CANATO, ELEONORA
 Distribuzione geografica
Continente #
NA - Nord America 1.370
EU - Europa 583
AS - Asia 162
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 2
SA - Sud America 1
Totale 2.120
Nazione #
US - Stati Uniti d'America 1.370
IE - Irlanda 405
IT - Italia 84
CN - Cina 77
SG - Singapore 57
UA - Ucraina 18
FR - Francia 15
SE - Svezia 14
GB - Regno Unito 12
FI - Finlandia 11
IN - India 11
DE - Germania 10
KR - Corea 9
CH - Svizzera 7
GR - Grecia 5
A2 - ???statistics.table.value.countryCode.A2??? 2
HK - Hong Kong 2
MY - Malesia 2
AU - Australia 1
BR - Brasile 1
IL - Israele 1
IQ - Iraq 1
JP - Giappone 1
NZ - Nuova Zelanda 1
PL - Polonia 1
RO - Romania 1
TW - Taiwan 1
Totale 2.120
Città #
Dublin 405
Fairfield 235
Houston 155
Chandler 115
Woodbridge 115
Ashburn 111
Cambridge 87
Seattle 76
Santa Clara 71
Wilmington 68
Ann Arbor 59
Singapore 51
Boardman 37
San Diego 27
Medford 22
Princeton 22
Beijing 20
New York 20
Des Moines 14
Padova 11
Helsinki 10
Hwaseong-si 9
Nanjing 8
Basel 6
Falls Church 6
Roxbury 5
Shenyang 5
London 4
Patna 4
Ranchi 4
Hebei 3
Jinan 3
Norwalk 3
Central 2
Dortmund 2
Fuzhou 2
Guangzhou 2
Hangzhou 2
Hefei 2
Kanpur 2
Kharkiv 2
Kilburn 2
Kuala Lumpur 2
Milan 2
Nanchang 2
Washington 2
Andover 1
Athens 1
Baghdad 1
Bristol 1
Böblingen 1
Changsha 1
Dallas 1
Denver 1
Draveil 1
Esslingen am Neckar 1
Haifa 1
Hamilton 1
Hounslow 1
Hsinchu 1
Jiaxing 1
Liestal 1
Miami Beach 1
Milton Keynes 1
Munich 1
New Bedfont 1
Ningbo 1
Nuremberg 1
Pune 1
Rapino 1
Rockville 1
Shaoxing 1
Southwark 1
São Paulo 1
Tappahannock 1
Treviso 1
Warsaw 1
Xian 1
Zhengzhou 1
Totale 1.850
Nome #
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs 518
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 148
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs 135
Degradation physics of GaN-based lateral and vertical devices 124
GaN HEMTs with p-GaN gate: Field-And time-dependent degradation 103
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment 101
Reliability and failure analysis in power GaN-HEMTs: An overview 99
Positive temperature dependence of time-dependent breakdown of GaN-on-Si E-mode HEMTs under positive gate stress 88
Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level 76
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors 76
Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs 75
Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate 74
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping 74
OFF-state trapping phenomena in GaN HEMTs: Interplay between gate trapping, acceptor ionization and positive charge redistribution 64
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions 57
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 56
Gallium Nitride power devices: challenges and perspectives 54
Recent Advancements in Power GaN Reliability 49
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 49
Challenges towards highly reliable GaN power transistors 47
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 46
GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal 34
Totale 2.147
Categoria #
all - tutte 7.165
article - articoli 3.085
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 10.250


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020266 0 0 0 0 0 15 23 37 70 76 27 18
2020/2021329 14 22 9 11 4 5 32 131 29 17 32 23
2021/2022406 6 55 44 18 6 7 26 29 20 36 60 99
2022/2023475 65 51 50 54 46 21 38 38 33 8 33 38
2023/2024287 37 45 42 33 33 60 4 4 2 2 10 15
2024/2025186 1 25 16 31 76 37 0 0 0 0 0 0
Totale 2.147