In this paper, we present a study of micro breakdown (MB), soft breakdown (SB), and conventional hard breakdown (HB) on pMOSFET devices. In particular, we report evident damage due to via etching.
Plasma induced damage from via etching in pMOSFETs
CELLERE, GIORGIO;PACCAGNELLA, ALESSANDRO
2002
Abstract
In this paper, we present a study of micro breakdown (MB), soft breakdown (SB), and conventional hard breakdown (HB) on pMOSFET devices. In particular, we report evident damage due to via etching.
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