GAO, ZHAN
 Distribuzione geografica
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Continente #
NA - Nord America 1.458
AS - Asia 1.397
EU - Europa 721
AF - Africa 219
SA - Sud America 182
OC - Oceania 16
Continente sconosciuto - Info sul continente non disponibili 9
Totale 4.002
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Nazione #
US - Stati Uniti d'America 1.354
SG - Singapore 432
CN - Cina 265
IT - Italia 205
VN - Vietnam 204
BR - Brasile 108
HK - Hong Kong 99
PL - Polonia 69
IN - India 68
DE - Germania 63
FR - Francia 61
FI - Finlandia 51
BD - Bangladesh 47
BJ - Benin 37
TW - Taiwan 31
GB - Regno Unito 28
NL - Olanda 25
ES - Italia 23
CA - Canada 19
JP - Giappone 19
AT - Austria 18
IQ - Iraq 18
MX - Messico 17
KR - Corea 16
PH - Filippine 16
RU - Federazione Russa 15
AR - Argentina 13
TR - Turchia 13
CH - Svizzera 12
EG - Egitto 12
UZ - Uzbekistan 12
CL - Cile 11
PK - Pakistan 11
BE - Belgio 10
JO - Giordania 10
ZA - Sudafrica 10
AO - Angola 9
DZ - Algeria 9
EC - Ecuador 9
GA - Gabon 9
HN - Honduras 9
IL - Israele 9
KE - Kenya 9
LB - Libano 9
MK - Macedonia 9
SE - Svezia 9
AZ - Azerbaigian 8
CZ - Repubblica Ceca 8
GR - Grecia 8
MA - Marocco 8
NP - Nepal 8
UY - Uruguay 8
ZW - Zimbabwe 8
AE - Emirati Arabi Uniti 7
AL - Albania 7
AU - Australia 7
CV - Capo Verde 7
DO - Repubblica Dominicana 7
ID - Indonesia 7
KZ - Kazakistan 7
LU - Lussemburgo 7
MD - Moldavia 7
PE - Perù 7
PY - Paraguay 7
SK - Slovacchia (Repubblica Slovacca) 7
TJ - Tagikistan 7
UA - Ucraina 7
YE - Yemen 7
CD - Congo 6
CI - Costa d'Avorio 6
CO - Colombia 6
CY - Cipro 6
DK - Danimarca 6
GN - Guinea 6
HU - Ungheria 6
IE - Irlanda 6
KG - Kirghizistan 6
LT - Lituania 6
MY - Malesia 6
PA - Panama 6
PS - Palestinian Territory 6
PT - Portogallo 6
SA - Arabia Saudita 6
BA - Bosnia-Erzegovina 5
BO - Bolivia 5
BZ - Belize 5
CW - ???statistics.table.value.countryCode.CW??? 5
EE - Estonia 5
LA - Repubblica Popolare Democratica del Laos 5
LC - Santa Lucia 5
NG - Nigeria 5
PR - Porto Rico 5
RS - Serbia 5
SY - Repubblica araba siriana 5
TN - Tunisia 5
TZ - Tanzania 5
UG - Uganda 5
ZM - Zambia 5
AM - Armenia 4
BG - Bulgaria 4
Totale 3.846
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Città #
Ashburn 283
San Jose 253
Singapore 253
Santa Clara 110
Hong Kong 86
Padova 78
Ho Chi Minh City 68
Beijing 66
Fairfield 55
Hanoi 47
Chandler 40
Bytom 38
Cotonou 37
Los Angeles 35
Munich 33
Seattle 31
Boardman 27
New York 26
Warsaw 26
Padua 24
Cambridge 21
Helsinki 21
Lauterbourg 21
Houston 20
Woodbridge 20
Turku 18
Buffalo 17
Chicago 17
Hefei 17
Wilmington 17
Chennai 14
Haiphong 14
Orem 13
Tokyo 13
Bengaluru 12
São Paulo 12
Rome 11
Ann Arbor 10
Da Nang 10
Lappeenranta 10
Montreal 10
San Diego 10
Vienna 10
Amman 9
Brooklyn 9
Charlotte 9
Council Bluffs 9
Dallas 9
Denver 9
Libreville 9
London 9
Taipei 9
Tashkent 9
Amsterdam 8
Guangzhou 8
Hsinchu 8
Luanda 8
Medford 8
Montevideo 8
Nairobi 8
Princeton 8
Atlanta 7
Baku 7
Harare 7
Abidjan 6
Baghdad 6
Bishkek 6
Brussels 6
Des Moines 6
Dushanbe 6
Guyancourt 6
Milan 6
Modena 6
Nuremberg 6
Salt Lake City 6
Skopje 6
Sydney 6
Taichung 6
Bắc Ninh 5
Cairo 5
