Two silicon microstrip detectors, one fabricated from a standard and the second from a highly oxygenated substrate, were non-uniformly irradiated by 24GeV protons to fluences ranging between 2.3 and 6.3×10^14cm^-2. Charge collection efficiency measurements, performed by pulsing the detectors with a 1060μm wavelength laser, show that the beneficial effect of the oxygenation remains, although reduced with respect to that observed by C-V measurements on diodes fabricated with the detectors.
Charge collection efficiency of standard and oxygenated silicon microstrip detectors
RANDO, RICCARDO;BISELLO, DARIO;CANDELORI, ANDREA;
2002
Abstract
Two silicon microstrip detectors, one fabricated from a standard and the second from a highly oxygenated substrate, were non-uniformly irradiated by 24GeV protons to fluences ranging between 2.3 and 6.3×10^14cm^-2. Charge collection efficiency measurements, performed by pulsing the detectors with a 1060μm wavelength laser, show that the beneficial effect of the oxygenation remains, although reduced with respect to that observed by C-V measurements on diodes fabricated with the detectors.
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