DANESIN, FRANCESCA
 Distribuzione geografica
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Continente #
NA - Nord America 1.953
EU - Europa 176
AS - Asia 170
SA - Sud America 1
Totale 2.300
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Nazione #
US - Stati Uniti d'America 1.953
CN - Cina 103
UA - Ucraina 40
FI - Finlandia 35
DE - Germania 34
SG - Singapore 27
GB - Regno Unito 17
IT - Italia 17
VN - Vietnam 16
TW - Taiwan 15
SE - Svezia 12
FR - Francia 7
RU - Federazione Russa 6
AT - Austria 3
NL - Olanda 3
IN - India 2
KR - Corea 2
SA - Arabia Saudita 2
BE - Belgio 1
BR - Brasile 1
HK - Hong Kong 1
IE - Irlanda 1
JP - Giappone 1
TR - Turchia 1
Totale 2.300
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Città #
Fairfield 245
Woodbridge 242
Jacksonville 217
Ann Arbor 199
Ashburn 166
Houston 121
Seattle 118
Chandler 103
Cambridge 94
Wilmington 94
Beijing 36
Princeton 34
Des Moines 33
San Diego 28
New York 25
Roxbury 25
Nanjing 24
Medford 19
Boardman 17
Singapore 17
Dong Ket 16
Washington 14
Helsinki 10
Shenyang 10
Changsha 7
Kaohsiung City 7
Cagliari 6
Hsinchu 5
London 5
Nanchang 5
Norwalk 5
Redmond 4
Redwood City 4
Santa Clara 4
Dallas 3
Hebei 3
Los Angeles 3
At Tuwal 2
Cesano Maderno 2
Glasgow 2
Indiana 2
Jiaxing 2
Mestre 2
Munich 2
Taichung 2
Vienna 2
Acton 1
Brussels 1
Chicago 1
Chiswick 1
Cincinnati 1
Columbus 1
Commerce City 1
Dublin 1
Frankfurt am Main 1
Hamburg 1
Hendon 1
Hounslow 1
Islington 1
Jinan 1
Kharkiv 1
Kobe 1
New Bedfont 1
Ningbo 1
Ogden 1
Prescot 1
Roermond 1
Sala Baganza 1
San Francisco 1
Seoul 1
Shanghai 1
State College 1
São Paulo 1
Taipei 1
Tianjin 1
Yenibosna 1
Zhengzhou 1
Totale 2.017
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Nome #
False Surface Trap Signatures Induced by Buffer Traps in AlGaN/GaN HEMTs 177
A review of failure modes and mechanisms of GaN-based HEMT's 169
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 157
Reliability aspects of GaN-HEMTs on composite substrates 130
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot electron stress 130
Characterization and Analysis of Trap-Related Effects in AlGaN-GaN HEMTs 123
Thermal storage effects on AlGaN/GaN HEMT 120
Mechanisms of RF current collapse in AlGaN-GaN high electron mobility transistors 115
Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields 112
Reliability of GaN high-electron-mobility transistors: State of the art and perspectives 112
Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing 94
Interpretation of Buffer-Trap Effects in AlGaN-GaN HEMTs 72
ESD Robustness of AlGaN/GaN HEMT Devices 69
Impact of 2-MeV Alpha Irradiation on AlGaN/GaN High Electron Mobility Transistors 67
Stress, Overstress and Strain on AlGaN/GaN HEMT Devices 67
An investigation of reliability on hybrid substrates GaN-HEMTs 62
High Voltage Electrical Characterization of Field-Plate Gate HEMT Devices 62
Investigation on charge trapping phenomena leading to kink effect on AlGaN/GaN HEMTs 62
Degradation of GaN HEMT at high drain voltages 61
Failure mechanisms of GaN-based transistors in on- and off-state 58
Light emission in GaN HEMTs: a powerful characterization and reliability tool 53
Traps characterization in Si-doped GaN/AlGaN/GaN HEMT on SiC by means of low frequency techniques 52
Trap related instabilities and localized damages induced by reverse bias” 47
Passivation degradation induced by thermal storage on AlGaN/GaN HEMTs 46
Effects Of Surface And Buffer Traps In Passivated Algan-GaN HEMTs 44
High power performances of GaN HEMT on SopSiC substrate 43
Totale 2.304
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Categoria #
all - tutte 7.329
article - articoli 2.648
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 9.977
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020508 0 0 2 166 51 39 32 58 47 63 28 22
2020/2021317 19 22 24 34 15 25 5 37 42 36 31 27
2021/2022282 4 52 63 8 4 8 18 18 3 1 46 57
2022/2023287 40 9 0 27 48 75 2 24 44 4 12 2
2023/2024207 6 13 23 9 21 71 9 18 3 10 13 11
2024/202546 12 17 17 0 0 0 0 0 0 0 0 0
Totale 2.304