FAVERO, DAVIDE
 Distribuzione geografica
Continente #
EU - Europa 317
AS - Asia 86
NA - Nord America 51
Totale 454
Nazione #
IE - Irlanda 213
IT - Italia 58
US - Stati Uniti d'America 51
CN - Cina 36
SG - Singapore 26
DE - Germania 11
FR - Francia 10
GB - Regno Unito 9
KR - Corea 9
BE - Belgio 6
TW - Taiwan 6
FI - Finlandia 3
IN - India 3
JP - Giappone 3
BY - Bielorussia 2
DK - Danimarca 2
NL - Olanda 2
TH - Thailandia 2
HK - Hong Kong 1
SI - Slovenia 1
Totale 454
Città #
Dublin 213
Padova 22
Singapore 20
Beijing 8
Dongjak-gu 8
Ashburn 6
London 6
Guangzhou 5
Santa Clara 5
Leuven 4
Modena 4
Parma 4
Sarcedo 4
Bagneux 3
Chandler 3
Milan 3
Prineville 3
Shanghai 3
Arzignano 2
Bangkok 2
Bengaluru 2
Blacksburg 2
Chiswick 2
Dongguan 2
Foshan 2
Frankfurt am Main 2
Genoa 2
Grigny 2
Halfweg 2
Hsinchu 2
Lappeenranta 2
Minsk 2
Munich 2
Naples 2
New Taipei 2
Odense 2
Scorzè 2
Taichung 2
Tokyo 2
Treviso 2
Azzano Decimo 1
Boardman 1
Dallas 1
Fort Worth 1
Helsinki 1
Herent 1
Hong Kong 1
Hwaseong-si 1
Limbiate 1
Montecchio Maggiore 1
Nuremberg 1
Perugia 1
Pico Rivera 1
Ravenna 1
Springfield 1
Stuttgart 1
Toyonaka 1
Washington 1
Škofljica 1
Totale 387
Nome #
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs 243
A Review of SiC Commercial Devices for Automotive: Properties and Challenges 47
GaN Vertical Devices: challenges for high performance and stability 39
GaN-on-Si Power HEMTs for Automotive: Current Status and Perspectives 30
Review on the degradation of GaN-based lateral power transistors 28
High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps 21
Vth stability and gate leakage current trade-off in p-GaN gate power HEMTs during on- and off-state stress 14
Impact of doping and geometry on breakdown voltage of semi-vertical GaN-on-Si MOS capacitors 12
Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives 11
RON and VTH Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout 6
Experimental and Numerical Analysis of OFFState Bias Induced Instabilities in Vertical GaNon-Si Trench MOSFETs 6
Physical insights into trapping effects on vertical GaN-on-Si trench MOSFETs from TCAD 6
Trade-off between gate leakage current and threshold voltage stability in power HEMTs during ON-state and OFF-state stress 3
Totale 466
Categoria #
all - tutte 1.881
article - articoli 693
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.574


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2022/202389 0 0 4 1 0 2 2 1 12 8 29 30
2023/2024281 30 39 50 38 30 25 18 8 18 3 10 12
2024/202596 6 25 36 29 0 0 0 0 0 0 0 0
Totale 466