CELLERE, GIORGIO
CELLERE, GIORGIO
Angular dependence of heavy ion effects in Floating Gate memory arrays
2007 Cellere, Giorgio; Paccagnella, Alessandro; Visconti, A; Bonanomi, M; HARBOE SORENSEN, R; Virtanen, A.
Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size Dependence
2010 Bagatin, Marta; Gerardin, Simone; Cellere, Giorgio; Paccagnella, Alessandro; Visconti, A; Beltrami, S; Bonanomi, M; HARBOE SORENSEN, R.
Can Atmospheric Neutrons Induce Soft Errors in NAND Floating Gate Memories?
2009 Cellere, Giorgio; Gerardin, Simone; Bagatin, Marta; Paccagnella, Alessandro; Visconti, A; Bonanomi, M; Beltrami, S; HARBOE SORENSEN, R; Virtanen, A; Roche, P.
Catastrophic Failure in Highly Scaled Commercial NAND Flash Memories
2010 Irom, F; Nguyen, Dn; Bagatin, Marta; Cellere, Giorgio; Gerardin, Simone; Paccagnella, Alessandro
Depassivation of Latent Plasma Damage in n-MOSFETs
2001 Cellere, Giorgio; L., Pantisano; Paccagnella, Alessandro; M. G., Valentini
Destructive events in NAND Flash memories irradiated with heavy ions
2010 Bagatin, Marta; Gerardin, Simone; Paccagnella, Alessandro; Cellere, Giorgio; Irom, F; Nguyen, Dn
Error Instability in Floating Gate Flash Memories Exposed to TID
2009 Bagatin, Marta; Gerardin, Simone; Cellere, Giorgio; Paccagnella, Alessandro; A., Visconti; M., Bonanomi; S., Beltrami
Heavy-Ion Induced Threshold Voltage Tails in Floating Gate Arrays
2010 Gerardin, Simone; Bagatin, Marta; Paccagnella, Alessandro; Cellere, Giorgio; A., Visconti; M., Bonanomi; A., Hjalmarsson; A. V., Prokofiev
Impact of time and space evolution of ion tracks in nonvolatile memory cells approaching nanoscale
2010 Cellere, Giorgio; Paccagnella, Alessandro; M., Murat; J., Barak; A., Akkerman; R., Harboe Sorensen; A., Virtanen; A., Visconti; M., Bonanomi
Impact of total dose on heavy-ion upsets in floating gate arrays
2010 Gerardin, Simone; Bagatin, Marta; Paccagnella, Alessandro; Cellere, Giorgio; Visconti, A; Bonanomi, M.
Increase in the Heavy-ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID
2010 Bagatin, Marta; Gerardin, Simone; Paccagnella, Alessandro; Cellere, Giorgio; A., Visconti; M., Bonanomi
Influence of dielectric breakdown on MOSFET drain current
2005 Cellere, Giorgio; Paccagnella, Alessandro; Mazzocchi, A; Valentini, Mg
Key Contributions to the Cross Section of NAND Flash Memories Irradiated with Heavy Ions
2008 Bagatin, Marta; Gerardin, Simone; Cellere, Giorgio; Paccagnella, Alessandro; Visconti, A; Beltrami, S; HARBOE SORENSEN, R; Virtanen, A.
Radiation-induced depassivation of latent plasma damage
2002 Cellere, G.; Paccagnella, Alessandro; Pantisano, L.; Valentini, M. G.; Flament, O.; Mosseau, O.; Fuochi, P. G.
Space and time-resolved gene expression experiments on cultured mammalian cells by a single-cell electroporation microarray
2008 Vassanelli, Stefano; Bandiera, Leonardo; Borgo, Mauro; Cellere, Giorgio; Santoni, L; Bersani, C; Salamon, Michela; Zaccolo, Manuela; Lorenzelli, L; Girardi, Stefano; Maschietto, Marta; DAL MASCHIO, M; Paccagnella, Alessandro
TID Sensitivity of NAND Flash Memory Building Blocks
2009 Bagatin, Marta; Cellere, Giorgio; Gerardin, Simone; Paccagnella, Alessandro; Visconti, A; Beltrami, S.
Transfecting targeted adherent single cells
2008 Borgo, Mauro; L., Santoni; Bandiera, Leonardo; Vassanelli, Stefano; Cellere, Giorgio