We studied the degradation of High Electron Mobility Transistors (HEMT) after 2-MeV alpha irradiation for two different fluences, namely 1013 α/cm2 and 1014 α/cm2. After the exposure, we observed a drop in the drain current and transconductance, and a reduction in the gate diode leakage. These effects depended on the alpha fluence and were attributed to bulk damage and radiation-induced formation of deep-level trap sites in the channel layer, and doping compensation/removal in the barrier layer.
Impact of 2-MeV Alpha Irradiation on AlGaN/GaN High Electron Mobility Transistors
ZANON, FRANCO;DANESIN, FRANCESCA;GERARDIN, SIMONE;RAMPAZZO, FABIANA;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;PACCAGNELLA, ALESSANDRO
2006
Abstract
We studied the degradation of High Electron Mobility Transistors (HEMT) after 2-MeV alpha irradiation for two different fluences, namely 1013 α/cm2 and 1014 α/cm2. After the exposure, we observed a drop in the drain current and transconductance, and a reduction in the gate diode leakage. These effects depended on the alpha fluence and were attributed to bulk damage and radiation-induced formation of deep-level trap sites in the channel layer, and doping compensation/removal in the barrier layer.
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