TAJALLI, ALALEH
 Distribuzione geografica
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Continente #
NA - Nord America 1.829
AS - Asia 692
EU - Europa 554
AF - Africa 202
SA - Sud America 105
OC - Oceania 16
Continente sconosciuto - Info sul continente non disponibili 11
Totale 3.409
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Nazione #
US - Stati Uniti d'America 1.726
SG - Singapore 220
CN - Cina 141
IT - Italia 102
HK - Hong Kong 100
PL - Polonia 62
BR - Brasile 51
DE - Germania 50
SE - Svezia 31
FI - Finlandia 30
CI - Costa d'Avorio 28
IN - India 25
VN - Vietnam 24
CH - Svizzera 22
GB - Regno Unito 22
NL - Olanda 22
FR - Francia 18
TW - Taiwan 18
UA - Ucraina 16
RU - Federazione Russa 15
KR - Corea 14
AT - Austria 13
CA - Canada 12
IE - Irlanda 11
MY - Malesia 11
NI - Nicaragua 10
AD - Andorra 9
BE - Belgio 9
IQ - Iraq 9
PK - Pakistan 9
BY - Bielorussia 8
EC - Ecuador 8
EE - Estonia 8
JM - Giamaica 8
JP - Giappone 8
KG - Kirghizistan 8
SK - Slovacchia (Repubblica Slovacca) 8
TR - Turchia 8
AO - Angola 7
CG - Congo 7
CR - Costa Rica 7
DZ - Algeria 7
GM - Gambi 7
LY - Libia 7
MW - Malawi 7
NP - Nepal 7
RS - Serbia 7
SN - Senegal 7
VE - Venezuela 7
AR - Argentina 6
BG - Bulgaria 6
CL - Cile 6
CV - Capo Verde 6
DK - Danimarca 6
DO - Repubblica Dominicana 6
GA - Gabon 6
GF - Guiana Francese 6
HR - Croazia 6
HU - Ungheria 6
MD - Moldavia 6
MG - Madagascar 6
MR - Mauritania 6
PA - Panama 6
PS - Palestinian Territory 6
PT - Portogallo 6
PY - Paraguay 6
RE - Reunion 6
RO - Romania 6
TZ - Tanzania 6
YE - Yemen 6
ZA - Sudafrica 6
AL - Albania 5
BB - Barbados 5
BF - Burkina Faso 5
CW - ???statistics.table.value.countryCode.CW??? 5
CY - Cipro 5
CZ - Repubblica Ceca 5
DJ - Gibuti 5
ES - Italia 5
GN - Guinea 5
GR - Grecia 5
IL - Israele 5
IR - Iran 5
IS - Islanda 5
KE - Kenya 5
KH - Cambogia 5
KZ - Kazakistan 5
LC - Santa Lucia 5
MK - Macedonia 5
MX - Messico 5
SA - Arabia Saudita 5
SD - Sudan 5
SO - Somalia 5
TH - Thailandia 5
TJ - Tagikistan 5
UY - Uruguay 5
UZ - Uzbekistan 5
YT - Mayotte 5
AE - Emirati Arabi Uniti 4
BZ - Belize 4
Totale 3.246
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Città #
Fairfield 252
Ashburn 206
Woodbridge 142
Singapore 136
Chandler 128
Cambridge 117
Seattle 110
Hong Kong 97
Houston 96
Santa Clara 91
Ann Arbor 64
Wilmington 57
Bytom 54
Beijing 53
Boardman 42
Leesburg 33
Abidjan 28
Medford 28
Princeton 28
Des Moines 27
Munich 22
San Diego 22
Helsinki 19
New York 18
Los Angeles 16
Padova 16
Ho Chi Minh City 12
Managua 10
Nanjing 10
Andorra la Vella 9
Council Bluffs 9
Dublin 9
Hsinchu 9
Hwaseong-si 9
Milan 9
London 8
São Paulo 8
Vienna 8
Amsterdam 7
Bishkek 7
Dakar 7
Hefei 7
Kuala Lumpur 7
Tallinn 7
Basel 6
Cagliari 6
Cayenne 6
Falkenstein 6
Gothenburg 6
Guangzhou 6
Libreville 6
Lilongwe 6
Luanda 6
Minsk 6
Nouakchott 6
Panama City 6
Turku 6
Zagreb 6
Asunción 5
Bridgetown 5
Buffalo 5
Castries 5
Changsha 5
Chicago 5
Dallas 5
Dar es Salaam 5
Dushanbe 5
Kingston 5
Phnom Penh 5
Purmerend 5
San José 5
Taipei 5
Tashkent 5
Warsaw 5
Amman 4
Antananarivo 4
Apia 4
Belgrade 4
Bulle 4
Conakry 4
Copenhagen 4
Djibouti 4
Guiyang 4
Harare 4
Hebei 4
Jinan 4
Johannesburg 4
Kingstown 4
Limassol 4
Mamoudzou 4
Montreal 4
Nairobi 4
Nuremberg 4
Patna 4
Phoenix 4
Ranchi 4
Redmond 4
Seoul 4
Shenyang 4
Skopje 4
Totale 2.322
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Nome #
Degradation physics of GaN-based lateral and vertical devices 189
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs 180
Characterization and Study of Reliability Aspects in GaN High ElectronMobility Transistors 175
The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors 166
Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs 164
Reliability and failure analysis in power GaN-HEMTs: An overview 154
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors 143
Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment 142
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift 138
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs 138
Low On-Resistance and Low Trapping Effects in 1200 V Superlattice GaN-on-Silicon Heterostructures 136
Intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices : An industry perspective 129
Trapping phenomena and degradation mechanisms in GaN-based power HEMTs 129
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors 126
Vertical breakdown of GaN on Si due to V-pits 122
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic Ron 119
Total Suppression of Dynamic-Ron in AlGaN/GaN-HEMTs Through Proton Irradiation 118
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 114
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 109
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 107
High breakdown voltage and low buffer trapping in superlattice gan-on-silicon heterostructures for high voltage applications 106
Recent Advancements in Power GaN Reliability 97
Gallium Nitride power devices: challenges and perspectives 94
Challenges towards highly reliable GaN power transistors 87
Instability of the breakdown voltage and leakage current in GaAs pseudomorphic HEMTs 81
Towards low-trapping GaN-on-silicon material system for 1200 V applications 62
Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V 61
High voltage GaN on si with low trapping up to 1200V 56
Totale 3.442
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Categoria #
all - tutte 11.453
article - articoli 4.152
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 15.605
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021287 0 0 0 8 7 4 48 115 21 31 38 15
2021/2022338 9 48 65 21 13 6 13 33 15 6 21 88
2022/2023314 45 11 11 31 62 32 2 41 39 2 26 12
2023/2024192 12 12 22 9 8 43 12 23 8 6 20 17
2024/2025722 6 29 14 40 94 52 18 95 60 21 128 165
2025/2026921 160 187 269 305 0 0 0 0 0 0 0 0
Totale 3.442