Thin film Si1-xGex alloys have been grown on silicon by molecular beam epitaxy with nominal composition, x, between 10 and 20 at %. These heterostructures have several applications in band-engineering and in the field of device structures. Film thicknesses, germanium atomic fractions and tetragonal distortion were determined by three different techniques, i.e. Rutherford Backscattering Spectrometry-Channeling, Analytical Electron Microscopy and Double Crystal X-ray Diffractometry. The good agreement found between the various analytical results demonstrates that each technique is capable of a high level of accuracy and consistency. These characterization methods are therefore powerful tools for the precise control of the epitaxial layer growth parameters for the fabbrication of different device structures.

Structural and analytical characterization of Si(1-x)Gex/Si heterosturcures by Rutherford backscattering spectrometry and channeling and double-crystal X-ray-diffractometry

DRIGO, ANTONIO;ROMANATO, FILIPPO;
1992

Abstract

Thin film Si1-xGex alloys have been grown on silicon by molecular beam epitaxy with nominal composition, x, between 10 and 20 at %. These heterostructures have several applications in band-engineering and in the field of device structures. Film thicknesses, germanium atomic fractions and tetragonal distortion were determined by three different techniques, i.e. Rutherford Backscattering Spectrometry-Channeling, Analytical Electron Microscopy and Double Crystal X-ray Diffractometry. The good agreement found between the various analytical results demonstrates that each technique is capable of a high level of accuracy and consistency. These characterization methods are therefore powerful tools for the precise control of the epitaxial layer growth parameters for the fabbrication of different device structures.
File in questo prodotto:
File Dimensione Formato  
structural and analytical characterization of SiGeSi hs by Rutherford backscattering spectrometry and channeling.pdf

accesso aperto

Tipologia: Published (publisher's version)
Licenza: Accesso gratuito
Dimensione 3.05 MB
Formato Adobe PDF
3.05 MB Adobe PDF Visualizza/Apri
Pubblicazioni consigliate

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/154143
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus ND
  • ???jsp.display-item.citation.isi??? 24
  • OpenAlex ND
social impact