DANESIN, FRANCESCA
 Distribuzione geografica
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Continente #
NA - Nord America 2.327
AS - Asia 805
EU - Europa 399
SA - Sud America 143
AF - Africa 125
Continente sconosciuto - Info sul continente non disponibili 9
OC - Oceania 9
Totale 3.817
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Nazione #
US - Stati Uniti d'America 2.245
SG - Singapore 255
CN - Cina 176
HK - Hong Kong 93
BR - Brasile 84
VN - Vietnam 79
DE - Germania 47
PL - Polonia 46
UA - Ucraina 45
FI - Finlandia 40
TW - Taiwan 32
GB - Regno Unito 25
RU - Federazione Russa 22
IN - India 21
IT - Italia 21
FR - Francia 19
SE - Svezia 17
JP - Giappone 14
AT - Austria 11
AR - Argentina 10
CO - Colombia 9
KR - Corea 9
LC - Santa Lucia 9
TR - Turchia 9
UY - Uruguay 9
JM - Giamaica 8
MX - Messico 8
SA - Arabia Saudita 8
TJ - Tagikistan 8
TT - Trinidad e Tobago 8
BD - Bangladesh 7
IS - Islanda 7
NL - Olanda 7
PE - Perù 7
TH - Thailandia 7
ZM - Zambia 7
BE - Belgio 6
BF - Burkina Faso 6
DZ - Algeria 6
EC - Ecuador 6
GM - Gambi 6
GN - Guinea 6
HN - Honduras 6
ID - Indonesia 6
IE - Irlanda 6
IQ - Iraq 6
LB - Libano 6
MK - Macedonia 6
AL - Albania 5
AZ - Azerbaigian 5
BZ - Belize 5
CG - Congo 5
CI - Costa d'Avorio 5
CL - Cile 5
CW - ???statistics.table.value.countryCode.CW??? 5
CY - Cipro 5
CZ - Repubblica Ceca 5
ES - Italia 5
GH - Ghana 5
KH - Cambogia 5
MA - Marocco 5
NP - Nepal 5
PH - Filippine 5
TZ - Tanzania 5
VE - Venezuela 5
AF - Afghanistan, Repubblica islamica di 4
BA - Bosnia-Erzegovina 4
BB - Barbados 4
BS - Bahamas 4
CA - Canada 4
CH - Svizzera 4
DO - Repubblica Dominicana 4
EE - Estonia 4
GR - Grecia 4
KE - Kenya 4
KG - Kirghizistan 4
ME - Montenegro 4
NZ - Nuova Zelanda 4
PA - Panama 4
RO - Romania 4
RW - Ruanda 4
TN - Tunisia 4
VC - Saint Vincent e Grenadine 4
XK - ???statistics.table.value.countryCode.XK??? 4
ZA - Sudafrica 4
AE - Emirati Arabi Uniti 3
AO - Angola 3
BJ - Benin 3
BO - Bolivia 3
CM - Camerun 3
DJ - Gibuti 3
GA - Gabon 3
GF - Guiana Francese 3
HR - Croazia 3
HT - Haiti 3
KZ - Kazakistan 3
LU - Lussemburgo 3
MD - Moldavia 3
MN - Mongolia 3
MW - Malawi 3
Totale 3.711
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Città #
Fairfield 245
Woodbridge 242
Jacksonville 217
Ann Arbor 201
Ashburn 197
Houston 123
Seattle 119
Singapore 119
Santa Clara 111
Chandler 103
Cambridge 94
Wilmington 94
Hong Kong 90
Beijing 57
Bytom 45
Boardman 43
Princeton 34
Des Moines 33
New York 28
San Diego 28
Roxbury 25
Nanjing 24
Ho Chi Minh City 21
Medford 19
Hanoi 17
Dong Ket 16
Durham 14
Washington 14
Los Angeles 13
Helsinki 12
Shenyang 10
Castries 9
Vienna 9
Changsha 8
Council Bluffs 8
Dallas 8
Dushanbe 8
Hyderabad 8
London 8
Munich 8
Biên Hòa 7
Chicago 7
Hsinchu County 7
Kaohsiung City 7
Lusaka 7
Reykjavik 7
São Paulo 7
Brooklyn 6
Cagliari 6
Conakry 6
Hsinchu 6
Panama City 6
Abidjan 5
Baku 5
Bangkok 5
Dar es Salaam 5
Montevideo 5
Nanchang 5
Norwalk 5
Tokyo 5
Accra 4
