In this study, we propose a technique to evaluate the transient threshold voltage behavior of p-GaN capped AlGaN/GaN high-electron-mobility transistors (HEMTs). The threshold voltage is monitored from 10 μs to 100 s during positive gate bias stress. Technology computer-aided design (TCAD) simulations offer in-depth analysis of the different threshold voltage instability mechanisms: (i) electron trapping at the AlGaN/GaN interface, (ii) hole accumulation and trapping at the p-GaN/AlGaN interface and in the AlGaN barrier, respectively, and (iii) hole depletion of the p-GaN layer.
Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs
Canato E.;Meneghini M.;Meneghesso G.;
2019
Abstract
In this study, we propose a technique to evaluate the transient threshold voltage behavior of p-GaN capped AlGaN/GaN high-electron-mobility transistors (HEMTs). The threshold voltage is monitored from 10 μs to 100 s during positive gate bias stress. Technology computer-aided design (TCAD) simulations offer in-depth analysis of the different threshold voltage instability mechanisms: (i) electron trapping at the AlGaN/GaN interface, (ii) hole accumulation and trapping at the p-GaN/AlGaN interface and in the AlGaN barrier, respectively, and (iii) hole depletion of the p-GaN layer.File in questo prodotto:
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