This work presents the results of an extensive DC current aging and failure analysis carried out on blue InGaN/GaN LEDs which identify failure mechanisms related to package degradation, changes in effective doping profile, and generation of deep levels. DLTS and ElectroLuminescence (EL) spectra indicate the creation of extended defects in devices aged at very high current density.
Reliability analysis of GaN-Based LEDs for solid state illumination
MENEGHESSO, GAUDENZIO;LEVADA, SIMONE;PIEROBON, ROBERTO;RAMPAZZO, FABIANA;ZANONI, ENRICO;
2003
Abstract
This work presents the results of an extensive DC current aging and failure analysis carried out on blue InGaN/GaN LEDs which identify failure mechanisms related to package degradation, changes in effective doping profile, and generation of deep levels. DLTS and ElectroLuminescence (EL) spectra indicate the creation of extended defects in devices aged at very high current density.
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