Highly stable low noise / high power AlN/GaN-on-silicon double heterostructure HEMTs operating at 40 GHz

In this paper, an emerging double heterostructure high electron mobility transistor (DHFET) based on AlN/GaN/AlGaN grown on silicon substrate is presented. This configuration system allowed state-of-the-art GaN-on-silicon DC, RF output power and noise performances at 40 GHz, paving the way for high performance mmW cost-effective amplifiers. Preliminary reliability assessment has been performed on this new class of RF devices, showing promising mmW GaN-on-Si device stability for the first time. © 2013 IEEE.