DRIGO, ANTONIO
 Distribuzione geografica
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Continente #
NA - Nord America 7.810
EU - Europa 803
AS - Asia 696
SA - Sud America 5
Continente sconosciuto - Info sul continente non disponibili 3
Totale 9.317
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Nazione #
US - Stati Uniti d'America 7.803
CN - Cina 349
SG - Singapore 221
FI - Finlandia 177
DE - Germania 134
UA - Ucraina 132
SE - Svezia 108
IT - Italia 76
FR - Francia 66
IN - India 63
GB - Regno Unito 48
RU - Federazione Russa 47
VN - Vietnam 30
HK - Hong Kong 23
IE - Irlanda 8
CA - Canada 5
BR - Brasile 4
EU - Europa 3
AT - Austria 2
ES - Italia 2
IR - Iran 2
JP - Giappone 2
KR - Corea 2
MX - Messico 2
UZ - Uzbekistan 2
BG - Bulgaria 1
CL - Cile 1
IQ - Iraq 1
NL - Olanda 1
NO - Norvegia 1
TR - Turchia 1
Totale 9.317
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Città #
Fairfield 1.209
Woodbridge 1.061
Houston 715
Ann Arbor 707
Jacksonville 612
Ashburn 488
Chandler 457
Seattle 452
Wilmington 439
Cambridge 362
Princeton 211
Singapore 173
Boardman 161
Santa Clara 128
San Diego 125
Beijing 101
Helsinki 63
Nanjing 63
Des Moines 40
Medford 38
Dong Ket 30
Shenyang 29
Guangzhou 25
Hebei 25
Hong Kong 23
Pune 17
Jiaxing 16
Falls Church 14
London 14
Roxbury 14
Nanchang 13
Norwalk 13
Changsha 11
Tianjin 11
Milan 10
Padova 10
Mestre 9
Council Bluffs 8
Dallas 8
Dublin 7
Indiana 6
Jinan 6
Kharkiv 6
Ogden 6
Venice 6
Borås 5
Gorizia 5
New York 5
Kilburn 4
Las Vegas 4
Shanghai 4
Turin 4
Chicago 3
Genoa 3
Los Angeles 3
Orange 3
Redwood City 3
Rome 3
Acton 2
Ardabil 2
Buffalo 2
Castenaso 2
Chiswick 2
Fuzhou 2
Gangnam-gu 2
Mexico City 2
Munich 2
New Bedfont 2
Nuremberg 2
Prescot 2
Rockville 2
Salerno 2
San Francisco 2
Siena 2
Tappahannock 2
Tashkent 2
Tokyo 2
Walnut 2
Washington 2
Auburn Hills 1
Baghdad 1
Berlin 1
Boston 1
Christchurch 1
Gatchina 1
Hangzhou 1
Hendon 1
High Wycombe 1
Izhevsk 1
Lanzhou 1
Leawood 1
Lequile 1
Lianyun 1
Luoyang 1
Madrid 1
Miami Beach 1
Milton Keynes 1
Nanning 1
Ningbo 1
Omsk 1
Totale 8.054
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Nome #
Ion-beam analysis of mismatched epitaxial heterostructures 151
Investigation of strain relaxation mechanisms in InGaAs/GaAs single layer films 149
Structural study of (100)CdTe epilayers grown by MOVPE on ZnTe buffered and unbuffered (100)GaAs 142
Mechanisms of strain relaxation in III-V semiconductor heterostructures 135
Inhomogeneous strain relaxation and defect distribution of ZnTe layers deposited on (100)GaAs by metalorganic vapor-phase epitaxy 134
Influence of a ZnTe buffer layer on the structural quality of CdTe epilayers grown on (100)GaAs by metalorganic vapor phase epitaxy 133
Optimization of the structural and optical properties of ZnS epilayers grown on (100)GaAs by MOVPE 132
Strong deviation of the lattice parameter in Si1-x-yGexCy epilayers from Vegard's rule 127
Dechanneling cross-section for misfit dislocations 122
Dechanneling by misfit dislocations in III-V semiconductor heterostructures 120
12C(α,α)12C resonant elastic scattering at 5.7 MeV as a tool for carbon quantification in silicon-based heterostructures 119
Zn0.85Cd0.15Se active layers on graded-composition InxGa1-xAs buffer layers 115
Structural characterization and surface lattice strain determination of ZnS/GaAs heterostructures grown by metalorganic vapour phase epitaxy 114
Photocurrent spectroscopy of GaN and AlGaN epilayers grown on 6H (0001) silicon carbide 112
Surface and interface analysis of titanium nitride diffusion barriers 110
Determination of surface lattice strain in ZnTe epilayers on (100)GaAs by ion channeling and reflectance spectroscopy 110
Crack formation in tensile InGaAS/InP layers 108
Determination of lattice parameter and of N lattice location in InxGa1-xNyAs1-y/GaAs and GaNyAs1-y/GaAs epilayers 108
Lattice curvature generation in graded InxGa1-xAs/GaAs buffer layers 106
