FAVERO, DAVIDE
 Distribuzione geografica
Continente #
EU - Europa 406
AS - Asia 150
NA - Nord America 125
SA - Sud America 3
Totale 684
Nazione #
IE - Irlanda 213
US - Stati Uniti d'America 124
IT - Italia 113
SG - Singapore 72
CN - Cina 36
DE - Germania 23
KR - Corea 18
FR - Francia 11
GB - Regno Unito 11
BE - Belgio 8
TW - Taiwan 8
NL - Olanda 7
AT - Austria 6
IN - India 6
RU - Federazione Russa 5
HK - Hong Kong 4
FI - Finlandia 3
JP - Giappone 3
BR - Brasile 2
BY - Bielorussia 2
DK - Danimarca 2
TH - Thailandia 2
BD - Bangladesh 1
CA - Canada 1
LT - Lituania 1
SI - Slovenia 1
VE - Venezuela 1
Totale 684
Città #
Dublin 213
Santa Clara 46
Padova 36
Singapore 36
Boardman 15
Riese Pio X 11
Ashburn 8
Beijing 8
Dongjak-gu 8
London 7
Milan 7
Hwaseong-si 6
Bengaluru 5
Bologna 5
Guangzhou 5
Leuven 5
Nuremberg 5
Formigine 4
Frankfurt am Main 4
Hong Kong 4
Modena 4
Parma 4
Sarcedo 4
Vienna 4
Atlanta 3
Bagneux 3
Chandler 3
Prineville 3
Rome 3
Selvazzano Dentro 3
Shanghai 3
Apex 2
Arzignano 2
Bangkok 2
Blacksburg 2
Chiswick 2
Council Bluffs 2
Dalmine 2
Dongguan 2
Foshan 2
Genoa 2
Grigny 2
Halfweg 2
Hsinchu 2
Lappeenranta 2
Minsk 2
Munich 2
Naples 2
New Taipei 2
Odense 2
Scorzè 2
Taichung 2
Tokyo 2
Treviso 2
Araraquara 1
Azzano Decimo 1
Belo Horizonte 1
Caracas 1
Catania 1
Conversano 1
Dallas 1
Fort Worth 1
Helsinki 1
Herent 1
Ilford 1
Kālāi 1
Limbiate 1
Montecchio Maggiore 1
Perugia 1
Pico Rivera 1
Ravenna 1
Springfield 1
Stuttgart 1
Toronto 1
Toyonaka 1
Washington 1
Škofljica 1
Totale 544
Nome #
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs 255
A Review of SiC Commercial Devices for Automotive: Properties and Challenges 70
GaN Vertical Devices: challenges for high performance and stability 56
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives 46
High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps 44
GaN-on-Si Power HEMTs for Automotive: Current Status and Perspectives 41
Review on the degradation of GaN-based lateral power transistors 39
Vth stability and gate leakage current trade-off in p-GaN gate power HEMTs during on- and off-state stress 33
Dynamic phenomena in 650V p-GaN technology 23
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD 22
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors 20
RON and VTH Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout 18
Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs 18
Trade-off between gate leakage current and threshold voltage stability in power HEMTs during ON-state and OFF-state stress 11
Recovery of drain-induced threshold voltage shift by positive gate bias in GaN power HEMTs with p-GaN gate 10
Totale 706
Categoria #
all - tutte 3.043
article - articoli 1.280
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.323


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2022/202389 0 0 4 1 0 2 2 1 12 8 29 30
2023/2024281 30 39 50 38 30 25 18 8 18 3 10 12
2024/2025336 6 25 36 34 62 61 28 51 32 1 0 0
Totale 706