LEVADA, SIMONE
 Distribuzione geografica
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Continente #
NA - Nord America 1.638
AS - Asia 138
EU - Europa 125
Continente sconosciuto - Info sul continente non disponibili 1
Totale 1.902
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Nazione #
US - Stati Uniti d'America 1.636
CN - Cina 76
SG - Singapore 35
FI - Finlandia 28
UA - Ucraina 28
DE - Germania 27
VN - Vietnam 13
SE - Svezia 12
IT - Italia 11
GB - Regno Unito 7
IN - India 6
FR - Francia 5
IE - Irlanda 5
JP - Giappone 3
TR - Turchia 3
CA - Canada 2
RU - Federazione Russa 2
EU - Europa 1
HK - Hong Kong 1
LK - Sri Lanka 1
Totale 1.902
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Città #
Fairfield 219
Woodbridge 180
Houston 174
Ann Arbor 142
Jacksonville 137
Chandler 114
Wilmington 106
Ashburn 104
Seattle 87
Cambridge 78
Santa Clara 65
Boardman 32
Des Moines 32
Singapore 29
Princeton 28
Beijing 20
Nanjing 19
Roxbury 19
Dong Ket 13
Medford 13
San Diego 12
Helsinki 8
Jiaxing 6
Pune 6
Dublin 5
London 4
Norwalk 4
Indiana 3
Kharkiv 3
Nanchang 3
Tianjin 3
Tokyo 3
Yenibosna 3
Cagliari 2
Chicago 2
Los Angeles 2
Mestre 2
Nürnberg 2
Padova 2
Tomsk 2
Colombo 1
Foshan 1
Frankfurt am Main 1
Hangzhou 1
Hebei 1
Hong Kong 1
Isola Della Scala 1
Las Vegas 1
Leawood 1
Montreal 1
Ogden 1
Poughkeepsie 1
Redwood City 1
Rome 1
Sala Baganza 1
Shenyang 1
The Bronx 1
Totale 1.705
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Nome #
Failure modes and mechanisms of DC-aged GaN LEDs 159
Analysis of DC Current Accelerated Life Tests of GaN LEDs Using a Weibull-Based Statistical Model 159
Degradation mechanisms of GaN-based LEDs after accelerated DC current aging 147
Failure mechanisms of gallium nitride LEDs related with passivation 134
The role of Mg complexes in the degradation of InGaN-based LEDs 124
Reliability of visible GaN LEDs in plastic package 124
Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress 120
Failure Mechanisms of GaN-based LEDs related with instabilities in Doping Profile and Deep Levels 116
Short-term instabilities of InGaN/GaN light-emitting diodes by capacitance-voltage characteristics and junction spectroscopy 100
Study of short-term instabilities in InGaN/GaN light-emitting diodes by means of capacitance voltage measurements and deep-level transient spectroscopy 84
Accelerated aging of GaN light emitting diodes studied by 1/f and RTS noise 83
Defect diagnostics of degradation mechanisms of GaN-based LEDs after accelerated DC current ageing 77
Factors limiting the High Brightness InGaN LEDs performance at high injection current bias 75
Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy 72
Reliability of GaN-based LEDs 69
Characterization of power LEDs for general lighting application 61
Reliability analysis of GaN-Based LEDs for solid state illumination 61
Degradation effects in InGaN/GaN light emitting diodes 54
Luminescence properties of GaN LEDs after DC-aging 47
Reliability analysis of Gan-Based LEDs for solid state illumination 36
Totale 1.902
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Categoria #
all - tutte 6.223
article - articoli 2.436
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 8.659
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020208 0 0 0 0 0 0 28 56 47 31 28 18
2020/2021256 14 23 9 18 15 26 13 33 26 24 33 22
2021/2022213 5 39 18 16 4 9 10 20 8 5 34 45
2022/2023240 43 23 6 26 31 73 0 6 21 1 7 3
2023/202469 5 13 1 2 9 11 2 2 3 4 11 6
2024/2025145 1 13 14 26 83 8 0 0 0 0 0 0
Totale 1.902