DRIGO, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 7.530
EU - Europa 718
AS - Asia 564
Continente sconosciuto - Info sul continente non disponibili 3
SA - Sud America 1
Totale 8.816
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Nazione #
US - Stati Uniti d'America 7.526
CN - Cina 309
FI - Finlandia 172
SG - Singapore 155
UA - Ucraina 132
DE - Germania 118
SE - Svezia 108
FR - Francia 66
IN - India 63
IT - Italia 60
GB - Regno Unito 48
VN - Vietnam 30
IE - Irlanda 7
CA - Canada 4
RU - Federazione Russa 4
EU - Europa 3
IR - Iran 2
JP - Giappone 2
UZ - Uzbekistan 2
BG - Bulgaria 1
CL - Cile 1
ES - Italia 1
NO - Norvegia 1
TR - Turchia 1
Totale 8.816
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Città #
Fairfield 1.209
Woodbridge 1.061
Houston 715
Ann Arbor 707
Jacksonville 612
Ashburn 488
Chandler 457
Seattle 452
Wilmington 439
Cambridge 362
Princeton 211
San Diego 125
Singapore 124
Beijing 101
Nanjing 63
Helsinki 58
Boardman 48
Des Moines 40
Medford 38
Dong Ket 30
Shenyang 27
Hebei 25
Guangzhou 24
Pune 17
Santa Clara 17
Jiaxing 16
Falls Church 14
London 14
Roxbury 14
Nanchang 13
Norwalk 13
Changsha 11
Tianjin 11
Mestre 9
Dallas 8
Padova 8
Milan 7
Dublin 6
Indiana 6
Jinan 6
Kharkiv 6
Ogden 6
Venice 6
Borås 5
Gorizia 5
New York 5
Kilburn 4
Las Vegas 4
Shanghai 4
Chicago 3
Genoa 3
Los Angeles 3
Orange 3
Redwood City 3
Acton 2
Ardabil 2
Buffalo 2
Castenaso 2
Chiswick 2
Munich 2
New Bedfont 2
Prescot 2
Rockville 2
San Francisco 2
Siena 2
Tappahannock 2
Tashkent 2
Tokyo 2
Walnut 2
Washington 2
Auburn Hills 1
Berlin 1
Christchurch 1
Fuzhou 1
Gatchina 1
Hangzhou 1
Hendon 1
High Wycombe 1
Leawood 1
Lequile 1
Madrid 1
Miami Beach 1
Milton Keynes 1
Ningbo 1
Omsk 1
Ottawa 1
Regina 1
Rome 1
Santiago 1
Serra 1
Sligo 1
Sofia 1
Tampere 1
Trento 1
Turin 1
Wandsworth 1
Yellow Springs 1
Zhengzhou 1
Totale 7.726
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Nome #
Ion-beam analysis of mismatched epitaxial heterostructures 148
Investigation of strain relaxation mechanisms in InGaAs/GaAs single layer films 147
Structural study of (100)CdTe epilayers grown by MOVPE on ZnTe buffered and unbuffered (100)GaAs 138
Mechanisms of strain relaxation in III-V semiconductor heterostructures 131
Optimization of the structural and optical properties of ZnS epilayers grown on (100)GaAs by MOVPE 130
Inhomogeneous strain relaxation and defect distribution of ZnTe layers deposited on (100)GaAs by metalorganic vapor-phase epitaxy 129
Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100)GaAs by metalorganic vapor phase epitaxy 128
Strong deviation of the lattice parameter in Si1-x-yGexCy epilayers from Vegard's rule 125
Dechanneling cross-section for misfit dislocations 120
Dechanneling by misfit dislocations in III-V semiconductor heterostructures 116
Structural characterization and surface lattice strain determination of ZnS/GaAs heterostructures grown by metalorganic vapour phase epitaxy 112
Zn0.85Cd0.15Se active layers on graded-composition InxGa1-xAs buffer layers 110
12C(α,α)12C resonant elastic scattering at 5.7 MeV as a tool for carbon quantification in silicon-based heterostructures 109
Photocurrent spectroscopy of GaN and AlGaN epilayers grown on 6H (0001) silicon carbide 108
Surface and interface analysis of titanium nitride diffusion barriers 107
Determination of surface lattice strain in ZnTe epilayers on (100)GaAs by ion channeling and reflectance spectroscopy 105
Lattice curvature generation in graded InxGa1-xAs/GaAs buffer layers 102
Computation of the strain field generated by dislocations with a position-dependent Burgers' vector distribution 101
Mechanisms of strain release in molecular-beam epitaxy-grown InGaAs/GaAs buffer heterostructures 100
Crack formation in tensile InGaAS/InP layers 99
Lattice Strain Analysis of VPE-Grown ZnS Epitaxial Layers on (001) GaAs by RBS - Channeling and High Resolution XRD Measurements 99
