CANATO, ELEONORA
 Distribuzione geografica
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Continente #
NA - Nord America 1.593
EU - Europa 856
AS - Asia 485
AF - Africa 114
SA - Sud America 108
OC - Oceania 12
Continente sconosciuto - Info sul continente non disponibili 9
Totale 3.177
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Nazione #
US - Stati Uniti d'America 1.542
IE - Irlanda 408
SG - Singapore 172
IT - Italia 116
CN - Cina 97
BR - Brasile 81
DE - Germania 63
HK - Hong Kong 63
PL - Polonia 46
FI - Finlandia 27
VN - Vietnam 27
GB - Regno Unito 22
FR - Francia 19
SE - Svezia 19
UA - Ucraina 19
IN - India 17
NL - Olanda 17
KR - Corea 15
CI - Costa d'Avorio 12
RU - Federazione Russa 12
AT - Austria 11
AR - Argentina 10
CH - Svizzera 10
GR - Grecia 7
BF - Burkina Faso 6
CZ - Repubblica Ceca 6
EE - Estonia 6
KG - Kirghizistan 6
MR - Mauritania 6
MY - Malesia 6
PH - Filippine 6
AO - Angola 5
AU - Australia 5
CA - Canada 5
CY - Cipro 5
GN - Guinea 5
GP - Guadalupe 5
JP - Giappone 5
MG - Madagascar 5
MW - Malawi 5
PK - Pakistan 5
PT - Portogallo 5
UZ - Uzbekistan 5
ZA - Sudafrica 5
BB - Barbados 4
CL - Cile 4
CW - ???statistics.table.value.countryCode.CW??? 4
DO - Repubblica Dominicana 4
ES - Italia 4
GH - Ghana 4
ID - Indonesia 4
IQ - Iraq 4
IR - Iran 4
JM - Giamaica 4
LU - Lussemburgo 4
NP - Nepal 4
SA - Arabia Saudita 4
SD - Sudan 4
SN - Senegal 4
TR - Turchia 4
BG - Bulgaria 3
BO - Bolivia 3
BW - Botswana 3
BY - Bielorussia 3
CD - Congo 3
CG - Congo 3
CO - Colombia 3
CR - Costa Rica 3
CU - Cuba 3
CV - Capo Verde 3
DZ - Algeria 3
ET - Etiopia 3
GT - Guatemala 3
IL - Israele 3
LC - Santa Lucia 3
LV - Lettonia 3
MA - Marocco 3
ML - Mali 3
MX - Messico 3
NI - Nicaragua 3
RO - Romania 3
TH - Thailandia 3
TJ - Tagikistan 3
TW - Taiwan 3
UG - Uganda 3
XK - ???statistics.table.value.countryCode.XK??? 3
YE - Yemen 3
YT - Mayotte 3
A2 - ???statistics.table.value.countryCode.A2??? 2
AZ - Azerbaigian 2
BA - Bosnia-Erzegovina 2
BE - Belgio 2
BS - Bahamas 2
DK - Danimarca 2
DM - Dominica 2
EC - Ecuador 2
EG - Egitto 2
GM - Gambi 2
HU - Ungheria 2
IS - Islanda 2
Totale 3.111
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Città #
Dublin 408
Fairfield 235
Ashburn 197
Houston 155
Chandler 115
Woodbridge 115
Singapore 114
Cambridge 87
Seattle 76
Santa Clara 72
Wilmington 68
Hong Kong 61
Ann Arbor 59
Bytom 43
Boardman 37
Munich 31
Beijing 30
San Diego 27
New York 24
Medford 22
Princeton 22
Padova 19
Des Moines 14
Helsinki 14
Abidjan 12
Padua 12
Buffalo 10
Hwaseong-si 9
Turku 9
Hefei 8
Ho Chi Minh City 8
London 8
Nanjing 8
Falkenstein 7
São Paulo 7
Amsterdam 6
Basel 6
Bishkek 6
Falls Church 6
Los Angeles 6
Council Bluffs 5
Luanda 5
Nouakchott 5
Nuremberg 5
Rome 5
Roxbury 5
Seoul 5
Shenyang 5
Tallinn 5
Vienna 5
Accra 4
Bridgetown 4
Chennai 4
Conakry 4
Dakar 4
Limassol 4
Patna 4
Ranchi 4
Redondo Beach 4
Tashkent 4
Willemstad 4
Antananarivo 3
Bamako 3
Brazzaville 3
Castries 3
Charlotte 3
Dallas 3
Gaborone 3
Haiphong 3
Havana 3
Hebei 3
Jinan 3
Kampala 3
Kuala Lumpur 3
Luxembourg 3
Managua 3
Milan 3
Norwalk 3
Ouagadougou 3
Phoenix 3
Praia 3
Pristina 3
Riga 3
Riyadh 3
San José 3
Stockholm 3
Amman 2
Antakya 2
Athens 2
Baghdad 2
Baku 2
Banjul 2
Belo Horizonte 2
Bobo-Dioulasso 2
Boston 2
Brooklyn 2
Brussels 2
Cairo 2
Central 2
Copenhagen 2
Totale 2.370
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Nome #
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs 550
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 199
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs 172
Degradation physics of GaN-based lateral and vertical devices 172
Evidence for double degradation regime in off-state stressed 100 V GaN transistors: From dielectric failure to subthreshold current increase 142
Reliability and failure analysis in power GaN-HEMTs: An overview 141
GaN HEMTs with p-GaN gate: Field-And time-dependent degradation 138
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment 134
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping 122
Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress 119
Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate 118
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors 114
Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs 114
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level 110
OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution 104
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 101
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions 100
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 97
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 95
Gallium Nitride power devices: challenges and perspectives 88
Recent Advancements in Power GaN Reliability 84
Challenges towards highly reliable GaN power transistors 83
GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal 76
Evidence for Avalanche Operation in Sub-Micrometer Power GaN HEMTs with p-GaN Gate 20
Modeling of the gate leakage and forward gate reliability in Schottky-gate p-GaN HEMTs 9
Gate leakage modeling and reliability in forward gate bias of p-GaN HEMTs with Schottky-gate 7
Totale 3.209
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Categoria #
all - tutte 9.922
article - articoli 4.164
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 14.086
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021293 0 0 9 11 4 5 32 131 29 17 32 23
2021/2022406 6 55 44 18 6 7 26 29 20 36 60 99
2022/2023475 65 51 50 54 46 21 38 38 33 8 33 38
2023/2024287 37 45 42 33 33 60 4 4 2 2 10 15
2024/2025618 1 25 16 31 76 40 15 78 34 14 124 164
2025/2026630 158 221 251 0 0 0 0 0 0 0 0 0
Totale 3.209