Computation of the strain field generated by dislocations with a position-dependent Burgers' vector distribution 105
Mechanisms of strain release in molecular-beam epitaxy-grown InGaAs/GaAs buffer heterostructures 104
Lattice Strain Analysis of VPE-Grown ZnS Epitaxial Layers on (001) GaAs by RBS - Channeling and High Resolution XRD Measurements 102
Lattice curvature of InxGa1-xAs/GaAs [001] graded buffer layers 100
Electron and ion-beam analysis of composition and strain in Si1-xGex Si heterostructures 100
Continuously graded buffers for InGaAs/GaAs structures grown on GaAs 99
Matrix Atomic Losses and Oxygen Incorporation Under Ruby-laser Irradiation of Silicon In Gaseous Atmospheres 99
Transformation To Amorphous State of Metals By Ion-implantation - P In Ni 99
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain 98
Transition from island to continuous InP layer growth on (001)GaAs by MOCVD 98
Ion channeling Rutherford backscattering spectrometry structural characterization of CdS/CdTe heterostructures 97
Structural study of the influence of different growth parameters on the quality of InxGa1-xN/GaN films grown by MOCVD 97
Two-dimensional interstitial diffusion in silicon monitored by scanning capacitance microscopy 97
Self Annealing Effects In P+ Implanted Silicon 96
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy 95
Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection 94
Lattice-matched Zn1-yCdySe/InxGa1-xAs(001) heterostructures 93
Explosive Crystallization of Dilute Amorphous Si-ge Alloys 92
Nitrogen-induced hindering of In incorporation in InGaAsN 92
Lattice strain relaxation of ZnS layers grown by vapor-phase epitaxy on (100)GaAs 90
Correlation between defects, residual strain and morphology in continuously graded InGaAs/GaAs buffers 90
Measurement of aluminum concentration in the Ga1-xAlxSb/GaSb epitaxial system 89
Structural and electronic properties of wide band gap Zn1-xMgxSe alloys 88
Selective ion-channeling study of misfit dislocation grids in semiconductor heterostructures: theory and experiments 87
Static and dynamic screening of the polarization fields in nitride nanostructures: a theoretical and experimental study 87
Matrix effects in SIMS depth profiles of SiGe relaxed buffer layers 86
'Experimental Evidence of 2D-3D transition in the Stranski-Krastanow coherent growth' 85
Strain relaxation in graded composition InxGa1-xAs/GaAs buffer layers 85
Diffusion and clustering of supersaturated carbon in SiGeC layers under oxidation 84
12C(a,a)12C resonant elastic scattering at 5.72 MeV as a tool for carbon quantification in Silicon-based heterostructures 84
Mechanism of Ion Induced Amorphization 84
Composition and structure of Si-Ge layers produced by ion implantation and laser melting 83
Local lattice distortion in Si1-x-yGexCy epitaxial layers from x-ray absorption fine structure 83
Lattice parameter in Si1-yCy epilayers: deviation from Vegard's rule 82
Dissolution kinetics of boron-interstitial clusters in silicon 81
Investigation by synchrotron radiation X-ray topography of lattice tilt formation in partially released InGaAs/GaAs compositionally graded layers 81
Structural characterization techniques for the analysis of semiconductor strained heterostructures 81
Assessment of Vegard's law validity in the Ga1-xAlxSb/GaSb epitaxial System 81
Stranski-Krastanow MOVPE growth of nanoscale ZnTe islands on (0 0 1)GaAs 80
Direct observation of two-dimensional diffusion of the self-interstitials in crystalline Si 80
Local structure in semiconductor superlattices and epilayers 79
Dose-rate Effects On the Dynamic Annealing Mechanism In P+-implanted Silicon 79
On the Dynamic Annealing Mechanism In P+-implanted Silicon 79
Strain effect on interatomic distances in InGaAs/InP epitaxial layers 78
Metastability of Si1-yCy epilayers under 2 MeV alpha particle irradiation 78
Electronic structure and morphology of SiC films grown on Si(111) using C-60 as a precursor 78
