
Turku 13
Villach 12
Warsaw 12
Hefei 10
Hsinchu 10
São Paulo 10
Amsterdam 9
Bridgetown 9
Council Bluffs 9
Hwaseong-si 9
Luanda 9
Bishkek 8
Chicago 8
Conakry 8
Guangzhou 8
Manchester 8
Seoul 8
Amman 7
Brussels 7
Managua 7
Maputo 7
Noumea 7
Panama City 7
Tallinn 7
Barcelona 6
Basel 6
Cagliari 6
Dakar 6
Dresden 6
Falkenstein 6
Gaborone 6
Kingston 6
Kuala Lumpur 6
London 6
Milan 6
Nanchang 6
Nuremberg 6
Phnom Penh 6
Riyadh 6
Stuttgart 6
Bengaluru 5
Boston 5
Castries 5
Chennai 5
Guatemala City 5
Hanoi 5
Lisbon 5
Ljubljana 5
Nairobi 5
Papeete 5
Pristina 5
Skopje 5
Ulan Bator 5
Washington 5
Willemstad 5
Accra 4
Andorra la Vella 4
Apia 4
Cairo 4
Dallas 4
Dar es Salaam 4
Delft 4
Denver 4
Ferrara 4
Hargeisa 4
Ho Chi Minh City 4
Kampala 4
Khartoum 4
Kigali 4
Totale 2.521
Salva come PNG Salva come JPEG
Nome #
Reliability and dynamic properties of GaN devices 226
Degradation physics of GaN-based lateral and vertical devices 195
Power GaN HEMT degradation: From time-dependent breakdown to hot-electron effects 165
Evidence of mechanical degradation in microelectromechanical switches subjected to long-Term stresses 160
Reliability and failure analysis in power GaN-HEMTs: An overview 158
Reverse bias degradation of metal wrap through silicon solar cells 147
E-REGULUS: development of a 150 W prototype of magnetically enhanced plasma thruster 145
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping 141
Secondary electroluminescence of GaN-on-Si RF HEMTs: Demonstration and physical origin 140
Stress-induced instabilities of shunt paths in high efficiency MWT solar cells 131
Fast System to measure the dynamic onresistance of on-wafer 600 v normally off GaN HEMTs in hard-switching application conditions 131
Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements 130
Potential induced degradation of N-type bifacial silicon solar cells: An investigation based on electrical and optical measurements 130
Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy 126
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions 125
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 123
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects 122
REGULUS: Iodine Fed Plasma Propulsion System for Small Satellites 117
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 116
Potential induced degradation in high-efficiency bifacial solar cells 115
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 111
A case study of a motorised flexible IOD platform: the UNISAT-7 and REGULUS mission 110
A novel high voltage and high speed measurement system for dynamic RON measurements in GaN‐based high mobility transistors (HEMTs) 106
A Novel System to Measure the Dynamic On‑Resistance of On‑Wafer 600 V Normally-Off GaN HEMTs in Real Application Conditions 105
Recent Advancements in Power GaN Reliability 101
Gallium Nitride power devices: challenges and perspectives 98
Role of deep levels and time-dependent breakdown effects in determining performances and reliability of power GaN devices 96
Durability of Bifacial Solar Modules under Potential Induced Degradation: Role of the Encapsulation Materials 95
Novel high-voltage double-pulsed system for GaN-based power HEMTs 91
Challenges towards highly reliable GaN power transistors 91
Reliability physics of GaN HEMTs for power switching applications: role of the gate structure 78
On Wafer Application Testing for 600 V E-mode GaN HEMTs in Boost Regime 78
Study of the stability of GaN-HEMTs with p-type Gate under forward Gate Bias 76
Study of trapping in GaN-based power HEMTs based on High-Voltage Double-Pulsed Backgating Measurement System 66
Totale 4.145
Salva come PNG Salva come JPEG
Categoria #
all - tutte 13.030
article - articoli 3.525
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 16.555
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021227 0 0 0 0 2 8 47 55 39 29 28 19
2021/2022340 10 53 29 33 11 7 6 39 12 11 13 116
2022/2023363 55 14 12 37 86 45 2 27 43 14 14 14
2023/2024306 28 27 45 22 15 70 10 9 6 11 22 41
2024/2025972 10 44 31 50 127 48 35 122 55 32 166 252
2025/20261.312 187 225 354 438 108 0 0 0 0 0 0 0
Totale 4.145