BUTTARI, DARIO
 Distribuzione geografica
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Continente #
NA - Nord America 1.565
AS - Asia 700
EU - Europa 258
AF - Africa 97
SA - Sud America 95
OC - Oceania 12
Continente sconosciuto - Info sul continente non disponibili 1
Totale 2.728
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Nazione #
US - Stati Uniti d'America 1.506
SG - Singapore 232
CN - Cina 147
VN - Vietnam 125
BR - Brasile 47
DE - Germania 43
HK - Hong Kong 41
FI - Finlandia 29
PL - Polonia 29
FR - Francia 24
UA - Ucraina 22
BD - Bangladesh 13
AR - Argentina 12
IN - India 11
TR - Turchia 11
GB - Regno Unito 10
ET - Etiopia 9
IQ - Iraq 9
JP - Giappone 9
MX - Messico 9
RU - Federazione Russa 8
BA - Bosnia-Erzegovina 7
IT - Italia 7
JO - Giordania 7
KR - Corea 7
PK - Pakistan 7
PY - Paraguay 7
SK - Slovacchia (Repubblica Slovacca) 7
VE - Venezuela 7
BE - Belgio 6
LA - Repubblica Popolare Democratica del Laos 6
NI - Nicaragua 6
PS - Palestinian Territory 6
SA - Arabia Saudita 6
SE - Svezia 6
ZA - Sudafrica 6
AO - Angola 5
BO - Bolivia 5
BW - Botswana 5
CO - Colombia 5
ID - Indonesia 5
LY - Libia 5
PH - Filippine 5
SN - Senegal 5
AD - Andorra 4
AM - Armenia 4
BY - Bielorussia 4
BZ - Belize 4
CA - Canada 4
CG - Congo 4
CL - Cile 4
DO - Repubblica Dominicana 4
GE - Georgia 4
HT - Haiti 4
HU - Ungheria 4
IE - Irlanda 4
KH - Cambogia 4
MN - Mongolia 4
NO - Norvegia 4
PE - Perù 4
RO - Romania 4
TT - Trinidad e Tobago 4
TZ - Tanzania 4
UZ - Uzbekistan 4
AT - Austria 3
AZ - Azerbaigian 3
BS - Bahamas 3
CY - Cipro 3
CZ - Repubblica Ceca 3
EG - Egitto 3
ES - Italia 3
GP - Guadalupe 3
HN - Honduras 3
IR - Iran 3
JM - Giamaica 3
LV - Lettonia 3
MA - Marocco 3
MD - Moldavia 3
MG - Madagascar 3
ML - Mali 3
MW - Malawi 3
NP - Nepal 3
NZ - Nuova Zelanda 3
PF - Polinesia Francese 3
PG - Papua Nuova Guinea 3
RS - Serbia 3
TH - Thailandia 3
TJ - Tagikistan 3
TN - Tunisia 3
TW - Taiwan 3
UG - Uganda 3
AE - Emirati Arabi Uniti 2
AL - Albania 2
CI - Costa d'Avorio 2
CV - Capo Verde 2
EE - Estonia 2
GA - Gabon 2
GH - Ghana 2
GM - Gambi 2
GN - Guinea 2
Totale 2.663
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Città #
Fairfield 171
Ashburn 159
Singapore 140
Woodbridge 138
San Jose 136
Ann Arbor 132
Houston 132
Jacksonville 81
Wilmington 72
Seattle 62
Chandler 59
Cambridge 51
Beijing 41
Ho Chi Minh City 39
Hong Kong 38
Santa Clara 37
Hanoi 31
Des Moines 27
Bytom 26
Princeton 21
Boardman 17
Guangzhou 13
Helsinki 13
Lauterbourg 13
Los Angeles 10
Medford 10
Munich 10
Addis Ababa 9
San Diego 9
Amman 6
Baghdad 6
Managua 6
Nanjing 6
New York 6
Tokyo 6
Chicago 5
Dakar 5
Dong Ket 5
Falkenstein 5
Frankfurt am Main 5
Jiaxing 5
São Paulo 5
Vientiane 5
Andorra la Vella 4
Dar es Salaam 4
Fort Liberté 4
Mexico City 4
Orem 4
Phnom Penh 4
San Francisco 4
Tashkent 4
Ulan Bator 4
Antananarivo 3
Bangkok 3
Boston 3
Bratislava 3
Brooklyn 3
Budapest 3
Can Tho 3
Da Nang 3
Dushanbe 3
Gaborone 3
Jeddah 3
Kampala 3
London 3
Luanda 3
Manassas 3
Nanchang 3
Nassau 3
Nicosia 3
Phoenix 3
Port Moresby 3
Redwood City 3
Riga 3
Riyadh 3
Santiago 3
Shenzhen 3
Toronto 3
Yerevan 3
Abidjan 2
Athens 2
Bamako 2
Belgrade 2
Brno 2
Brussels 2
Bucharest 2
Buenos Aires 2
Buffalo 2
Bình Phước 2
Cabinda 2
Cairo 2
Campinas 2
Cape Town 2
Changsha 2
Chennai 2
Chisinau 2
Cochabamba 2
Conakry 2
Dhaka 2
Dublin 2
Totale 1.932
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Nome #
2.1 A/mm current density AlGaN/GaN HEMT 278
Experimental/Numerical Investigation on Current Collapse in AlGaN/GaN HEMT's 250
Measurements of the InGaAs Hole Impact Ionization Coefficient in InAlAs/InGaAs pnp HBTs 245
Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs 220
Improvement of DC, low frequency and reliability properties of InAlAs/InGaAs InP-based HEMTs by means of an InP etch stop layerInternational Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) 185
Parasitic effects and long term stability of InP-based HEMTs 184
Systematic characterization of Cl2 reactive ion etching for gate recessing in AlGaN/GaN HEMTs 183
Hole impact Ionization coefficient in (100) oriented In0.53Ga0.47As based on pnp InAlAs/InGaAs HBTs 179
Temperature coefficient of on-state breakdown in InP- and GaAs-based heterostructure FETs 169
DC and Pulsed measurements of on-state breakdown voltage 164
Pulsed measurements and circuit modeling of a new breakdown mechanism of MESFETs and HEMTs 158
Current Collapse in AlGaN/GaN HEMTs 152
Characterization and reliability of InP-based HEMTs implemented with different process options 144
Hot Electrons and Reliability in HEMTs 117
Reactive Ion Etching for Improved Ohmics in AlGaN/GaN HEMT's 101
Totale 2.729
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Categoria #
all - tutte 8.319
article - articoli 3.681
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 12.000
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202130 0 0 0 0 0 0 0 0 0 0 16 14
2021/2022143 1 13 25 4 7 9 4 22 11 0 23 24
2022/2023149 25 0 0 12 29 42 0 14 21 0 5 1
2023/202456 6 11 4 7 1 9 3 0 1 0 4 10
2024/2025296 0 5 8 23 32 31 21 25 15 3 62 71
2025/20261.161 42 90 131 156 171 58 142 123 143 69 36 0
Totale 2.729