FAVERO, DAVIDE
 Distribuzione geografica
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Continente #
NA - Nord America 1.436
AS - Asia 1.325
EU - Europa 938
SA - Sud America 181
AF - Africa 168
Continente sconosciuto - Info sul continente non disponibili 40
OC - Oceania 14
Totale 4.102
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Nazione #
US - Stati Uniti d'America 1.298
SG - Singapore 320
IT - Italia 289
CN - Cina 256
IE - Irlanda 220
VN - Vietnam 180
HK - Hong Kong 134
BD - Bangladesh 127
BR - Brasile 106
DE - Germania 85
IN - India 52
PL - Polonia 45
FR - Francia 44
GB - Regno Unito 34
KR - Corea 32
CA - Canada 29
NL - Olanda 29
JP - Giappone 26
AR - Argentina 22
FI - Finlandia 22
ZA - Sudafrica 21
MX - Messico 19
TW - Taiwan 18
AT - Austria 16
ES - Italia 16
SA - Arabia Saudita 16
ID - Indonesia 15
RU - Federazione Russa 13
BE - Belgio 12
PH - Filippine 12
DZ - Algeria 11
PR - Porto Rico 11
TR - Turchia 11
EC - Ecuador 10
EG - Egitto 10
AE - Emirati Arabi Uniti 9
AL - Albania 9
CH - Svizzera 9
CR - Costa Rica 9
PY - Paraguay 9
SE - Svezia 9
TH - Thailandia 9
BJ - Benin 7
CO - Colombia 7
CY - Cipro 7
GT - Guatemala 7
IQ - Iraq 7
JO - Giordania 7
KG - Kirghizistan 7
MY - Malesia 7
BS - Bahamas 6
BW - Botswana 6
BZ - Belize 6
CI - Costa d'Avorio 6
DK - Danimarca 6
DO - Repubblica Dominicana 6
ET - Etiopia 6
GM - Gambi 6
JM - Giamaica 6
MA - Marocco 6
NP - Nepal 6
RO - Romania 6
UY - Uruguay 6
YE - Yemen 6
ZM - Zambia 6
AM - Armenia 5
AU - Australia 5
BB - Barbados 5
BY - Bielorussia 5
CU - Cuba 5
HN - Honduras 5
HU - Ungheria 5
IL - Israele 5
IR - Iran 5
KE - Kenya 5
LT - Lituania 5
ME - Montenegro 5
MK - Macedonia 5
PE - Perù 5
PK - Pakistan 5
UA - Ucraina 5
UZ - Uzbekistan 5
XK - ???statistics.table.value.countryCode.XK??? 5
AO - Angola 4
AZ - Azerbaigian 4
CL - Cile 4
CV - Capo Verde 4
EE - Estonia 4
GA - Gabon 4
GF - Guiana Francese 4
GH - Ghana 4
IS - Islanda 4
LC - Santa Lucia 4
LV - Lettonia 4
MD - Moldavia 4
MW - Malawi 4
NI - Nicaragua 4
PA - Panama 4
PS - Palestinian Territory 4
SI - Slovenia 4
Totale 3.928
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Città #
Dublin 215
San Jose 204
Singapore 169
Ashburn 125
Hong Kong 113
Santa Clara 89
Ho Chi Minh City 59
Los Angeles 50
Hanoi 45
Padova 45
Council Bluffs 41
Beijing 34
Bytom 34
New York 34
Milan 33
Padua 32
Frankfurt am Main 30
Munich 28
Orem 22
Atlanta 20
Dallas 20
Buffalo 19
Rome 17
Boardman 16
Lauterbourg 15
Chicago 14
Guangzhou 14
Tokyo 14
Hefei 13
São Paulo 13
Johannesburg 12
Brooklyn 11
London 11
Riese Pio X 11
Shanghai 11
Denver 10
Jeddah 10
Vienna 10
Warsaw 10
Amsterdam 9
Bengaluru 9
Catania 9
Da Nang 9
Houston 9
Toronto 9
Turku 9
Bologna 8
Chennai 8
Dongjak-gu 8
Haiphong 8
Naples 8
Nuremberg 8
San Francisco 8
Montreal 7
Stockholm 7
Abidjan 6
Amman 6
Bangkok 6
Bishkek 6
Biên Hòa 6
Cotonou 6
Hwaseong-si 6
Lappeenranta 6
Lusaka 6
Mexico City 6
Modena 6
Nassau 6
Quito 6
San José 6
Seoul 6
Taipei 6
Banjul 5
Bari 5
Cairo 5
Cape Town 5
Casablanca 5
Guatemala City 5
Havana 5
Kingston 5
Leuven 5
Limassol 5
Montevideo 5
Nairobi 5
New Delhi 5
Pristina 5
Sanaa 5
Tashkent 5
Yerevan 5
Accra 4
Addis Ababa 4
Baghdad 4
Baku 4
Boston 4
Bridgetown 4
Bắc Ninh 4
Campinas 4
Castries 4
Chongqing 4
Findlay 4
Formigine 4
Totale 2.035
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Nome #
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives 803
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs 369
OFF-state breakdown and threshold voltage stability of vertical GaN-on-Si trench MOSFETs 221
Impact of drain-source leakage on the dynamic Ron of power HEMTs with p-GaN gate 214
High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps 186
A Review of SiC Commercial Devices for Automotive: Properties and Challenges 184
RON and VTH Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout 181
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD 172
Review on the degradation of GaN-based lateral power transistors 168
GaN-on-Si Power HEMTs for Automotive: Current Status and Perspectives 167
GaN Vertical Devices: challenges for high performance and stability 167
Vertical GaN Devices: Reliability Challenges and Lessons Learned from Si and SiC 164
Trade-off between gate leakage current and threshold voltage stability in power HEMTs during ON-state and OFF-state stress 164
Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs 160
Vth and Ron Instability of GaN Power HEMTs with pGaN Gate Under Negative Gate Bias 155
Vth stability and gate leakage current trade-off in p-GaN gate power HEMTs during on- and off-state stress 134
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors 130
Dynamic phenomena in 650V p-GaN technology 129
Characterization, Modeling and Reliability of Lateral and Vertical GaN-based Power Devices 126
Recovery of drain-induced threshold voltage shift by positive gate bias in GaN power HEMTs with p-GaN gate 108
Totale 4.102
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Categoria #
all - tutte 9.746
article - articoli 5.180
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 14.926
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2022/202389 0 0 4 1 0 2 2 1 12 8 29 30
2023/2024281 30 39 50 38 30 25 18 8 18 3 10 12
2024/2025611 6 25 36 34 62 61 28 51 32 29 109 138
2025/20262.480 168 162 316 325 192 147 365 166 215 93 177 154
2026/2027641 477 132 32 0 0 0 0 0 0 0 0 0
Totale 4.102