We measured the on-state breakdown of HEMTs in a nondestructive way using the Transmission Line Pulse technique reaching very high values of gate current density (30 mA/mm). On the basis of the experimental observations, we developed a new model for on-state breakdown of HEMTs, suitable for SPICE simulations, which is capable of predicting the breakdown curves. We have shown that a parasitic bipolar action can give rise in HEMTs to a new form of breakdown, which is accurately modeled by the SPICE equivalent circuit. The model not only predicts IG, but consistently describes ID up to breakdown levels
Pulsed measurements and circuit modeling of a new breakdown mechanism of MESFETs and HEMTs
ZANONI, ENRICO;MENEGHESSO, GAUDENZIO;BUTTARI, DARIO;
2000
Abstract
We measured the on-state breakdown of HEMTs in a nondestructive way using the Transmission Line Pulse technique reaching very high values of gate current density (30 mA/mm). On the basis of the experimental observations, we developed a new model for on-state breakdown of HEMTs, suitable for SPICE simulations, which is capable of predicting the breakdown curves. We have shown that a parasitic bipolar action can give rise in HEMTs to a new form of breakdown, which is accurately modeled by the SPICE equivalent circuit. The model not only predicts IG, but consistently describes ID up to breakdown levels
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