Lattice curvature of InxGa1-xAs/GaAs [001] graded buffer layers 98
Determination of lattice parameter and of N lattice location in InxGa1-xNyAs1-y/GaAs and GaNyAs1-y/GaAs epilayers 98
Electron and ion-beam analysis of composition and strain in Si1-xGex Si heterostructures 97
Transformation To Amorphous State of Metals By Ion-implantation - P In Ni 97
Transition from island to continuous InP layer growth on (001)GaAs by MOCVD 96
Matrix Atomic Losses and Oxygen Incorporation Under Ruby-laser Irradiation of Silicon In Gaseous Atmospheres 95
Continuously graded buffers for InGaAs/GaAs structures grown on GaAs 94
Structural study of the influence of different growth parameters on the quality of InxGa1-xN/GaN films grown by MOCVD 94
Two-dimensional interstitial diffusion in silicon monitored by scanning capacitance microscopy 94
Self Annealing Effects In P+ Implanted Silicon 94
Ion channeling Rutherford backscattering spectrometry structural characterization of CdS/CdTe heterostructures 91
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy 91
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain 91
Lattice-matched Zn1-yCdySe/InxGa1-xAs(001) heterostructures 91
Explosive Crystallization of Dilute Amorphous Si-ge Alloys 90
Nitrogen-induced hindering of In incorporation in InGaAsN 89
Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection 87
Measurement of aluminum concentration in the Ga1-xAlxSb/GaSb epitaxial system 87
Structural and electronic properties of wide band gap Zn1-xMgxSe alloys 86
Lattice strain relaxation of ZnS layers grown by vapor-phase epitaxy on (100)GaAs 84
Static and dynamic screening of the polarization fields in nitride nanostructures: a theoretical and experimental study 84
Matrix effects in SIMS depth profiles of SiGe relaxed buffer layers 83
Strain relaxation in graded composition InxGa1-xAs/GaAs buffer layers 83
Correlation between defects, residual strain and morphology in continuously graded InGaAs/GaAs buffers 82
Local lattice distortion in Si1-x-yGexCy epitaxial layers from x-ray absorption fine structure 81
Mechanism of Ion Induced Amorphization 81
Selective ion-channeling study of misfit dislocation grids in semiconductor heterostructures: theory and experiments 80
Diffusion and clustering of supersaturated carbon in SiGeC layers under oxidation 80
Lattice parameter in Si1-yCy epilayers: deviation from Vegard's rule 80
Dissolution kinetics of boron-interstitial clusters in silicon 79
Investigation by synchrotron radiation X-ray topography of lattice tilt formation in partially released InGaAs/GaAs compositionally graded layers 79
Stranski-Krastanow MOVPE growth of nanoscale ZnTe islands on (0 0 1)GaAs 78
Direct observation of two-dimensional diffusion of the self-interstitials in crystalline Si 78
Dose-rate Effects On the Dynamic Annealing Mechanism In P+-implanted Silicon 77
Local structure in semiconductor superlattices and epilayers 76
Metastability of Si1-yCy epilayers under 2 MeV alpha particle irradiation 76
Structural characterization techniques for the analysis of semiconductor strained heterostructures 76
12C(a,a)12C resonant elastic scattering at 5.72 MeV as a tool for carbon quantification in Silicon-based heterostructures 76
Strain effect on interatomic distances in InGaAs/InP epitaxial layers 75
'Experimental Evidence of 2D-3D transition in the Stranski-Krastanow coherent growth' 74
Influence of the N2/H2 ratio on the structural features of InxGa1-xN/GaN films grown by MOCVD 74
On the Dynamic Annealing Mechanism In P+-implanted Silicon 74
Lattice parameter of Si1-x-yGexCy alloys 73
Composition and structure of Si-Ge layers produced by ion implantation and laser melting 73
Silicon Loss During Tisi2 Formation 72
On the Mechanisms of Strain Release In Molecular-beam-epitaxy-grown Inxga1-xas/gaas Single Heterostructures 71
