CANDELORI, ANDREA
 Distribuzione geografica
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Continente #
NA - Nord America 4.159
EU - Europa 458
AS - Asia 431
Continente sconosciuto - Info sul continente non disponibili 3
SA - Sud America 3
OC - Oceania 1
Totale 5.055
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Nazione #
US - Stati Uniti d'America 4.155
CN - Cina 208
SG - Singapore 145
FI - Finlandia 93
SE - Svezia 92
IT - Italia 69
DE - Germania 58
UA - Ucraina 51
FR - Francia 44
VN - Vietnam 37
GB - Regno Unito 31
IN - India 15
TR - Turchia 14
HK - Hong Kong 5
IE - Irlanda 5
RU - Federazione Russa 5
CA - Canada 4
ES - Italia 3
EU - Europa 3
NL - Olanda 3
BR - Brasile 2
JP - Giappone 2
MY - Malesia 2
AT - Austria 1
AU - Australia 1
DK - Danimarca 1
HU - Ungheria 1
IR - Iran 1
LA - Repubblica Popolare Democratica del Laos 1
LK - Sri Lanka 1
LT - Lituania 1
PE - Perù 1
Totale 5.055
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Città #
Fairfield 740
Woodbridge 373
Chandler 365
Ashburn 299
Houston 292
Seattle 266
Wilmington 258
Ann Arbor 244
Cambridge 221
Jacksonville 187
Princeton 107
Singapore 107
Boardman 102
Santa Clara 92
Beijing 69
San Diego 62
Des Moines 49
Roxbury 48
Nanjing 40
Medford 38
Dong Ket 37
Helsinki 32
Munich 22
Yenibosna 14
Shenyang 13
Hebei 12
Nanchang 11
Venice 11
Indiana 10
London 9
Changsha 8
Norwalk 8
Tianjin 8
Milan 7
Jinan 6
Kharkiv 6
Mestre 6
Redmond 6
Dublin 5
Guangzhou 5
Jiaxing 5
Los Angeles 5
Falls Church 4
Hong Kong 4
Kilburn 4
Borås 3
Casoria 3
Rome 3
Avezzano 2
Dalmine 2
Edinburgh 2
Elk Grove Village 2
Frankfurt am Main 2
Gassino Torinese 2
Groningen 2
Kuala Lumpur 2
Leawood 2
New York 2
Ningbo 2
Padova 2
Pavia 2
Redwood City 2
Rockville 2
San Francisco 2
São Paulo 2
Tappahannock 2
Turin 2
Vicopisano 2
Yellow Springs 2
Acton 1
Ardabil 1
Auburn Hills 1
Bagnaria Arsa 1
Boston 1
Central 1
Chiswick 1
Colombo 1
Copenhagen 1
Delhi 1
Handan 1
Hounslow 1
Lanzhou 1
L’Aquila 1
Manchester 1
Montreal 1
Nuremberg 1
Ogden 1
Paris 1
Pisa 1
Ravenna 1
Reston 1
Sopron 1
Sydney 1
Taizhou 1
Tokyo 1
Valencia 1
Vancouver 1
Verbania 1
Vienna 1
Vientiane 1
Totale 4.299
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Nome #
The SIRAD irradiation facility for radiation damage studies induced by high-energy ions 130
Proton irradiation effects on standard and oxygenated silicon diodes 114
Degradation of electron irradiated MOS capacitors 112
The SIRAD irradiation facility at LNL 112
Irradiation effects on thin epitaxial silicon detectors. 110
Lithium ion irradiation of standard and oxygenated silicon diodes 110
Ion electron emission microscopy at SIRAD 109
Low- and High-energy proton irradiations of standard and oxygenated silicon diodes 108
Heavy-Ions induced SEE effects measurements for the STRURED ASIC 105
A new irradiation facility for neutron-induced Single Event Effect studies at LNL 105
New evidence of dominant processing effects in standard and oxygenated silicon diodes after neutron irradiation 104
Breakdown properties of irradiated MOS capacitors 99
Lithium ion-induced damage in silicon detectors 98
SPICE evaluation of the S/N ratio for Si microstrip detectors 95
Neutron production targets for a new Single Event Effects facility at the 70 MeV Cyclotron of LNL-INFN 95
The effect of highly ionising particles on the CMS silicon strip tracker 94
A SPICE model of the ohmic side of double-sided Si microstrip detectors 94
A SPICE model for Si microstrip detectors and read-out electronics 94
The CMS silicon microstrip detectors: research and development 91
The silicon microstrip tracker for CMS 90
Single-event upset tests on the readout electronics for the pixel detectors of the PANDA experiment 90
