In this work we report on a reliability study carried out over InGaN/GaN LEDs. Accelerated life tests have been carried out at various biasing current levels and at various temperature. Failure modes have been identified and correlated with the instability of Magnesium as dopant in the p-layer and with the worsening of the efficiency of the quantum well in active layer.
Failure Mechanisms of GaN-based LEDs related with instabilities in Doping Profile and Deep Levels
MENEGHESSO, GAUDENZIO;LEVADA, SIMONE;ZANONI, ENRICO;
2004
Abstract
In this work we report on a reliability study carried out over InGaN/GaN LEDs. Accelerated life tests have been carried out at various biasing current levels and at various temperature. Failure modes have been identified and correlated with the instability of Magnesium as dopant in the p-layer and with the worsening of the efficiency of the quantum well in active layer.
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