CELLERE, GIORGIO
 Distribuzione geografica
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Continente #
NA - Nord America 2.157
EU - Europa 178
AS - Asia 175
Continente sconosciuto - Info sul continente non disponibili 2
OC - Oceania 1
Totale 2.513
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Nazione #
US - Stati Uniti d'America 2.154
CN - Cina 85
SG - Singapore 79
DE - Germania 50
FI - Finlandia 29
IT - Italia 23
UA - Ucraina 16
GB - Regno Unito 14
RU - Federazione Russa 12
SE - Svezia 12
FR - Francia 11
IN - India 4
CA - Canada 3
IE - Irlanda 3
JP - Giappone 3
NL - Olanda 3
DK - Danimarca 2
EU - Europa 2
HK - Hong Kong 2
TW - Taiwan 2
AT - Austria 1
AU - Australia 1
IS - Islanda 1
MD - Moldavia 1
Totale 2.513
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Città #
Fairfield 327
Woodbridge 253
Houston 210
Ann Arbor 182
Ashburn 171
Chandler 130
Seattle 129
Wilmington 123
Cambridge 106
Jacksonville 76
Santa Clara 73
Singapore 60
Princeton 41
San Diego 40
Boardman 38
Roxbury 24
Des Moines 22
Nanjing 17
Los Angeles 16
Medford 15
Guangzhou 12
Munich 9
New York 8
Helsinki 7
Venice 6
Beijing 5
Jiaxing 5
London 5
Padova 5
Shenyang 5
Nanchang 4
Norwalk 4
Borås 3
Dublin 3
Hebei 3
Jinan 3
Parma 3
Redwood City 3
Shanghai 3
Daan 2
Hong Kong 2
Kilburn 2
Milan 2
Montreal 2
Nürnberg 2
Ogaya 2
Tappahannock 2
Zhengzhou 2
Amsterdam 1
Clifton 1
Edinburgh 1
Frankfurt am Main 1
Grezzago 1
Groningen 1
Hangzhou 1
Indiana 1
Keflavik 1
Kharkiv 1
Mestre 1
Moscow 1
Ogden 1
Prescot 1
Pune 1
Rockville 1
Scafati 1
Tianjin 1
Tokyo 1
Toronto 1
Totale 2.187
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Nome #
Destructive events in NAND Flash memories irradiated with heavy ions 143
Can Atmospheric Neutrons Induce Soft Errors in NAND Floating Gate Memories? 131
Error Instability in Floating Gate Flash Memories Exposed to TID 123
Angular dependence of heavy ion effects in Floating Gate memory arrays 120
Annealing of Heavy-Ion Induced Floating Gate Errors: LET and Feature Size Dependence 120
Increase in the Heavy-ion Upset Cross Section of Floating Gate Cells Previously Exposed to TID 120
Radiation Sensitivity of Ohmic RF-MEMS Switches for Spatial Applications 118
Key Contributions to the Cross Section of NAND Flash Memories Irradiated with Heavy Ions 113
Heavy-Ion Induced Threshold Voltage Tails in Floating Gate Arrays 109
TID sensitivity of NAND Flash memory building blocks 109
Radiation Effects in NAND Flash Memories 107
ELECTRICAL DETECTION AND EQUIVALENT MODEL OF SINGLE CELL OVER GOLD MICROELECTRODE BIOCHIP USED FOR CELL STIMULATION 102
Space and time-resolved gene expression experiments on cultured mammalian cells by a single-cell electroporation microarray 101
Impact of time and space evolution of ion tracks in nonvolatile memory cells approaching nanoscale 94
Impact of total dose on heavy-ion upsets in floating gate arrays 94
TID Sensitivity of NAND Flash Memory Building Blocks 91
Potential High Resolution Dosimeters For MRT 84
Influence of dielectric breakdown on MOSFET drain current 79
Depassivation of Latent Plasma Damage in n-MOSFETs 79
Plasma induced damage from via etching in pMOSFETs 78
Transfecting targeted adherent single cells 75
Catastrophic Failure in Highly Scaled Commercial NAND Flash Memories 73
Defect in thin and ultra-thin silicon dioxides 62
Radiation-induced depassivation of latent plasma damage 60
Dosimetry method for use in treatment of brain tumor, involves determining changes in threshold value of cells which are exposed to ionizing radiation by correlating address of cell to corresponding position in two-dimensional array 52
P2ID in a Modern CMOS Technology 50
RF-MEMS Switches Reliability for Long Term Spatial Applications 40
Totale 2.527
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Categoria #
all - tutte 9.625
article - articoli 6.489
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 171
selected - selezionate 0
volume - volumi 611
Totale 16.896
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020313 0 0 0 0 0 0 0 92 101 48 45 27
2020/2021333 33 37 28 39 15 22 6 40 33 28 43 9
2021/2022370 7 35 68 25 15 15 13 50 18 5 48 71
2022/2023278 43 28 8 31 46 47 0 21 38 0 16 0
2023/2024157 9 18 10 14 4 13 3 31 2 26 18 9
2024/2025231 2 27 16 34 101 25 10 16 0 0 0 0
Totale 2.527