High-voltage operation can be a solution to obtain full charge collection in strongly irradiated silicon detectors. The maximum bias voltage which can be applied is limited by the breakdown point of the junction. We show how multiguard structures can enhance the breakdown voltage in p(+)-n silicon devices designed for applications in the LHC environment. (C) 1998 Elsevier Science B.V. All rights reserved.
High-voltage operation of silicon devices for LHC experiments
BISELLO, DARIO;CANDELORI, ANDREA;PACCAGNELLA, ALESSANDRO;
1998
Abstract
High-voltage operation can be a solution to obtain full charge collection in strongly irradiated silicon detectors. The maximum bias voltage which can be applied is limited by the breakdown point of the junction. We show how multiguard structures can enhance the breakdown voltage in p(+)-n silicon devices designed for applications in the LHC environment. (C) 1998 Elsevier Science B.V. All rights reserved.
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