The optimisation of ZnSe/ZnS multi-quantum-wells grown by metal-organic vapour phase epitaxy (MOVPE) for lasers was carried out with the help of structural and electro optical characterisation techniques, Good-quality quantum wells were obtained using a lower growth temperature (315 degrees C) with respect to the ZnS buffer layer (342 degrees C). Although even the best samples contain a high density of microtwins crossing the active layer, the luminescence efficiency is quite good and the threshold for the stimulated emission at 10 K is as low as 170 kW cm(-2).
Deep blue emitting ZnS/ZnSe multiple quantum well laser grown by MOVPE on (100)GaAs
ROMANATO, FILIPPO;DRIGO, ANTONIO
1997
Abstract
The optimisation of ZnSe/ZnS multi-quantum-wells grown by metal-organic vapour phase epitaxy (MOVPE) for lasers was carried out with the help of structural and electro optical characterisation techniques, Good-quality quantum wells were obtained using a lower growth temperature (315 degrees C) with respect to the ZnS buffer layer (342 degrees C). Although even the best samples contain a high density of microtwins crossing the active layer, the luminescence efficiency is quite good and the threshold for the stimulated emission at 10 K is as low as 170 kW cm(-2).
File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
Deep blue emitting ZnSZnSe multiple quantum well lasers grown by MOVPE on 001 GaAs.pdf
accesso aperto
Tipologia:
Published (publisher's version)
Licenza:
Accesso gratuito
Dimensione
505.83 kB
Formato
Adobe PDF
|
505.83 kB | Adobe PDF | Visualizza/Apri |
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