Radiation testing of GLAST LAT tracker ASICs 90
Radiation tests of single photon avalanche diode for space applications 89
Defect characterization in silicon particle detectors irradiated with Li ions 88
Development of radiation tolerant semiconductor detectors for the Super-LHC 88
Radiation hardness of silicon detectors for high-energy physics applications 87
Radiation defects in neutron irradiated silicon with high oxygen concentration 84
HSPICE simulations of Si microstrip detectors 84
Neutron irradiation effects on standard and oxygenated silicon diodes 82
Radiation hardness of semiconductor detectors for high energy physics applications 81
Lithium ion irradiation effects on epitaxial silicon detectors 81
Test results of heavily irradiated Si detectors 81
CMS silicon tracker developments 80
MOSFET parameter degradation after Fowler–Nordheim injection stress 80
Radiation induced bulk damage in silicon diodes with pions and protons 79
High-voltage operation of silicon devices for LHC experiments 79
Silicon diode radiation hardening for high energy physics detectors 76
Status of the ion electron emission microscope at the SIRAD single event facility 76
Radiation hardness of silicon detectors based on pre-irradiated silicon 75
Charge collection efficiency of standard and oxygenated silicon microstrip detectors 75
PRODUCTION TESTING AND QUALITY ASSURANCE OF CMS SILICON MICROSTRIP TRACKER READOUT CHIPS 74
Latest results of SEE measurements obtained by the STRURED demonstrator ASIC 73
Study of Single Event transients on the VELA ASIC, x-ray detectors FEE for new generation astronomical instruments 73
Radiation hardness assurance of the CLARO8 front-end chip for the LHCb RICH detector upgrade 73
A fast and radiation-hard single-photon counting ASIC for the upgrade of the LHCb RICH detector at CERN 69
Radiation effects on breakdown characteristics of multiguarded devices 68
Recent advancements in the development of radiation hard semiconductor detectors for S-LHC 67
The R&D program for silicon detectors in CMS 66
Silicon detectors for the sLHC 65
Spice Analysis of Signal Propagation In Si Microstrip Detectors 63
Bulk radiation damage induced in thin epitaxial silicon detectors by 24 GeV protons 60
Radiation-hard semiconductor detectors for SuperLHC 58
Radiation Hardness of the CLARO8 ASIC: a Fast Single-Photon Counting Chip for the LHCb Experiment at CERN 58
SPICE evaluation of the S/N ratio for Si microstrip detectors 57
Improvement in breakdown characteristics with multiguard structures in microstrip detectors for CMS 56
R&D for the CMS silicon tracker 53
The CMS silicon tracker 49
The silicon microstrip tracker for CMS 49
High-voltage breakdown studies on Si microstrip detectors 45
The CMS silicon strip tracker 45
Comparative study of < 111 > and < 100 > crystals and capacitance measurements on Si strip detectors in CMS 42
Breakdown of coupling dielectrics for Si microstrip detectors 32
Status and prospects of the SIRAD irradiation facility for radiation effects studies at LNL2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS) 31
Total dose irradiation of a 0.25 micron process 28
Totale 5.068
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Categoria #
all - tutte 19.581
article - articoli 16.968
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 36.549
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020623 0 0 0 0 0 0 112 129 139 117 84 42
2020/2021655 34 42 12 57 26 100 11 67 120 42 72 72
2021/2022890 29 49 190 41 69 44 29 97 41 24 93 184
2022/2023728 138 94 24 88 134 85 0 45 71 2 41 6
2023/2024178 12 30 18 24 7 4 7 3 2 5 35 31
2024/2025436 1 79 53 64 203 36 0 0 0 0 0 0
Totale 5.068