BISOGNIN, GABRIELE
 Distribuzione geografica
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Continente #
NA - Nord America 4.331
AS - Asia 1.575
EU - Europa 787
SA - Sud America 424
AF - Africa 388
OC - Oceania 40
Continente sconosciuto - Info sul continente non disponibili 24
Totale 7.569
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Nazione #
US - Stati Uniti d'America 4.122
SG - Singapore 602
CN - Cina 301
BR - Brasile 280
HK - Hong Kong 166
VN - Vietnam 114
FI - Finlandia 112
DE - Germania 84
UA - Ucraina 66
IT - Italia 46
SE - Svezia 43
GB - Regno Unito 42
RU - Federazione Russa 35
FR - Francia 34
IN - India 27
AR - Argentina 25
PL - Polonia 20
ZA - Sudafrica 20
AZ - Azerbaigian 19
IQ - Iraq 19
TR - Turchia 19
KR - Corea 18
PS - Palestinian Territory 18
UY - Uruguay 18
CO - Colombia 17
CV - Capo Verde 17
ID - Indonesia 17
IE - Irlanda 17
EC - Ecuador 16
JP - Giappone 16
KZ - Kazakistan 16
MX - Messico 16
MY - Malesia 16
BB - Barbados 15
MA - Marocco 15
MK - Macedonia 15
MZ - Mozambico 15
PY - Paraguay 15
ES - Italia 14
NL - Olanda 14
PE - Perù 14
BJ - Benin 13
BS - Bahamas 13
BY - Bielorussia 13
CH - Svizzera 13
CR - Costa Rica 13
CW - ???statistics.table.value.countryCode.CW??? 13
GR - Grecia 13
JM - Giamaica 13
JO - Giordania 13
KE - Kenya 13
LY - Libia 13
VE - Venezuela 13
AE - Emirati Arabi Uniti 12
AL - Albania 12
BW - Botswana 12
CD - Congo 12
CZ - Repubblica Ceca 12
GT - Guatemala 12
IL - Israele 12
MU - Mauritius 12
RE - Reunion 12
RS - Serbia 12
ZM - Zambia 12
ZW - Zimbabwe 12
AO - Angola 11
BD - Bangladesh 11
BE - Belgio 11
CY - Cipro 11
DO - Repubblica Dominicana 11
HR - Croazia 11
LU - Lussemburgo 11
PA - Panama 11
VC - Saint Vincent e Grenadine 11
BA - Bosnia-Erzegovina 10
BZ - Belize 10
CI - Costa d'Avorio 10
DJ - Gibuti 10
KH - Cambogia 10
MD - Moldavia 10
NI - Nicaragua 10
PT - Portogallo 10
RO - Romania 10
SA - Arabia Saudita 10
SI - Slovenia 10
SO - Somalia 10
TN - Tunisia 10
TW - Taiwan 10
TZ - Tanzania 10
XK - ???statistics.table.value.countryCode.XK??? 10
AD - Andorra 9
BG - Bulgaria 9
CA - Canada 9
CL - Cile 9
DK - Danimarca 9
EG - Egitto 9
GF - Guiana Francese 9
GH - Ghana 9
LC - Santa Lucia 9
MW - Malawi 9
Totale 7.164
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Città #
Fairfield 679
Woodbridge 453
Ashburn 409
Singapore 328
Houston 318
Jacksonville 299
Seattle 285
Wilmington 246
Cambridge 235
Ann Arbor 196
Hong Kong 150
Chandler 149
Beijing 113
Princeton 100
Boardman 79
Santa Clara 72
San Diego 70
Helsinki 45
Ho Chi Minh City 42
Nanjing 40
Los Angeles 31
Munich 26
Buffalo 23
Hanoi 21
Guangzhou 20
Chicago 19
Baku 17
Milan 17
São Paulo 16
Bridgetown 15
Dublin 14
Montevideo 14
Amman 13
Nanchang 13
Cotonou 12
Johannesburg 12
Maputo 12
Nassau 12
Norwalk 12
Praia 12
Redondo Beach 12
Harare 11
Jiaxing 11
Kingstown 11
Nairobi 11
New York 11
Panama City 11
Abidjan 10
Dar es Salaam 10
Des Moines 10
Kinshasa 10
Lima 10
Lusaka 10
Managua 10
Medford 10
Phnom Penh 10
Shenyang 10
Tripoli 10
Willemstad 10
Accra 9
Andorra la Vella 9
Biên Hòa 9
Bytom 9
Castries 9
Dakar 9
Guatemala City 9
Kingston 9
Luanda 9
Minsk 9
Niamey 9
Roxbury 9
San José 9
Tokyo 9
Turku 9
Zagreb 9
Belo Horizonte 8
Brasília 8
Conakry 8
Dushanbe 8
Hebei 8
Kuala Lumpur 8
London 8
Nouakchott 8
Noumea 8
Papeete 8
Salt Lake City 8
Tashkent 8
Tirana 8
Ulan Bator 8
Belgrade 7
Bogotá 7
Casablanca 7
Djibouti 7
Havana 7
Kigali 7
Prague 7
Pristina 7
Roseau 7
San Francisco 7
Tallinn 7
Totale 5.170
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Nome #
B clustering in amorphous Si 207
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions 187
X-ray absorption and diffraction study of II-VI dilute oxide semiconductor alloy epilayers 186
Hydrogen diffusion in GaAs1-xNx 175
Boron diffusion in extrinsically doped crystalline silicon 171
Dissolution kinetics of B clusters in crystalline Si 168
Formation and dissolution of D-N complexes in dilute nitrides 166
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution 166
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy 165
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain 164
Strain relaxation of SiGe in a Si/SiGe/Si heterostructure under proton irradiation 162
