BUTTARI, DARIO
 Distribuzione geografica
Continente #
NA - Nord America 1.131
EU - Europa 80
AS - Asia 71
Totale 1.282
Nazione #
US - Stati Uniti d'America 1.131
CN - Cina 48
FI - Finlandia 24
DE - Germania 21
UA - Ucraina 18
SG - Singapore 16
FR - Francia 6
VN - Vietnam 5
GB - Regno Unito 4
SE - Svezia 4
KR - Corea 2
IE - Irlanda 1
IT - Italia 1
RU - Federazione Russa 1
Totale 1.282
Città #
Fairfield 171
Woodbridge 138
Ann Arbor 132
Houston 132
Ashburn 82
Jacksonville 81
Wilmington 72
Chandler 59
Seattle 59
Cambridge 51
Des Moines 27
Beijing 26
Princeton 21
Singapore 14
Medford 10
Helsinki 9
San Diego 8
Nanjing 6
Dong Ket 5
Jiaxing 5
Nanchang 3
Redwood City 3
Boardman 2
Indiana 2
Kharkiv 2
London 2
Norwalk 2
Roxbury 2
San Francisco 2
Shenyang 2
Changsha 1
Dublin 1
Hebei 1
Ithaca 1
Jinan 1
New York 1
San Jose 1
Seongbuk-gu 1
Southend 1
Tianjin 1
Washington 1
Xian 1
Zhengzhou 1
Totale 1.143
Nome #
2.1 A/mm current density AlGaN/GaN HEMT 151
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 148
Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs 141
Temperature coefficient of on-state breakdown in InP- and GaAs-based heterostructure FETs 102
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs 99
Parasitic effects and long term stability of InP-based HEMTs 92
Pulsed measurements and circuit modeling of a new breakdown mechanism of MESFETs and HEMTs 86
DC and Pulsed measurements of on-state breakdown voltage 79
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs 76
Hole impact Ionization coefficient in (100) oriented In0.53Ga0.47As based on pnp InAlAs/InGaAs HBTs 74
Improvement of DC, low frequency and reliability properties of InAlAs/InGaAs InP-based HEMTs by means of an InP etch stop layerInternational Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) 69
Current Collapse in AlGaN/GaN HEMTs 53
Characterization and reliability of InP-based HEMTs implemented with different process options 52
Hot Electrons and Reliability in HEMTs 37
Reactive Ion Etching for Improved Ohmics in AlGaN/GaN HEMT's 24
Totale 1.283
Categoria #
all - tutte 4.737
article - articoli 2.147
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 6.884


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020345 0 0 1 113 33 29 27 39 33 33 27 10
2020/2021158 14 10 10 4 5 22 2 24 23 14 16 14
2021/2022143 1 13 25 4 7 9 4 22 11 0 23 24
2022/2023149 25 0 0 12 29 42 0 14 21 0 5 1
2023/202456 6 11 4 7 1 9 3 0 1 0 4 10
2024/202511 0 5 6 0 0 0 0 0 0 0 0 0
Totale 1.283