Assessment of Vegard's law validity in the Ga1-xAlxSb/GaSb epitaxial System 71
Hydrogen-nitrogen complexes in dilute nitride alloys: origin of the compressive strain 70
Titanium silicide formation: Effect of oxygen distribution in the metal film 70
Structural and analytical characterization of Si(1-x)Gex/Si heterosturcures by Rutherford backscattering spectrometry and channeling and double-crystal X-ray-diffractometry 70
Electronic structure and morphology of SiC films grown on Si(111) using C-60 as a precursor 70
High precision structural measurements on thin epitaxial layers by means of ion-channeling 69
Carbon diffusion and clustering in SiGeC layers under thermal oxidation 69
Elastic Distortion Field In Single Layer Heterostructures In the Presence of Misfit Dislocations 68
Suppression of boron transient enhanced diffusion by C trapping 67
Deep blue emitting ZnS/ZnSe multiple quantum well laser grown by MOVPE on (100)GaAs 66
Interaction between self-interstitials and substitutional C in silicon: Interstitial trapping and C clustering mechanism 65
A systematic investigation of strain relaxation, surface morphology and defects in tensile and compressive InGaAs/InP layers 65
Bond lenght variation in In0.25Ga0.75As/InP epitaxial layers thicker than the critical thickness 64
Self-organized growth of ZnTe nanoscale islands on 001 GaAs 64
Modeling of self-interstitial diffusion in implanted molecular beam epitaxy silicon 63
Transient Annealing As A Tool For the Investigation of Thin-film Substrate Solid-phase Reactions 63
Behaviour of metastable Si/sub 1 y/C/sub y/ epilayers under 2 MeV alpha particles irradiation 62
New insight on the interaction and diffusion properties of ion beam injected self-interstitials in crystalline silicon 62
Transmission electron microscopy, high-resolution X-ray diffraction and Rutherford backscattering study of strain release in InGaAs/GaAs buffer layers 61
Influence of As incorporation on the deviation from Vegard's law in the AlxGa1-xSb/GaSb system 60
Broad-area optical characterization of well-width homogeneity inGaN/AlxGa1-xN multiple quantum wells grown on sapphire wafers 58
TEM and X-ray diffraction studies of III-V lattice mismatched multilayers and superlattices 57
Lattice Stress and Electrically Active Defects Induced By Ion Channeling In the Initial Layers of Iii-v Compounds 56
Anomalous low-temperature dopant diffusivity and defect structure in Sb-implanted and Sb/B-implanted annealed silicon samples 56
MOVPE growth of wide band-gap II-VI compounds for near-UV and deep-blue light emitting devices 56
Lattice strain and composition of boron-interstitial clusters in crystalline silicon 55
Lattice distortion in InxGa1-xAs/InP epitaxial films: a second- and third-shell XAFS study 54
Charge storage and screening of the internal field in GaN/AlGaN quantum wells 54
The thermal corrosion of ion-implanted zirconium 54
Native extended defects in Zn1-yGdySe/InxGa1-xAs heterostructures 53
Optical and transport properties of GaN/Al0.15Ga0.85N quantum wells 53
Self interstitials diffusion and clustering with impurities in crystalline silicon 52
Experimental evidence of two-dimensional-three-dimensional transition in the Stranski-Krastanow coherent growth 50
Totale 8.350
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Categoria #
all - tutte 30.358
article - articoli 27.771
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 58.129
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.593 0 0 35 104 184 162 168 254 220 202 156 108
2020/20211.464 66 132 36 105 103 194 48 129 267 90 195 99
2021/20221.342 37 138 225 78 72 123 48 140 88 43 167 183
2022/2023970 206 75 10 120 185 144 0 72 106 3 40 9
2023/2024358 20 75 26 34 14 29 18 11 16 18 56 41
2024/2025192 3 117 72 0 0 0 0 0 0 0 0 0
Totale 8.841