Determination of lattice parameter and of N lattice location in InxGa1-xNyAs1-y/GaAs and GaNyAs1-y/GaAs epilayers 161
Atomistic Mechanism of Boron Diffusion in Silicon 159
Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping 158
Role of C in the formation and kinetics of nanovoids induced by He+ implantation in Si 157
Formation and incorporation of SiF4 molecules in F-implanted preamorphized Si 155
Evidence for a new hydrogen complex in dilute nitride alloys 155
Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation 154
Iso-concentration study of atomistic mechanism of B diffusion in Si 154
Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si 154
Nitrogen-induced hindering of In incorporation in InGaAsN 153
Lattice strain of B-B pairs formed by He irradiation in crystalline Si1-xBx/Si 150
Effect of strain on the carrier mobility in heavily doped p-type Si 150
Substitutional B in Si: Accurate lattice parameter determination 148
Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping 145
In situ thermal evolution of B-B pairs in crystalline Si: a spectroscopic high resolution x-ray diffraction study 144
Effect of hydrogen incorporation temperature in in plane-engineered GaAsN/GaAsN.H heterostructures 141
Local structure of nitrogen-hydrogen complexes in dilute nitrides 138
Ion beam characterization of Fe implanted GaN 138
Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge 136
Substitutional and clustered B in ion implanted Ge: Strain determination 134
Role of ion mass on damage accumulation during ion implantation in Ge 132
Evolution of boron-interstitial clusters in crystalline Si studied by transmission electron microscopy 132
Localization of He induced nanovoids in buried Si1-xGex thin films 129
Microscopic origin of compressive strain in hydrogen-irradiated dilute GaAs_{1−y}N_{y} alloys: Role of N-H_{n} centers with n>2 and their thermal stability 127
Carrier mobility and strain effect in heavily doped p-type Si 126
High-level incorporation of antimony in germanium by laser annealing 125
Lattice strain induced by boron clusters in crystalline silicon 125
Hydrogen-nitrogen complexes in dilute nitride alloys: origin of the compressive strain 124
Experimental evidences for two paths in the dissolution process of B clusters in crystalline Si 124
High resolution X-ray diffraction in situ study of very small complexes: the case of hydrogenated dilute nitrides 121
New insight on the interaction and diffusion properties of ion beam injected self-interstitials in crystalline silicon 118
On the Strain Induced by Arsenic into Silicon 117
Implantation and activation of high concentrations of Boron in Germanium 117
Thermal evolution of small N-D complexes in deuterated dilute nitrides revealed by in-situ high resolution X-ray diffraction 116
Interaction between self-interstitials and substitutional C in silicon: Interstitial trapping and C clustering mechanism 115
Recent Insights in the Diffusion of Boron in Silicon and Germanium 115
Suppression of boron transient enhanced diffusion by C trapping 113
Lattice strain and composition of boron-interstitial clusters in crystalline silicon 110
Experimental investigations of boron diffusion mechanisms in crystalline and amorphous silicon 106
Self interstitials diffusion and clustering with impurities in crystalline silicon 100
Quantitative determination of short-range ordering in InxGa1- xAs1-yNy 99
Structural characterization of light elements in semiconductor materials by means of selected nuclear reactions 96
New Opportunities to Study Defects by Soft X-Ray Absorption Fine Structure 92
Totale 7.580
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Categoria #
all - tutte 23.888
article - articoli 21.516
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 271
Totale 45.675
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021628 0 0 0 0 0 177 19 58 179 52 108 35
2021/2022715 17 43 154 68 22 29 31 93 32 16 94 116
2022/2023390 95 9 1 34 77 59 0 39 54 3 15 4
2023/2024162 8 43 12 12 14 12 3 2 5 1 24 26
2024/2025989 1 81 36 28 123 38 32 47 86 36 216 265
2025/20262.479 125 331 701 811 482 29 0 0 0 0 0 0
Totale 7.580