Radiation hardness tests of the CLARO8 ASIC, designed in AMS 0.35micron CMOS technology for the upgrade of the CERN LHCb RICH detectors, are presented, including measurements of total-ionizing dose and single event effects.

Radiation Hardness of the CLARO8 ASIC: a Fast Single-Photon Counting Chip for the LHCb Experiment at CERN

Candelori Andrea;Mattiazzo Serena;Silvestrin Luca;
2016

Abstract

Radiation hardness tests of the CLARO8 ASIC, designed in AMS 0.35micron CMOS technology for the upgrade of the CERN LHCb RICH detectors, are presented, including measurements of total-ionizing dose and single event effects.
2016
2016 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW)
2016 IEEE RADIATION EFFECTS DATA WORKSHOP
978-1-5090-6081-8
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11577/3256692
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