BUTTARI, DARIO
 Distribuzione geografica
Continente #
NA - Nord America 1.190
AS - Asia 138
EU - Europa 102
SA - Sud America 1
Totale 1.431
Nazione #
US - Stati Uniti d'America 1.187
CN - Cina 64
SG - Singapore 64
DE - Germania 29
FI - Finlandia 26
UA - Ucraina 19
RU - Federazione Russa 7
FR - Francia 6
GB - Regno Unito 5
VN - Vietnam 5
SE - Svezia 4
CA - Canada 3
BE - Belgio 2
KR - Corea 2
TW - Taiwan 2
AT - Austria 1
BR - Brasile 1
HK - Hong Kong 1
IE - Irlanda 1
IT - Italia 1
NL - Olanda 1
Totale 1.431
Città #
Fairfield 171
Woodbridge 138
Ann Arbor 132
Houston 132
Ashburn 82
Jacksonville 81
Wilmington 72
Chandler 59
Seattle 59
Cambridge 51
Singapore 33
Santa Clara 30
Des Moines 27
Beijing 26
Princeton 21
Boardman 17
Helsinki 11
Medford 10
San Diego 8
Nanjing 6
Dong Ket 5
Falkenstein 5
Jiaxing 5
Nanchang 3
Redwood City 3
Toronto 3
Brussels 2
Indiana 2
Ithaca 2
Kharkiv 2
London 2
Norwalk 2
Roxbury 2
San Francisco 2
Shenyang 2
Taoyuan District 2
Amsterdam 1
Brody 1
Campinas 1
Changsha 1
Dublin 1
Frankfurt am Main 1
Guangzhou 1
Hebei 1
Hong Kong 1
Jinan 1
New York 1
San Jose 1
Seongbuk-gu 1
Southend 1
Tianjin 1
Washington 1
Xian 1
Zhengzhou 1
Totale 1.228
Nome #
2.1 A/mm current density AlGaN/GaN HEMT 164
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 158
Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs 152
Temperature coefficient of on-state breakdown in InP- and GaAs-based heterostructure FETs 111
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs 111
Parasitic effects and long term stability of InP-based HEMTs 101
Pulsed measurements and circuit modeling of a new breakdown mechanism of MESFETs and HEMTs 94
DC and Pulsed measurements of on-state breakdown voltage 89
Hole impact Ionization coefficient in (100) oriented In0.53Ga0.47As based on pnp InAlAs/InGaAs HBTs 84
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs 83
Improvement of DC, low frequency and reliability properties of InAlAs/InGaAs InP-based HEMTs by means of an InP etch stop layerInternational Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) 81
Characterization and reliability of InP-based HEMTs implemented with different process options 62
Current Collapse in AlGaN/GaN HEMTs 62
Hot Electrons and Reliability in HEMTs 46
Reactive Ion Etching for Improved Ohmics in AlGaN/GaN HEMT's 34
Totale 1.432
Categoria #
all - tutte 5.730
article - articoli 2.555
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 8.285


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020103 0 0 0 0 0 0 0 0 33 33 27 10
2020/2021158 14 10 10 4 5 22 2 24 23 14 16 14
2021/2022143 1 13 25 4 7 9 4 22 11 0 23 24
2022/2023149 25 0 0 12 29 42 0 14 21 0 5 1
2023/202456 6 11 4 7 1 9 3 0 1 0 4 10
2024/2025160 0 5 8 23 32 31 21 25 15 0 0 0
Totale 1.432