Indispensable in CMOS manufacturing, plasma treatments may result in a latent damage in gate oxides. We propose a method to detect this latent damage as a function of the area of the multifingered metal pad connected to the gate, by using an experimental method based on constant current stress and oxide trapped charge measurements. We measured a power law behavior describing the dependence of the trapped charge on the injected charge.
Depassivation of Latent Plasma Damage in n-MOSFETs
CELLERE, GIORGIO;PACCAGNELLA, ALESSANDRO;
2001
Abstract
Indispensable in CMOS manufacturing, plasma treatments may result in a latent damage in gate oxides. We propose a method to detect this latent damage as a function of the area of the multifingered metal pad connected to the gate, by using an experimental method based on constant current stress and oxide trapped charge measurements. We measured a power law behavior describing the dependence of the trapped charge on the injected charge.
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