TAJALLI, ALALEH
 Distribuzione geografica
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Continente #
NA - Nord America 2.538
AS - Asia 1.416
EU - Europa 678
AF - Africa 247
SA - Sud America 178
Continente sconosciuto - Info sul continente non disponibili 46
OC - Oceania 17
Totale 5.120
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Nazione #
US - Stati Uniti d'America 2.396
SG - Singapore 437
CN - Cina 282
VN - Vietnam 190
HK - Hong Kong 149
IT - Italia 126
BR - Brasile 84
PL - Polonia 66
IN - India 62
DE - Germania 59
FR - Francia 47
GB - Regno Unito 40
FI - Finlandia 33
SE - Svezia 32
BD - Bangladesh 31
IQ - Iraq 30
CI - Costa d'Avorio 29
NL - Olanda 27
CA - Canada 26
CH - Svizzera 22
RU - Federazione Russa 20
PK - Pakistan 19
TW - Taiwan 19
UA - Ucraina 19
AR - Argentina 18
JP - Giappone 18
EC - Ecuador 16
BJ - Benin 15
KR - Corea 14
MX - Messico 14
SA - Arabia Saudita 14
TR - Turchia 14
AT - Austria 13
ES - Italia 13
VE - Venezuela 13
MY - Malesia 12
CR - Costa Rica 11
IE - Irlanda 11
ZA - Sudafrica 11
CL - Cile 10
NI - Nicaragua 10
AD - Andorra 9
AO - Angola 9
BE - Belgio 9
BY - Bielorussia 9
CO - Colombia 9
CV - Capo Verde 9
DZ - Algeria 9
EE - Estonia 9
JM - Giamaica 9
LY - Libia 9
NP - Nepal 9
PH - Filippine 9
DO - Repubblica Dominicana 8
ID - Indonesia 8
IL - Israele 8
KG - Kirghizistan 8
RS - Serbia 8
SK - Slovacchia (Repubblica Slovacca) 8
SN - Senegal 8
AE - Emirati Arabi Uniti 7
AL - Albania 7
BG - Bulgaria 7
CG - Congo 7
CZ - Repubblica Ceca 7
GA - Gabon 7
GF - Guiana Francese 7
GM - Gambi 7
GR - Grecia 7
HR - Croazia 7
JO - Giordania 7
MG - Madagascar 7
MW - Malawi 7
PA - Panama 7
PY - Paraguay 7
RO - Romania 7
YT - Mayotte 7
CW - ???statistics.table.value.countryCode.CW??? 6
CY - Cipro 6
DK - Danimarca 6
HU - Ungheria 6
KE - Kenya 6
KH - Cambogia 6
KZ - Kazakistan 6
MD - Moldavia 6
MR - Mauritania 6
PS - Palestinian Territory 6
PT - Portogallo 6
RE - Reunion 6
TH - Thailandia 6
TZ - Tanzania 6
UY - Uruguay 6
UZ - Uzbekistan 6
YE - Yemen 6
BB - Barbados 5
BF - Burkina Faso 5
DJ - Gibuti 5
GN - Guinea 5
GP - Guadalupe 5
GT - Guatemala 5
Totale 4.887
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Città #
Ashburn 321
San Jose 313
Fairfield 252
Singapore 240
Woodbridge 142
Hong Kong 137
Chandler 129
Cambridge 117
Seattle 111
Houston 99
Santa Clara 96
Beijing 69
Ann Arbor 64
Ho Chi Minh City 61
Wilmington 57
Bytom 54
Boardman 42
Hanoi 42
Los Angeles 35
Leesburg 33
New York 33
Abidjan 29
Medford 28
Princeton 28
Des Moines 27
Lauterbourg 26
Helsinki 22
Munich 22
Orem 22
San Diego 22
Haiphong 16
Padova 16
Atlanta 14
Chennai 14
Cotonou 14
São Paulo 14
Guangzhou 13
London 12
Bengaluru 11
Council Bluffs 11
Milan 11
Nanjing 11
Tokyo 11
Amsterdam 10
Baghdad 10
Chicago 10
Da Nang 10
Managua 10
Andorra la Vella 9
Buffalo 9
Dublin 9
Hsinchu 9
Hwaseong-si 9
Warsaw 9
Dakar 8
Dallas 8
Montreal 8
Rome 8
San José 8
Tianjin 8
Vienna 8
Amman 7
Bishkek 7
Changsha 7
Denver 7
Frankfurt am Main 7
Hefei 7
Kuala Lumpur 7
Libreville 7
Luanda 7
Minsk 7
Panama City 7
Tallinn 7
Toronto 7
Zagreb 7
Asunción 6
Basel 6
Boston 6
Cagliari 6
Cayenne 6
Falkenstein 6
Gothenburg 6
Johannesburg 6
Lahore 6
Lilongwe 6
Nouakchott 6
Philadelphia 6
Phnom Penh 6
Phoenix 6
Praia 6
Tashkent 6
Turku 6
Antananarivo 5
Belgrade 5
Bridgetown 5
Castries 5
Dar es Salaam 5
Dushanbe 5
Jeddah 5
Kingston 5
Totale 3.241
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Nome #
Characterization and Study of Reliability Aspects in GaN High ElectronMobility Transistors 287
The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors 256
Degradation physics of GaN-based lateral and vertical devices 247
Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment 242
Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs 233
High breakdown voltage and low buffer trapping in superlattice gan-on-silicon heterostructures for high voltage applications 222
Reliability and failure analysis in power GaN-HEMTs: An overview 220
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs 219
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift 201
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 197
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs 195
Low On-Resistance and Low Trapping Effects in 1200 V Superlattice GaN-on-Silicon Heterostructures 195
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 188
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors 187
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 184
Vertical breakdown of GaN on Si due to V-pits 183
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors 181
Trapping phenomena and degradation mechanisms in GaN-based power HEMTs 180
Intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices : An industry perspective 176
Gallium Nitride power devices: challenges and perspectives 153
Total Suppression of Dynamic-Ron in AlGaN/GaN-HEMTs Through Proton Irradiation 143
Recent Advancements in Power GaN Reliability 143
Challenges towards highly reliable GaN power transistors 137
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic Ron 134
Instability of the breakdown voltage and leakage current in GaAs pseudomorphic HEMTs 109
High voltage GaN on si with low trapping up to 1200V 104
Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V 103
Towards low-trapping GaN-on-silicon material system for 1200 V applications 101
Totale 5.120
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Categoria #
all - tutte 14.999
article - articoli 5.441
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 20.440
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022329 0 48 65 21 13 6 13 33 15 6 21 88
2022/2023314 45 11 11 31 62 32 2 41 39 2 26 12
2023/2024192 12 12 22 9 8 43 12 23 8 6 20 17
2024/2025722 6 29 14 40 94 52 18 95 60 21 128 165
2025/20262.529 160 187 269 356 253 103 437 229 258 159 90 28
2026/202770 65 5 0 0 0 0 0 0 0 0 0 0
Totale 5.120