MASIN, FABRIZIO
 Distribuzione geografica
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Continente #
NA - Nord America 639
EU - Europa 399
AS - Asia 148
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 2
SA - Sud America 1
Totale 1.191
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Nazione #
US - Stati Uniti d'America 638
IE - Irlanda 247
CN - Cina 63
IT - Italia 61
SG - Singapore 43
BE - Belgio 25
GB - Regno Unito 17
DE - Germania 12
KR - Corea 12
IN - India 10
JP - Giappone 10
FI - Finlandia 9
FR - Francia 9
SE - Svezia 6
TW - Taiwan 6
AT - Austria 4
UA - Ucraina 4
HK - Hong Kong 3
A2 - ???statistics.table.value.countryCode.A2??? 2
DK - Danimarca 2
AU - Australia 1
BR - Brasile 1
CA - Canada 1
GR - Grecia 1
IQ - Iraq 1
NZ - Nuova Zelanda 1
PL - Polonia 1
RO - Romania 1
Totale 1.191
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Città #
Dublin 247
Fairfield 91
Chandler 73
Ashburn 60
Cambridge 45
Seattle 40
Woodbridge 40
Singapore 32
Houston 30
New York 26
Ann Arbor 24
Boardman 24
Ghent 21
Santa Clara 21
Wilmington 20
Padova 19
San Diego 16
Beijing 15
Medford 12
Princeton 12
Des Moines 11
Helsinki 9
Guangzhou 7
Hwaseong-si 6
Banpobondong 5
Hsinchu 5
London 5
Cagliari 4
Nanjing 4
Sarcedo 4
Aachen 3
Azzano Decimo 3
Munich 3
Osaka 3
Paddington 3
Roxbury 3
Washington 3
Dallas 2
Derby 2
Dongguan 2
Dortmund 2
Fuzhou 2
Hangzhou 2
Jinan 2
Kilburn 2
Klagenfurt 2
Kolkata 2
Kyoto 2
Legnago 2
Leuven 2
Odense 2
Oostkamp 2
Patna 2
Ranchi 2
Shenyang 2
Toyonaka 2
Yau Tsim Mong 2
Andover 1
Baghdad 1
Bologna 1
Central 1
Coventry 1
Draveil 1
Durham 1
Hamburg 1
Hamilton 1
Ithaca 1
Kanpur 1
Miami Beach 1
Mito 1
Nanchang 1
Nowon-gu 1
Ottawa 1
Piraeus 1
Pune 1
Ravenna 1
Reggello 1
Shanghai 1
Shillong 1
Shinjuku 1
Southwark 1
São Paulo 1
Tainan City 1
Treviso 1
Vienna 1
Villach 1
Warsaw 1
West Lafayette 1
Yokohama 1
Totale 1.021
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Nome #
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 285
Degradation physics of GaN-based lateral and vertical devices 122
Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress 85
Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors 72
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping 72
Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate 71
Study of the oxide trapping phenomena and their impact on the threshold voltage of lateral 4H-SiC MOSFETs 65
OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution 61
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions 55
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 53
Conduction mechanisms in p-Gate AlGaN/GaN high-electron-mobility transistors 51
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 46
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 44
Non-monotonic threshold voltage variation in 4H-SiC metal-oxide-semiconductor field-effect transistor: Investigation and modeling 33
Review on the degradation of GaN-based lateral power transistors 30
Analysis and Modeling of VthShift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature 29
Cryogenic Ultra-Fast Bias Temperature Instability Trap Profiling of SiC MOSFETs 20
Cryogenic-temperature investigation of negative bias stress inducing threshold voltage instabilities on 4H-SiC MOSFETs 16
Totale 1.210
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Categoria #
all - tutte 5.018
article - articoli 2.572
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.590
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020129 0 0 0 0 12 8 13 19 34 28 7 8
2020/2021127 10 8 6 4 3 2 14 40 13 8 13 6
2021/2022156 1 19 23 17 0 0 17 14 0 0 14 51
2022/2023303 19 14 14 7 35 17 30 35 53 13 34 32
2023/2024335 38 46 37 35 36 62 17 17 8 10 17 12
2024/2025117 1 32 13 27 44 0 0 0 0 0 0 0
Totale 1.210