Plasma process induced damage has been widely investigated in the past few years. We present in this work results from a yearlong study intended to reduce plasma-induced damage in a modern CMOS technology, featuring ultra thin gate oxide. We studied both nMOSFETs and pMOSFETs with a physical gate oxide thickness of 3.5 nm.
P2ID in a Modern CMOS Technology
G. CELLERE;PACCAGNELLA, ALESSANDRO
2002
Abstract
Plasma process induced damage has been widely investigated in the past few years. We present in this work results from a yearlong study intended to reduce plasma-induced damage in a modern CMOS technology, featuring ultra thin gate oxide. We studied both nMOSFETs and pMOSFETs with a physical gate oxide thickness of 3.5 nm.
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