Bond lenght variation in In0.25Ga0.75As/InP epitaxial layers thicker than the critical thickness 76
Influence of the N2/H2 ratio on the structural features of InxGa1-xN/GaN films grown by MOCVD 76
Lattice parameter of Si1-x-yGexCy alloys 75
Silicon Loss During Tisi2 Formation 75
Carbon diffusion and clustering in SiGeC layers under thermal oxidation 75
On the Mechanisms of Strain Release In Molecular-beam-epitaxy-grown Inxga1-xas/gaas Single Heterostructures 74
Titanium silicide formation: Effect of oxygen distribution in the metal film 73
Hydrogen-nitrogen complexes in dilute nitride alloys: origin of the compressive strain 72
Structural and analytical characterization of Si(1-x)Gex/Si heterosturcures by Rutherford backscattering spectrometry and channeling and double-crystal X-ray-diffractometry 72
High precision structural measurements on thin epitaxial layers by means of ion-channeling 72
A systematic investigation of strain relaxation, surface morphology and defects in tensile and compressive InGaAs/InP layers 72
Elastic Distortion Field In Single Layer Heterostructures In the Presence of Misfit Dislocations 71
Transient Annealing As A Tool For the Investigation of Thin-film Substrate Solid-phase Reactions 70
Suppression of boron transient enhanced diffusion by C trapping 69
Deep blue emitting ZnS/ZnSe multiple quantum well laser grown by MOVPE on (100)GaAs 69
Interaction between self-interstitials and substitutional C in silicon: Interstitial trapping and C clustering mechanism 68
Behaviour of metastable Si/sub 1 y/C/sub y/ epilayers under 2 MeV alpha particles irradiation 68
Modeling of self-interstitial diffusion in implanted molecular beam epitaxy silicon 67
Self-organized growth of ZnTe nanoscale islands on 001 GaAs 67
Transmission electron microscopy, high-resolution X-ray diffraction and Rutherford backscattering study of strain release in InGaAs/GaAs buffer layers 67
Anomalous low-temperature dopant diffusivity and defect structure in Sb-implanted and Sb/B-implanted annealed silicon samples 66
Charge storage and screening of the internal field in GaN/AlGaN quantum wells 66
Broad-area optical characterization of well-width homogeneity inGaN/AlxGa1-xN multiple quantum wells grown on sapphire wafers 65
New insight on the interaction and diffusion properties of ion beam injected self-interstitials in crystalline silicon 65
Influence of As incorporation on the deviation from Vegard's law in the AlxGa1-xSb/GaSb system 63
TEM and X-ray diffraction studies of III-V lattice mismatched multilayers and superlattices 62
Lattice Stress and Electrically Active Defects Induced By Ion Channeling In the Initial Layers of Iii-v Compounds 60
MOVPE growth of wide band-gap II-VI compounds for near-UV and deep-blue light emitting devices 60
Lattice distortion in InxGa1-xAs/InP epitaxial films: a second- and third-shell XAFS study 58
Lattice strain and composition of boron-interstitial clusters in crystalline silicon 58
Optical and transport properties of GaN/Al0.15Ga0.85N quantum wells 57
Bond-length variation in InxGa1-xAs/InP strained epitaxial layers (vol 57, pg 14 619, 1998) 57
The thermal corrosion of ion-implanted zirconium 57
Self interstitials diffusion and clustering with impurities in crystalline silicon 56
Native extended defects in Zn1-yGdySe/InxGa1-xAs heterostructures 56
Totale 8.780
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Categoria #
all - tutte 34.617
article - articoli 31.530
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 66.147
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020940 0 0 0 0 0 0 0 254 220 202 156 108
2020/20211.464 66 132 36 105 103 194 48 129 267 90 195 99
2021/20221.342 37 138 225 78 72 123 48 140 88 43 167 183
2022/2023970 206 75 10 120 185 144 0 72 106 3 40 9
2023/2024358 20 75 26 34 14 29 18 11 16 18 56 41
2024/2025693 3 117 77 64 240 51 56 85 0 0 0 0
Totale 9.342