FAVERO, DAVIDE
 Distribuzione geografica
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Continente #
EU - Europa 622
AS - Asia 415
NA - Nord America 277
SA - Sud America 101
AF - Africa 77
OC - Oceania 8
Continente sconosciuto - Info sul continente non disponibili 5
Totale 1.505
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Nazione #
US - Stati Uniti d'America 224
IE - Irlanda 218
IT - Italia 176
SG - Singapore 138
CN - Cina 71
BR - Brasile 68
HK - Hong Kong 59
DE - Germania 47
PL - Polonia 38
KR - Corea 29
NL - Olanda 18
GB - Regno Unito 17
VN - Vietnam 15
IN - India 14
AT - Austria 13
FR - Francia 12
BE - Belgio 11
FI - Finlandia 11
JP - Giappone 10
MX - Messico 10
TW - Taiwan 9
DZ - Algeria 8
AR - Argentina 7
PY - Paraguay 7
CY - Cipro 6
ID - Indonesia 6
RU - Federazione Russa 6
BW - Botswana 5
BY - Bielorussia 5
DO - Repubblica Dominicana 5
EG - Egitto 5
KG - Kirghizistan 5
PR - Porto Rico 5
AO - Angola 4
GA - Gabon 4
GH - Ghana 4
PE - Perù 4
SA - Arabia Saudita 4
TH - Thailandia 4
UY - Uruguay 4
XK - ???statistics.table.value.countryCode.XK??? 4
AE - Emirati Arabi Uniti 3
AL - Albania 3
AU - Australia 3
BB - Barbados 3
BD - Bangladesh 3
BS - Bahamas 3
BZ - Belize 3
CH - Svizzera 3
CI - Costa d'Avorio 3
EC - Ecuador 3
EE - Estonia 3
GM - Gambi 3
IR - Iran 3
JM - Giamaica 3
KE - Kenya 3
LV - Lettonia 3
MA - Marocco 3
ME - Montenegro 3
MK - Macedonia 3
MY - Malesia 3
NP - Nepal 3
PA - Panama 3
PS - Palestinian Territory 3
SE - Svezia 3
TR - Turchia 3
YE - Yemen 3
ZA - Sudafrica 3
AF - Afghanistan, Repubblica islamica di 2
BG - Bulgaria 2
CA - Canada 2
CU - Cuba 2
CV - Capo Verde 2
DK - Danimarca 2
DM - Dominica 2
ET - Etiopia 2
GF - Guiana Francese 2
GT - Guatemala 2
HR - Croazia 2
HT - Haiti 2
HU - Ungheria 2
IL - Israele 2
IQ - Iraq 2
LC - Santa Lucia 2
LU - Lussemburgo 2
MD - Moldavia 2
NA - Namibia 2
NC - Nuova Caledonia 2
NE - Niger 2
NG - Nigeria 2
NI - Nicaragua 2
NZ - Nuova Zelanda 2
RO - Romania 2
SK - Slovacchia (Repubblica Slovacca) 2
SN - Senegal 2
TJ - Tagikistan 2
UA - Ucraina 2
UG - Uganda 2
VE - Venezuela 2
ZM - Zambia 2
Totale 1.455
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Città #
Dublin 215
Singapore 83
Hong Kong 57
Santa Clara 48
Padova 45
Ashburn 42
Bytom 34
Munich 22
Milan 21
Padua 21
Beijing 16
Boardman 15
Los Angeles 12
Hefei 11
Riese Pio X 11
Dongjak-gu 8
Ho Chi Minh City 8
São Paulo 8
Vienna 8
Bologna 7
Catania 7
London 7
Nuremberg 7
Shanghai 7
Buffalo 6
Hwaseong-si 6
Seoul 6
Bengaluru 5
Bishkek 5
Guangzhou 5
Lappeenranta 5
Leuven 5
Rome 5
Accra 4
Atlanta 4
Formigine 4
Frankfurt am Main 4
Libreville 4
Limassol 4
Mexico City 4
Minsk 4
Modena 4
Parma 4
Pristina 4
Sarcedo 4
Tokyo 4
Abidjan 3
Bagneux 3
Banjul 3
Bridgetown 3
Campinas 3
Casablanca 3
Chandler 3
Gaborone 3
Luanda 3
Montevideo 3
Nairobi 3
Nassau 3
New York 3
Podgorica 3
Prineville 3
Riga 3
Santo Domingo 3
Selvazzano Dentro 3
Taichung 3
Turku 3
Warsaw 3
Al Mansurah 2
Algiers 2
Amsterdam 2
Apex 2
Arzignano 2
Bangkok 2
Belize City 2
Betim 2
Blacksburg 2
Brasília 2
Brooklyn 2
Brussels 2
Cairo 2
Cape Town 2
Castries 2
Chennai 2
Chiswick 2
Ciudad del Este 2
Clonakilty 2
Council Bluffs 2
Dakar 2
Dallas 2
Dalmine 2
Dongguan 2
Dubai 2
Dushanbe 2
Fort Liberté 2
Foshan 2
Genoa 2
Grigny 2
Guatemala City 2
Halfweg 2
Harare 2
Totale 949
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Nome #
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs 286
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives 145
A Review of SiC Commercial Devices for Automotive: Properties and Challenges 112
GaN Vertical Devices: challenges for high performance and stability 99
High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps 85
GaN-on-Si Power HEMTs for Automotive: Current Status and Perspectives 84
OFF-state breakdown and threshold voltage stability of vertical GaN-on-Si trench MOSFETs 80
Review on the degradation of GaN-based lateral power transistors 72
Impact of drain-source leakage on the dynamic Ron of power HEMTs with p-GaN gate 69
RON and VTH Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout 65
Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs 64
Vth stability and gate leakage current trade-off in p-GaN gate power HEMTs during on- and off-state stress 63
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD 60
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors 50
Dynamic phenomena in 650V p-GaN technology 49
Vertical GaN Devices: Reliability Challenges and Lessons Learned from Si and SiC 40
Trade-off between gate leakage current and threshold voltage stability in power HEMTs during ON-state and OFF-state stress 38
Recovery of drain-induced threshold voltage shift by positive gate bias in GaN power HEMTs with p-GaN gate 36
Characterization, Modeling and Reliability of Lateral and Vertical GaN-based Power Devices 30
Vth and Ron Instability of GaN Power HEMTs with pGaN Gate Under Negative Gate Bias 12
Totale 1.539
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Categoria #
all - tutte 4.796
article - articoli 2.212
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.008
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2022/202389 0 0 4 1 0 2 2 1 12 8 29 30
2023/2024281 30 39 50 38 30 25 18 8 18 3 10 12
2024/2025611 6 25 36 34 62 61 28 51 32 29 109 138
2025/2026558 168 162 228 0 0 0 0 0 0 0 0 0
Totale 1.539