Castries 5
Conakry 5
Delhi 5
Frankfurt am Main 5
Galliate Lombardo 5
Johannesburg 5
Kampala 5
Kinshasa 5
Lausanne 5
Lusaka 5
Madrid 5
Panama City 5
Paris 5
Praia 5
San Pedro Sula 5
Tallinn 5
Willemstad 5
Agordo 4
Antananarivo 4
Belgrade 4
Totale 2.320
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Nome #
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications 273
Role of Carbon in dynamic effects and reliability of 0.15 um AlGaN/GaN HEMTs for RF power amplifiers 217
Thermally-activated failure mechanisms of 0.25 μm RF AlGaN/GaN HEMTs submitted to long-term life tests 204
Self-Induced Photoionization of Traps in Buffer-Free AlGaN/GaN HEMTs 199
Reliability comparison of AlGaN/GaN HEMTs with different carbon doping concentration 192
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 192
Short Term Reliability and Robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs 188
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 186
Hot-electron trapping and electric field redistribution in 0.15 µm RF AlGaN/GaN HEMT with single or double layer AlGaN backbarrier 185
Investigation into trapping modes and threshold instabilities of state-of-art commercial GaN HEMTs 185
Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons 182
Deep level effects and degradation of 0.15 μm RF AlGaN/GaN HEMTs with Mono-layer and Bi-layer AlGaN backbarrier 173
Impact of an AlGaN spike in the buffer in 0.15 μm AlGaN/GaN HEMTs during step stress 167
Review on the degradation of GaN-based lateral power transistors 163
Harmonic generation in metal-insulator and metal-insulator-metal nanostructures 160
Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs 159
Microstructural Degradation Investigations of OFF-State Stressed 0.15 um RF AlGaN/GaN HEMTs: Failure Mode related Breakdown 157
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability 156
Dynamic Behavior of Threshold Voltage and ID–VDS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect 149
Novel approach of combined planar and cross-sectional defect analysis of stressed normally-on HEMT devices with leaky Schottky gates 140
Analysis of trapping and detrapping mechanisms in 0.15 μm-gate AlGaN/GaN High Electron Mobility Transistors: explanation of dynamic behaviour of threshold voltage and on-resistance 134
Transconductance overshoot as a signature of trapping effects at backbarrier interface of GaN HEMTs : dependence on device epitaxial structure 132
Failure Physics and Reliability of GaN-Based HEMTs for Microwave and Millimeter-Wave Applications: A Review of Consolidated Data and Recent Results 130
Totale 4.023
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Categoria #
all - tutte 12.373
article - articoli 6.303
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 18.676
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/202293 0 6 9 17 3 10 1 12 2 6 4 23
2022/2023154 13 4 16 3 29 19 8 13 20 2 10 17
2023/2024232 21 36 21 14 9 29 18 26 10 17 13 18
2024/2025728 3 48 24 39 92 53 23 64 40 16 121 205
2025/20262.644 198 157 314 360 270 126 383 219 246 152 151 68
2026/20276 6 0 0 0 0 0 0 0 0 0 0 0
Totale 4.023