FAVERO, DAVIDE
 Distribuzione geografica
Continente #
EU - Europa 330
NA - Nord America 111
AS - Asia 96
Totale 537
Nazione #
IE - Irlanda 213
US - Stati Uniti d'America 111
IT - Italia 68
CN - Cina 36
SG - Singapore 31
DE - Germania 11
FR - Francia 11
KR - Corea 11
GB - Regno Unito 10
BE - Belgio 7
IN - India 6
TW - Taiwan 6
FI - Finlandia 3
JP - Giappone 3
BY - Bielorussia 2
DK - Danimarca 2
NL - Olanda 2
TH - Thailandia 2
HK - Hong Kong 1
SI - Slovenia 1
Totale 537
Città #
Dublin 213
Santa Clara 46
Padova 27
Singapore 25
Boardman 15
Beijing 8
Dongjak-gu 8
Ashburn 7
London 6
Bengaluru 5
Guangzhou 5
Milan 5
Leuven 4
Modena 4
Parma 4
Sarcedo 4
Atlanta 3
Bagneux 3
Chandler 3
Prineville 3
Shanghai 3
Arzignano 2
Bangkok 2
Blacksburg 2
Bologna 2
Chiswick 2
Dongguan 2
Foshan 2
Frankfurt am Main 2
Genoa 2
Grigny 2
Halfweg 2
Hsinchu 2
Lappeenranta 2
Minsk 2
Munich 2
Naples 2
New Taipei 2
Odense 2
Scorzè 2
Taichung 2
Tokyo 2
Treviso 2
Azzano Decimo 1
Council Bluffs 1
Dallas 1
Fort Worth 1
Helsinki 1
Herent 1
Hong Kong 1
Hwaseong-si 1
Ilford 1
Limbiate 1
Montecchio Maggiore 1
Nuremberg 1
Perugia 1
Pico Rivera 1
Ravenna 1
Springfield 1
Stuttgart 1
Toyonaka 1
Washington 1
Škofljica 1
Totale 465
Nome #
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs 249
A Review of SiC Commercial Devices for Automotive: Properties and Challenges 56
GaN Vertical Devices: challenges for high performance and stability 51
Review on the degradation of GaN-based lateral power transistors 35
GaN-on-Si Power HEMTs for Automotive: Current Status and Perspectives 34
High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps 25
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives 21
Vth stability and gate leakage current trade-off in p-GaN gate power HEMTs during on- and off-state stress 20
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors 16
Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs 12
RON and VTH Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout 10
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD 10
Trade-off between gate leakage current and threshold voltage stability in power HEMTs during ON-state and OFF-state stress 7
Recovery of drain-induced threshold voltage shift by positive gate bias in GaN power HEMTs with p-GaN gate 4
Totale 550
Categoria #
all - tutte 2.232
article - articoli 863
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.095


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2022/202389 0 0 4 1 0 2 2 1 12 8 29 30
2023/2024281 30 39 50 38 30 25 18 8 18 3 10 12
2024/2025180 6 25 36 34 62 17 0 0 0 0 0 0
Totale 550