LEVADA, SIMONE
 Distribuzione geografica
Salva come PNG Salva come JPEG
Continente #
NA - Nord America 1.542
EU - Europa 118
AS - Asia 96
Continente sconosciuto - Info sul continente non disponibili 1
Totale 1.757
Salva come PNG Salva come JPEG
Nazione #
US - Stati Uniti d'America 1.540
CN - Cina 56
FI - Finlandia 28
UA - Ucraina 28
DE - Germania 27
SG - Singapore 15
VN - Vietnam 13
SE - Svezia 12
IT - Italia 9
GB - Regno Unito 7
IN - India 6
IE - Irlanda 5
JP - Giappone 3
TR - Turchia 3
CA - Canada 2
RU - Federazione Russa 2
EU - Europa 1
Totale 1.757
Salva come PNG Salva come JPEG
Città #
Fairfield 219
Woodbridge 180
Houston 174
Ann Arbor 142
Jacksonville 137
Chandler 114
Wilmington 106
Ashburn 99
Seattle 87
Cambridge 78
Des Moines 32
Princeton 28
Beijing 20
Nanjing 19
Roxbury 19
Dong Ket 13
Medford 13
Boardman 12
San Diego 12
Singapore 11
Helsinki 8
Jiaxing 6
Pune 6
Dublin 5
London 4
Norwalk 4
Indiana 3
Kharkiv 3
Nanchang 3
Tianjin 3
Tokyo 3
Yenibosna 3
Cagliari 2
Chicago 2
Mestre 2
Nürnberg 2
Tomsk 2
Foshan 1
Frankfurt am Main 1
Hangzhou 1
Hebei 1
Isola Della Scala 1
Las Vegas 1
Leawood 1
Los Angeles 1
Montreal 1
Ogden 1
Padova 1
Poughkeepsie 1
Redwood City 1
Sala Baganza 1
Shenyang 1
The Bronx 1
Totale 1.592
Salva come PNG Salva come JPEG
Nome #
Analysis of DC Current Accelerated Life Tests of GaN LEDs Using a Weibull-Based Statistical Model 153
Failure modes and mechanisms of DC-aged GaN LEDs 152
Degradation mechanisms of GaN-based LEDs after accelerated DC current aging 138
Failure mechanisms of gallium nitride LEDs related with passivation 126
The role of Mg complexes in the degradation of InGaN-based LEDs 118
Reliability of visible GaN LEDs in plastic package 117
Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress 115
Failure Mechanisms of GaN-based LEDs related with instabilities in Doping Profile and Deep Levels 108
Short-term instabilities of InGaN/GaN light-emitting diodes by capacitance-voltage characteristics and junction spectroscopy 95
Study of short-term instabilities in InGaN/GaN light-emitting diodes by means of capacitance voltage measurements and deep-level transient spectroscopy 79
Accelerated aging of GaN light emitting diodes studied by 1/f and RTS noise 75
Defect diagnostics of degradation mechanisms of GaN-based LEDs after accelerated DC current ageing 69
Factors limiting the High Brightness InGaN LEDs performance at high injection current bias 68
Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy 63
Reliability of GaN-based LEDs 62
Reliability analysis of GaN-Based LEDs for solid state illumination 55
Characterization of power LEDs for general lighting application 52
Degradation effects in InGaN/GaN light emitting diodes 47
Luminescence properties of GaN LEDs after DC-aging 36
Reliability analysis of Gan-Based LEDs for solid state illumination 29
Totale 1.757
Salva come PNG Salva come JPEG
Categoria #
all - tutte 5.388
article - articoli 2.128
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.516
Salva come PNG Salva come JPEG


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020526 50 6 7 169 46 40 28 56 47 31 28 18
2020/2021256 14 23 9 18 15 26 13 33 26 24 33 22
2021/2022213 5 39 18 16 4 9 10 20 8 5 34 45
2022/2023240 43 23 6 26 31 73 0 6 21 1 7 3
2023/202469 5 13 1 2 9 11 2 2 3 4 11 6
Totale 1.757