BUTTARI, DARIO
 Distribuzione geografica
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Continente #
NA - Nord America 1.613
AS - Asia 716
EU - Europa 275
SA - Sud America 100
AF - Africa 99
OC - Oceania 12
Continente sconosciuto - Info sul continente non disponibili 2
Totale 2.817
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Nazione #
US - Stati Uniti d'America 1.551
SG - Singapore 233
CN - Cina 148
VN - Vietnam 125
BR - Brasile 48
DE - Germania 43
HK - Hong Kong 43
FI - Finlandia 29
PL - Polonia 29
FR - Francia 25
BD - Bangladesh 23
IT - Italia 22
UA - Ucraina 22
AR - Argentina 13
IN - India 11
TR - Turchia 11
GB - Regno Unito 10
JP - Giappone 10
MX - Messico 10
ET - Etiopia 9
IQ - Iraq 9
KR - Corea 8
RU - Federazione Russa 8
VE - Venezuela 8
BA - Bosnia-Erzegovina 7
JO - Giordania 7
PK - Pakistan 7
PY - Paraguay 7
SK - Slovacchia (Repubblica Slovacca) 7
BE - Belgio 6
CO - Colombia 6
LA - Repubblica Popolare Democratica del Laos 6
NI - Nicaragua 6
PS - Palestinian Territory 6
SA - Arabia Saudita 6
SE - Svezia 6
ZA - Sudafrica 6
AO - Angola 5
BO - Bolivia 5
BW - Botswana 5
CL - Cile 5
ID - Indonesia 5
LY - Libia 5
PH - Filippine 5
SN - Senegal 5
TT - Trinidad e Tobago 5
AD - Andorra 4
AM - Armenia 4
BY - Bielorussia 4
BZ - Belize 4
CA - Canada 4
CG - Congo 4
DO - Repubblica Dominicana 4
ES - Italia 4
GE - Georgia 4
HT - Haiti 4
HU - Ungheria 4
IE - Irlanda 4
JM - Giamaica 4
KH - Cambogia 4
MN - Mongolia 4
NO - Norvegia 4
PE - Perù 4
RO - Romania 4
TZ - Tanzania 4
UZ - Uzbekistan 4
AT - Austria 3
AZ - Azerbaigian 3
BS - Bahamas 3
CY - Cipro 3
CZ - Repubblica Ceca 3
EG - Egitto 3
GP - Guadalupe 3
HN - Honduras 3
IR - Iran 3
LV - Lettonia 3
MA - Marocco 3
MD - Moldavia 3
MG - Madagascar 3
ML - Mali 3
MW - Malawi 3
NP - Nepal 3
NZ - Nuova Zelanda 3
PF - Polinesia Francese 3
PG - Papua Nuova Guinea 3
RS - Serbia 3
TH - Thailandia 3
TJ - Tagikistan 3
TN - Tunisia 3
TW - Taiwan 3
UG - Uganda 3
AE - Emirati Arabi Uniti 2
AL - Albania 2
CI - Costa d'Avorio 2
CV - Capo Verde 2
EE - Estonia 2
GA - Gabon 2
GH - Ghana 2
GM - Gambi 2
GN - Guinea 2
Totale 2.749
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Città #
Fairfield 171
Ashburn 166
Singapore 141
Woodbridge 138
San Jose 136
Houston 133
Ann Arbor 132
Jacksonville 82
Wilmington 72
Seattle 62
Chandler 59
Cambridge 51
Beijing 41
Santa Clara 40
Ho Chi Minh City 39
Hong Kong 38
Hanoi 31
Des Moines 27
Bytom 26
Princeton 21
Boardman 17
Guangzhou 13
Helsinki 13
Lauterbourg 13
Los Angeles 11
San Diego 11
Medford 10
Munich 10
Addis Ababa 9
New York 9
Tokyo 7
Amman 6
Baghdad 6
Managua 6
Nanjing 6
Chicago 5
Dakar 5
Dong Ket 5
Falkenstein 5
Frankfurt am Main 5
Jiaxing 5
São Paulo 5
Vientiane 5
Andorra la Vella 4
Dar es Salaam 4
Fort Liberté 4
Mexico City 4
Orem 4
Phnom Penh 4
San Francisco 4
Tashkent 4
Ulan Bator 4
Antananarivo 3
Bangkok 3
Boston 3
Bratislava 3
Brooklyn 3
Budapest 3
Buenos Aires 3
Can Tho 3
Da Nang 3
Dallas 3
Dushanbe 3
Gaborone 3
Jeddah 3
Kampala 3
London 3
Luanda 3
Manassas 3
Milan 3
Nanchang 3
Nassau 3
New Orleans 3
Nicosia 3
Phoenix 3
Port Moresby 3
Redwood City 3
Riga 3
Riyadh 3
Santiago 3
Shenzhen 3
Toronto 3
Turin 3
Yerevan 3
Abidjan 2
Anaheim 2
Athens 2
Atlanta 2
Bamako 2
Belgrade 2
Berlin 2
Brno 2
Brussels 2
Bucharest 2
Buffalo 2
Bình Phước 2
Cabinda 2
Cairo 2
Campinas 2
Cape Town 2
Totale 1.957
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Nome #
2.1 A/mm current density AlGaN/GaN HEMT 282
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 255
Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs 251
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs 222
Improvement of DC, low frequency and reliability properties of InAlAs/InGaAs InP-based HEMTs by means of an InP etch stop layerInternational Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) 200
Parasitic effects and long term stability of InP-based HEMTs 188
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs 186
Hole impact Ionization coefficient in (100) oriented In0.53Ga0.47As based on pnp InAlAs/InGaAs HBTs 185
Temperature coefficient of on-state breakdown in InP- and GaAs-based heterostructure FETs 173
Pulsed measurements and circuit modeling of a new breakdown mechanism of MESFETs and HEMTs 173
DC and Pulsed measurements of on-state breakdown voltage 170
Current Collapse in AlGaN/GaN HEMTs 157
Characterization and reliability of InP-based HEMTs implemented with different process options 148
Hot Electrons and Reliability in HEMTs 121
Reactive Ion Etching for Improved Ohmics in AlGaN/GaN HEMT's 106
Totale 2.817
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Categoria #
all - tutte 8.779
article - articoli 3.867
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 12.646
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022142 0 13 25 4 7 9 4 22 11 0 23 24
2022/2023149 25 0 0 12 29 42 0 14 21 0 5 1
2023/202456 6 11 4 7 1 9 3 0 1 0 4 10
2024/2025296 0 5 8 23 32 31 21 25 15 3 62 71
2025/20261.200 42 90 131 156 171 58 142 123 143 69 37 38
2026/202749 35 14 0 0 0 0 0 0 0 0 0 0
Totale 2.817