This paper reports the experimental demonstration of a novel degradation mechanism of high-power AlGaN/GaN high electron mobility transistors (HEMTs), that is, time-dependent drain-source breakdown. With current-controlled breakdown measurements and constant voltage stress experiments we demonstrate that: 1) when submitted to constant voltage stress, in the OFF-state, the HEMTs can show a significant degradation; 2) the degradation process is time-dependent, and consists of a measurable increase in subthreshold drain-source leakage; this effect is ascribed to the accumulation of positive charge in proximity of the gate, consistently with previous theoretical calculations; and 3) a catastrophic (and permanent) failure is observed for long stress times, possibly due to thermal runaway or to the increase in the electric field in proximity of the localized drain-source leakage paths.

OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown

MENEGHINI, MATTEO;CIBIN, GIULIA;BERTIN, MARCO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2014

Abstract

This paper reports the experimental demonstration of a novel degradation mechanism of high-power AlGaN/GaN high electron mobility transistors (HEMTs), that is, time-dependent drain-source breakdown. With current-controlled breakdown measurements and constant voltage stress experiments we demonstrate that: 1) when submitted to constant voltage stress, in the OFF-state, the HEMTs can show a significant degradation; 2) the degradation process is time-dependent, and consists of a measurable increase in subthreshold drain-source leakage; this effect is ascribed to the accumulation of positive charge in proximity of the gate, consistently with previous theoretical calculations; and 3) a catastrophic (and permanent) failure is observed for long stress times, possibly due to thermal runaway or to the increase in the electric field in proximity of the localized drain-source leakage paths.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3065514
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