BUTTARI, DARIO
 Distribuzione geografica
Continente #
NA - Nord America 1.179
AS - Asia 109
EU - Europa 82
Totale 1.370
Nazione #
US - Stati Uniti d'America 1.179
CN - Cina 63
SG - Singapore 36
FI - Finlandia 24
DE - Germania 21
UA - Ucraina 18
FR - Francia 6
GB - Regno Unito 5
VN - Vietnam 5
SE - Svezia 4
KR - Corea 2
RU - Federazione Russa 2
TW - Taiwan 2
HK - Hong Kong 1
IE - Irlanda 1
IT - Italia 1
Totale 1.370
Città #
Fairfield 171
Woodbridge 138
Ann Arbor 132
Houston 132
Ashburn 82
Jacksonville 81
Wilmington 72
Chandler 59
Seattle 59
Cambridge 51
Singapore 32
Santa Clara 30
Des Moines 27
Beijing 26
Princeton 21
Boardman 17
Medford 10
Helsinki 9
San Diego 8
Nanjing 6
Dong Ket 5
Jiaxing 5
Nanchang 3
Redwood City 3
Indiana 2
Kharkiv 2
London 2
Norwalk 2
Roxbury 2
San Francisco 2
Shenyang 2
Taoyuan District 2
Changsha 1
Dublin 1
Hebei 1
Hong Kong 1
Ithaca 1
Jinan 1
New York 1
San Jose 1
Seongbuk-gu 1
Southend 1
Tianjin 1
Washington 1
Xian 1
Zhengzhou 1
Totale 1.209
Nome #
2.1 A/mm current density AlGaN/GaN HEMT 159
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 155
Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs 146
Temperature coefficient of on-state breakdown in InP- and GaAs-based heterostructure FETs 108
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs 105
Parasitic effects and long term stability of InP-based HEMTs 97
Pulsed measurements and circuit modeling of a new breakdown mechanism of MESFETs and HEMTs 91
DC and Pulsed measurements of on-state breakdown voltage 85
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs 81
Hole impact Ionization coefficient in (100) oriented In0.53Ga0.47As based on pnp InAlAs/InGaAs HBTs 80
Improvement of DC, low frequency and reliability properties of InAlAs/InGaAs InP-based HEMTs by means of an InP etch stop layerInternational Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) 77
Characterization and reliability of InP-based HEMTs implemented with different process options 58
Current Collapse in AlGaN/GaN HEMTs 58
Hot Electrons and Reliability in HEMTs 42
Reactive Ion Etching for Improved Ohmics in AlGaN/GaN HEMT's 29
Totale 1.371
Categoria #
all - tutte 5.213
article - articoli 2.334
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.547


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020198 0 0 0 0 0 29 27 39 33 33 27 10
2020/2021158 14 10 10 4 5 22 2 24 23 14 16 14
2021/2022143 1 13 25 4 7 9 4 22 11 0 23 24
2022/2023149 25 0 0 12 29 42 0 14 21 0 5 1
2023/202456 6 11 4 7 1 9 3 0 1 0 4 10
2024/202599 0 5 8 23 32 31 0 0 0 0 0 0
Totale 1.371