DING, LILI

DING, LILI  

Dipartimento di Ingegneria dell'Informazione - DEI  

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Risultati 1 - 12 di 12 (tempo di esecuzione: 0.033 secondi).
Titolo Data di pubblicazione Autori Rivista Serie Titolo libro
RD53 pixel chips for the ATLAS and CMS Phase-2 upgrades at HL-LHC 2024 Bonaldo, S.Ding, L.Gerardin, S.Mattiazzo, S.Paccagnella, A.Vogrig, D. + NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT - -
Comparison of radiation degradation induced by x-ray and 3-MeV protons in 65-nm CMOS transistors 2016 DING, LILIGERARDIN, SIMONEBAGATIN, MARTABISELLO, DARIOMATTIAZZO, SERENAPACCAGNELLA, ALESSANDRO CHINESE PHYSICS B - -
Impact of bias conditions on electrical stress and ionizing radiation effects in Si-based TFETs 2016 DING, LILIGERARDIN, SIMONEBAGATIN, MARTAPACCAGNELLA, ALESSANDRO + SOLID-STATE ELECTRONICS - -
Radiation tolerance study of a commercial 65nm CMOS technology for high energy physics applications 2016 DING, LILIGERARDIN, SIMONEBAGATIN, MARTABISELLO, DARIOMATTIAZZO, SERENAPACCAGNELLA, ALESSANDRO NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT - -
Recent progress of RD53 Collaboration towards next generation Pixel Read-Out Chip for HL-LHC 2016 BAGATIN, MARTABISELLO, DARIOMATTIAZZO, SERENADING, LILIGERARDIN, SIMONEGIUBILATO, PIERONEVIANI, ANDREAPACCAGNELLA, ALESSANDROVOGRIG, DANIELEWYSS, JEFFERY + JOURNAL OF INSTRUMENTATION - -
CHIPIX65: Developments on a new generation pixel readout ASIC in CMOS 65 nm for HEP experiments 2015 BAGATIN, MARTABISELLO, DARIOGERARDIN, SIMONEMATTIAZZO, SERENADING, LILIGIUBILATO, PIEROPACCAGNELLA, ALESSANDRO + - - Proceedings - 2015 6th IEEE International Workshop on Advances in Sensors and Interfaces, IWASI 2015
Drain Current Collapse in 65 nm pMOS Transistors After Exposure to Grad Dose 2015 DING, LILIGERARDIN, SIMONEBAGATIN, MARTAMATTIAZZO, SERENABISELLO, DARIOPACCAGNELLA, ALESSANDRO IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Enhancement of Transistor-to-Transistor Variability Due to Total Dose Effects in 65-nm MOSFETs 2015 GERARDIN, SIMONEBAGATIN, MARTADING, LILIMATTIAZZO, SERENAPACCAGNELLA, ALESSANDRO + IEEE TRANSACTIONS ON NUCLEAR SCIENCE - -
Investigation of hot carrier stress and constant voltage stress in high-k Si-based TFETs 2015 DING, LILIGERARDIN, SIMONEBAGATIN, MARTAPACCAGNELLA, ALESSANDRO + IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY - -
Investigation of total ionizing dose effect and displacement damage in 65nm CMOS transistors exposed to 3MeV protons 2015 DING, LILIGERARDIN, SIMONEBAGATIN, MARTABISELLO, DARIOMATTIAZZO, SERENAPACCAGNELLA, ALESSANDRO NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT - -
Radiation vulnerability in 65 nm CMOS I/O transistors after exposure to grad dose 2015 DING, LILIGERARDIN, SIMONEBAGATIN, MARTAMATTIAZZO, SERENABISELLO, DARIOPACCAGNELLA, ALESSANDRO - - Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS
65 nm technology for HEP: Status and perspective 2014 BAGATIN, MARTABISELLO, DARIOMATTIAZZO, SERENADING, LILIGERARDIN, SIMONEGIUBILATO, PIERONEVIANI, ANDREAPACCAGNELLA, ALESSANDROVOGRIG, DANIELE + POS PROCEEDINGS OF SCIENCE - Proceedings of Science