BARBATO, ALESSANDRO
 Distribuzione geografica
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Continente #
NA - Nord America 1.500
EU - Europa 341
AS - Asia 275
OC - Oceania 4
SA - Sud America 4
Continente sconosciuto - Info sul continente non disponibili 2
Totale 2.126
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Nazione #
US - Stati Uniti d'America 1.499
IT - Italia 130
CN - Cina 108
SG - Singapore 91
FI - Finlandia 29
SE - Svezia 28
DE - Germania 24
FR - Francia 24
AT - Austria 23
TW - Taiwan 23
GB - Regno Unito 20
IN - India 16
NL - Olanda 16
KR - Corea 13
IE - Irlanda 11
JP - Giappone 11
BE - Belgio 9
HK - Hong Kong 8
CH - Svizzera 7
RU - Federazione Russa 7
ES - Italia 5
CL - Cile 3
NZ - Nuova Zelanda 3
UA - Ucraina 3
A2 - ???statistics.table.value.countryCode.A2??? 2
MY - Malesia 2
PL - Polonia 2
AU - Australia 1
BR - Brasile 1
CA - Canada 1
HU - Ungheria 1
ID - Indonesia 1
IL - Israele 1
IQ - Iraq 1
RO - Romania 1
SI - Slovenia 1
Totale 2.126
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Città #
Fairfield 202
Woodbridge 152
Chandler 149
Ashburn 124
Santa Clara 99
Ann Arbor 86
Seattle 75
Singapore 75
Houston 73
Cambridge 70
Boardman 52
Wilmington 52
New York 36
Medford 34
Princeton 34
Des Moines 29
Beijing 28
Helsinki 22
Padova 22
Roxbury 21
San Diego 19
Nanjing 16
Villach 12
Dublin 11
Hsinchu 10
Hwaseong-si 9
Vienna 8
Amsterdam 7
Basel 6
Cagliari 6
Dresden 6
Guangzhou 6
Nanchang 6
Barcelona 5
Bengaluru 5
Hefei 5
Manchester 5
Milan 5
Washington 5
Delft 4
Kobe 4
London 4
Patna 4
Ranchi 4
Shenyang 4
Stuttgart 4
Wednesbury 4
Bologna 3
Bury St Edmunds 3
Ferrara 3
Hong Kong 3
Jiaxing 3
Santiago 3
Taoyuan District 3
Trento 3
Auckland 2
Brussels 2
Central 2
Chicago 2
Dallas 2
Fucecchio 2
Genk 2
Jinan 2
Kanpur 2
Kaohsiung 2
Kuala Lumpur 2
Leuven 2
Lille 2
Modling 2
Munich 2
New Taipei City 2
Norwalk 2
Okamoto 2
Reading 2
Roermond 2
Taipei 2
Toulouse 2
Treviso 2
Zhubei 2
Baghdad 1
Borås 1
Budapest 1
Campodarsego 1
Caulonia 1
Changsha 1
Cologne 1
Dongjak-gu 1
Draveil 1
Frankfurt am Main 1
Fuzhou 1
Gothenburg 1
Haifa 1
Hamilton 1
Hangzhou 1
Hebei 1
Herent 1
Ipswich 1
Jakarta 1
Kharkiv 1
Kunming 1
Totale 1.712
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Nome #
Reliability and dynamic properties of GaN devices 139
Degradation physics of GaN-based lateral and vertical devices 124
Power GaN HEMT degradation: From time-dependent breakdown to hot-electron effects 102
Reliability and failure analysis in power GaN-HEMTs: An overview 101
Reverse bias degradation of metal wrap through silicon solar cells 98
Secondary electroluminescence of GaN-on-Si RF HEMTs: Demonstration and physical origin 90
Stress-induced instabilities of shunt paths in high efficiency MWT solar cells 86
Evidence of mechanical degradation in microelectromechanical switches subjected to long-Term stresses 86
Potential induced degradation of N-type bifacial silicon solar cells: An investigation based on electrical and optical measurements 75
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping 74
Potential induced degradation in high-efficiency bifacial solar cells 66
A novel high voltage and high speed measurement system for dynamic RON measurements in GaN‐based high mobility transistors (HEMTs) 66
Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements 66
Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy 65
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects 64
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions 57
E-REGULUS: development of a 150 W prototype of magnetically enhanced plasma thruster 57
Durability of Bifacial Solar Modules under Potential Induced Degradation: Role of the Encapsulation Materials 56
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 56
Fast System to measure the dynamic onresistance of on-wafer 600 v normally off GaN HEMTs in hard-switching application conditions 56
Gallium Nitride power devices: challenges and perspectives 54
REGULUS: Iodine Fed Plasma Propulsion System for Small Satellites 54
Novel high-voltage double-pulsed system for GaN-based power HEMTs 52
Recent Advancements in Power GaN Reliability 49
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 49
Challenges towards highly reliable GaN power transistors 47
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 46
Role of deep levels and time-dependent breakdown effects in determining performances and reliability of power GaN devices 45
A Novel System to Measure the Dynamic On‑Resistance of On‑Wafer 600 V Normally-Off GaN HEMTs in Real Application Conditions 36
On Wafer Application Testing for 600 V E-mode GaN HEMTs in Boost Regime 34
Study of the stability of GaN-HEMTs with p-type Gate under forward Gate Bias 33
Reliability physics of GaN HEMTs for power switching applications: role of the gate structure 32
A case study of a motorised flexible IOD platform: the UNISAT-7 and REGULUS mission 31
Study of trapping in GaN-based power HEMTs based on High-Voltage Double-Pulsed Backgating Measurement System 25
Totale 2.171
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Categoria #
all - tutte 8.357
article - articoli 2.400
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 10.757
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020249 0 0 0 0 0 19 27 46 55 70 20 12
2020/2021300 38 14 14 7 2 8 47 55 39 29 28 19
2021/2022340 10 53 29 33 11 7 6 39 12 11 13 116
2022/2023363 55 14 12 37 86 45 2 27 43 14 14 14
2023/2024306 28 27 45 22 15 70 10 9 6 11 22 41
2024/2025310 10 44 31 50 127 48 0 0 0 0 0 0
Totale 2.171