Bengaluru 4
Bishkek 4
Brussels 4
Kaohsiung 4
Kigali 4
Kingston 4
Kingstown 4
Lancaster 4
Lima 4
Nairobi 4
Nassau 4
Phnom Penh 4
Redmond 4
Redwood City 4
Skopje 4
Tirana 4
Willemstad 4
Amsterdam 3
Athens 3
Atlanta 3
Baghdad 3
Belize City 3
Bridgetown 3
Buffalo 3
Chisinau 3
Dakar 3
Dili 3
Douala 3
Dublin 3
Frankfurt am Main 3
Guayaquil 3
Hebei 3
Jeddah 3
Khartoum 3
Libreville 3
Lilongwe 3
Limassol 3
Luanda 3
Luxembourg 3
Totale 2.739
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Nome #
False Surface Trap Signatures Induced by Buffer Traps in AlGaN/GaN HEMTs 255
A review of failure modes and mechanisms of GaN-based HEMT's 234
Degradation induced by 2-MeV alpha particles on AlGaN/GaN High Electron Mobility Transistors 209
Reliability aspects of GaN-HEMTs on composite substrates 197
Evidence of traps creation in GaN/AlGaN/GaN HEMTs after a 3000 hour on-state and off-state hot electron stress 196
Characterization and Analysis of Trap-Related Effects in AlGaN-GaN HEMTs 195
Reliability of GaN high-electron-mobility transistors: State of the art and perspectives 189
Stress, Overstress and Strain on AlGaN/GaN HEMT Devices 186
Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields 173
Mechanisms of RF current collapse in AlGaN-GaN high electron mobility transistors 171
Thermal storage effects on AlGaN/GaN HEMT 165
Localized Damage in AlGaN/GaN HEMTs Induced by Reverse-Bias Testing 147
An investigation of reliability on hybrid substrates GaN-HEMTs 126
ESD Robustness of AlGaN/GaN HEMT Devices 124
Interpretation of Buffer-Trap Effects in AlGaN-GaN HEMTs 122
Light emission in GaN HEMTs: a powerful characterization and reliability tool 119
Degradation of GaN HEMT at high drain voltages 113
Failure mechanisms of GaN-based transistors in on- and off-state 108
High Voltage Electrical Characterization of Field-Plate Gate HEMT Devices 105
Impact of 2-MeV Alpha Irradiation on AlGaN/GaN High Electron Mobility Transistors 105
Traps characterization in Si-doped GaN/AlGaN/GaN HEMT on SiC by means of low frequency techniques 104
Investigation on charge trapping phenomena leading to kink effect on AlGaN/GaN HEMTs 101
Effects Of Surface And Buffer Traps In Passivated Algan-GaN HEMTs 100
Passivation degradation induced by thermal storage on AlGaN/GaN HEMTs 99
High power performances of GaN HEMT on SopSiC substrate 95
Trap related instabilities and localized damages induced by reverse bias” 83
Totale 3.821
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Categoria #
all - tutte 11.147
article - articoli 3.771
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 14.918
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021218 0 0 0 0 15 25 5 37 42 36 31 27
2021/2022282 4 52 63 8 4 8 18 18 3 1 46 57
2022/2023287 40 9 0 27 48 75 2 24 44 4 12 2
2023/2024207 6 13 23 9 21 71 9 18 3 10 13 11
2024/2025638 12 17 18 39 115 52 22 45 46 36 105 131
2025/2026925 70 193 235 272 155 0 0 0 0 0 0 0
Totale 3.821