TAJALLI, ALALEH
 Distribuzione geografica
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Continente #
NA - Nord America 2.103
AS - Asia 972
EU - Europa 591
AF - Africa 228
SA - Sud America 127
OC - Oceania 16
Continente sconosciuto - Info sul continente non disponibili 13
Totale 4.050
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Nazione #
US - Stati Uniti d'America 1.985
SG - Singapore 350
CN - Cina 186
HK - Hong Kong 142
IT - Italia 102
PL - Polonia 66
BR - Brasile 62
VN - Vietnam 60
DE - Germania 52
IN - India 32
SE - Svezia 32
FI - Finlandia 30
CI - Costa d'Avorio 29
FR - Francia 27
GB - Regno Unito 27
NL - Olanda 23
CH - Svizzera 22
RU - Federazione Russa 18
TW - Taiwan 18
UA - Ucraina 16
BJ - Benin 15
CA - Canada 15
KR - Corea 14
AT - Austria 13
IQ - Iraq 12
IE - Irlanda 11
MY - Malesia 11
ES - Italia 10
JP - Giappone 10
MX - Messico 10
NI - Nicaragua 10
PK - Pakistan 10
AD - Andorra 9
BE - Belgio 9
BY - Bielorussia 9
CV - Capo Verde 9
EC - Ecuador 9
TR - Turchia 9
ZA - Sudafrica 9
AR - Argentina 8
EE - Estonia 8
JM - Giamaica 8
KG - Kirghizistan 8
SK - Slovacchia (Repubblica Slovacca) 8
VE - Venezuela 8
AO - Angola 7
BG - Bulgaria 7
CG - Congo 7
CL - Cile 7
CR - Costa Rica 7
DO - Repubblica Dominicana 7
DZ - Algeria 7
GA - Gabon 7
GF - Guiana Francese 7
GM - Gambi 7
HR - Croazia 7
LY - Libia 7
MG - Madagascar 7
MW - Malawi 7
NP - Nepal 7
PA - Panama 7
PY - Paraguay 7
RS - Serbia 7
SA - Arabia Saudita 7
SN - Senegal 7
AL - Albania 6
BD - Bangladesh 6
CW - ???statistics.table.value.countryCode.CW??? 6
CY - Cipro 6
CZ - Repubblica Ceca 6
DK - Danimarca 6
GR - Grecia 6
HU - Ungheria 6
IL - Israele 6
KH - Cambogia 6
KZ - Kazakistan 6
MD - Moldavia 6
MR - Mauritania 6
PS - Palestinian Territory 6
PT - Portogallo 6
RE - Reunion 6
RO - Romania 6
TZ - Tanzania 6
UY - Uruguay 6
YE - Yemen 6
YT - Mayotte 6
AE - Emirati Arabi Uniti 5
BB - Barbados 5
BF - Burkina Faso 5
CO - Colombia 5
DJ - Gibuti 5
GN - Guinea 5
GP - Guadalupe 5
IR - Iran 5
IS - Islanda 5
KE - Kenya 5
LC - Santa Lucia 5
MK - Macedonia 5
PH - Filippine 5
SD - Sudan 5
Totale 3.867
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Città #
Ashburn 266
Fairfield 252
Singapore 177
Woodbridge 142
Hong Kong 135
Chandler 128
Cambridge 117
Seattle 111
Houston 98
San Jose 94
Santa Clara 91
Beijing 67
Ann Arbor 64
Wilmington 57
Bytom 54
Boardman 42
Leesburg 33
Ho Chi Minh City 30
Los Angeles 30
Abidjan 29
Medford 28
Princeton 28
Des Moines 27
New York 27
Munich 22
San Diego 22
Helsinki 19
Padova 16
Cotonou 14
Orem 14
São Paulo 12
London 10
Managua 10
Nanjing 10
Andorra la Vella 9
Council Bluffs 9
Dublin 9
Hsinchu 9
Hwaseong-si 9
Milan 9
Warsaw 9
Haiphong 8
Lauterbourg 8
Vienna 8
Amsterdam 7
Bishkek 7
Chennai 7
Dakar 7
Denver 7
Hefei 7
Kuala Lumpur 7
Libreville 7
Minsk 7
Panama City 7
Tallinn 7
Zagreb 7
Asunción 6
Atlanta 6
Basel 6
Buffalo 6
Cagliari 6
Cayenne 6
Changsha 6
Chicago 6
Falkenstein 6
Gothenburg 6
Guangzhou 6
Johannesburg 6
Lilongwe 6
Luanda 6
Montreal 6
Nouakchott 6
Phnom Penh 6
Praia 6
Turku 6
Antananarivo 5
Baghdad 5
Boston 5
Bridgetown 5
Castries 5
Dallas 5
Dar es Salaam 5
Dushanbe 5
Kingston 5
Kingstown 5
Limassol 5
Phoenix 5
Purmerend 5
San José 5
Stockholm 5
Taipei 5
Tashkent 5
Amman 4
Apia 4
Belgrade 4
Bulle 4
Conakry 4
Copenhagen 4
Djibouti 4
Guiyang 4
Totale 2.678
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Nome #
Degradation physics of GaN-based lateral and vertical devices 216
Characterization and Study of Reliability Aspects in GaN High ElectronMobility Transistors 210
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs 201
Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs 192
Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment 190
The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors 185
Reliability and failure analysis in power GaN-HEMTs: An overview 173
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs 163
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors 162
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift 161
Low On-Resistance and Low Trapping Effects in 1200 V Superlattice GaN-on-Silicon Heterostructures 157
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 153
High breakdown voltage and low buffer trapping in superlattice gan-on-silicon heterostructures for high voltage applications 153
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors 149
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 147
Trapping phenomena and degradation mechanisms in GaN-based power HEMTs 145
Intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices : An industry perspective 143
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 142
Vertical breakdown of GaN on Si due to V-pits 140
Total Suppression of Dynamic-Ron in AlGaN/GaN-HEMTs Through Proton Irradiation 123
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic Ron 121
Gallium Nitride power devices: challenges and perspectives 117
Recent Advancements in Power GaN Reliability 113
Challenges towards highly reliable GaN power transistors 110
Instability of the breakdown voltage and leakage current in GaAs pseudomorphic HEMTs 87
Towards low-trapping GaN-on-silicon material system for 1200 V applications 79
Superlattice GaN-on-silicon heterostructures with low trapping in 1200 V 77
High voltage GaN on si with low trapping up to 1200V 74
Totale 4.083
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Categoria #
all - tutte 12.567
article - articoli 4.537
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 17.104
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021268 0 0 0 0 0 0 48 115 21 31 38 15
2021/2022338 9 48 65 21 13 6 13 33 15 6 21 88
2022/2023314 45 11 11 31 62 32 2 41 39 2 26 12
2023/2024192 12 12 22 9 8 43 12 23 8 6 20 17
2024/2025722 6 29 14 40 94 52 18 95 60 21 128 165
2025/20261.562 160 187 269 356 253 103 234 0 0 0 0 0
Totale 4.083