CANATO, ELEONORA
 Distribuzione geografica
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Continente #
NA - Nord America 1.260
EU - Europa 569
AS - Asia 101
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 2
Totale 1.934
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Nazione #
US - Stati Uniti d'America 1.260
IE - Irlanda 405
IT - Italia 78
CN - Cina 56
UA - Ucraina 18
SG - Singapore 17
SE - Svezia 14
GB - Regno Unito 12
FI - Finlandia 11
IN - India 11
DE - Germania 10
KR - Corea 9
CH - Svizzera 7
FR - Francia 7
GR - Grecia 5
A2 - ???statistics.table.value.countryCode.A2??? 2
HK - Hong Kong 2
MY - Malesia 2
AU - Australia 1
IL - Israele 1
IQ - Iraq 1
JP - Giappone 1
NZ - Nuova Zelanda 1
PL - Polonia 1
RO - Romania 1
TW - Taiwan 1
Totale 1.934
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Città #
Dublin 405
Fairfield 235
Houston 155
Chandler 115
Woodbridge 115
Ashburn 111
Cambridge 87
Seattle 74
Wilmington 68
Ann Arbor 59
San Diego 27
Medford 22
Princeton 22
Beijing 20
New York 20
Boardman 15
Des Moines 14
Singapore 14
Helsinki 10
Hwaseong-si 9
Nanjing 8
Basel 6
Falls Church 6
Padova 6
Roxbury 5
Shenyang 5
London 4
Patna 4
Ranchi 4
Hebei 3
Jinan 3
Norwalk 3
Central 2
Dortmund 2
Fuzhou 2
Guangzhou 2
Hangzhou 2
Hefei 2
Kanpur 2
Kharkiv 2
Kilburn 2
Kuala Lumpur 2
Milan 2
Nanchang 2
Washington 2
Andover 1
Athens 1
Baghdad 1
Bristol 1
Böblingen 1
Changsha 1
Denver 1
Draveil 1
Esslingen am Neckar 1
Haifa 1
Hamilton 1
Hounslow 1
Hsinchu 1
Jiaxing 1
Liestal 1
Miami Beach 1
Milton Keynes 1
Munich 1
New Bedfont 1
Ningbo 1
Nuremberg 1
Pune 1
Rapino 1
Rockville 1
Shaoxing 1
Southwark 1
Tappahannock 1
Treviso 1
Warsaw 1
Xian 1
Zhengzhou 1
Totale 1.711
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Nome #
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs 511
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 138
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs 126
Degradation physics of GaN-based lateral and vertical devices 111
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment 94
GaN HEMTs with p-GaN gate: Field-And time-dependent degradation 93
Reliability and failure analysis in power GaN-HEMTs: An overview 92
Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress 81
Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs 71
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors 70
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level 69
Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate 67
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping 67
OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution 52
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 50
Gallium Nitride power devices: challenges and perspectives 47
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions 46
Recent Advancements in Power GaN Reliability 42
Challenges towards highly reliable GaN power transistors 40
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 40
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 28
GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal 26
Totale 1.961
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Categoria #
all - tutte 6.043
article - articoli 2.693
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 8.736
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020346 25 11 7 13 24 15 23 37 70 76 27 18
2020/2021329 14 22 9 11 4 5 32 131 29 17 32 23
2021/2022406 6 55 44 18 6 7 26 29 20 36 60 99
2022/2023475 65 51 50 54 46 21 38 38 33 8 33 38
2023/2024287 37 45 42 33 33 60 4 4 2 2 10 15
Totale 1.961