We determined the properties of Zn1-xMgxSe semiconductor alloys through a combination of optical and photoelectron spectroscopy, x-ray diffraction, Rutherford backscattering spectrometry, and ab initio pseudopotential calculations. The complementary character of the techniques and the good agreement between calculated and experimental trends allowed us to explain some of the discrepancies between the reported properties of these wide band gap alloys.
Structural and electronic properties of wide band gap Zn1-xMgxSe alloys
DE SALVADOR, DAVIDE;BERTI, MARINA;DRIGO, ANTONIO;ROMANATO, FILIPPO
2004
Abstract
We determined the properties of Zn1-xMgxSe semiconductor alloys through a combination of optical and photoelectron spectroscopy, x-ray diffraction, Rutherford backscattering spectrometry, and ab initio pseudopotential calculations. The complementary character of the techniques and the good agreement between calculated and experimental trends allowed us to explain some of the discrepancies between the reported properties of these wide band gap alloys.
File in questo prodotto:
| File | Dimensione | Formato | |
|---|---|---|---|
|
structural and electronic properties of wide band gap Zn1-xMgxSe alloys.pdf
Accesso riservato
Tipologia:
Published (Publisher's Version of Record)
Licenza:
Accesso privato - non pubblico
Dimensione
356.53 kB
Formato
Adobe PDF
|
356.53 kB | Adobe PDF | Visualizza/Apri Richiedi una copia |
Pubblicazioni consigliate
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
