NARDO, ARIANNA
 Distribuzione geografica
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Continente #
NA - Nord America 937
AS - Asia 246
EU - Europa 241
OC - Oceania 3
SA - Sud America 3
Totale 1.430
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Nazione #
US - Stati Uniti d'America 936
SG - Singapore 126
IT - Italia 85
CN - Cina 76
DE - Germania 47
FR - Francia 23
FI - Finlandia 20
BE - Belgio 13
HK - Hong Kong 12
RU - Federazione Russa 11
GB - Regno Unito 10
NL - Olanda 9
IN - India 8
KR - Corea 8
JP - Giappone 6
AT - Austria 5
TW - Taiwan 5
SE - Svezia 4
UA - Ucraina 4
TR - Turchia 3
AU - Australia 2
BR - Brasile 2
CH - Svizzera 2
DK - Danimarca 2
ID - Indonesia 2
LT - Lituania 2
AR - Argentina 1
CA - Canada 1
ES - Italia 1
IE - Irlanda 1
NZ - Nuova Zelanda 1
PL - Polonia 1
SK - Slovacchia (Repubblica Slovacca) 1
Totale 1.430
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Città #
Fairfield 148
Ashburn 76
Chandler 72
Santa Clara 72
Singapore 65
Woodbridge 63
Seattle 60
Houston 59
Cambridge 45
Wilmington 35
Boardman 31
Beijing 29
Ann Arbor 24
Padova 22
Helsinki 19
San Diego 19
Medford 18
Princeton 18
Des Moines 16
Guangzhou 12
New York 11
Hong Kong 9
Blaustein 8
Chiampo 6
Hwaseong-si 5
Milan 5
Nuremberg 5
Roxbury 5
Bologna 4
Bristol 4
Cagliari 4
Falkenstein 4
Frankfurt am Main 4
Hsinchu 4
Kermt 4
Magdeburg 4
Washington 4
Bagneux 3
Bengaluru 3
Cabiate 3
Leuven 3
Tokyo 3
Vienna 3
Villorba 3
Zellik 3
Atlanta 2
Blacksburg 2
Bolzano 2
Borås 2
Central 2
Dallas 2
Dongguan 2
Grigny 2
Hamburg 2
Incheon 2
Istanbul 2
London 2
Los Angeles 2
Miami 2
Mumbai 2
Nashville 2
Nijmegen 2
Odense 2
Perth 2
Prineville 2
Riese Pio X 2
Rome 2
San Jose 2
Amsterdam 1
Bhopal 1
Brussels 1
Brügg 1
Changsha 1
Chiswick 1
Conversano 1
Draveil 1
Dublin 1
Ferrara 1
Fossalta di Piave 1
Fuzhou 1
Garland 1
Goyang-si 1
Hangzhou 1
Hebei 1
Hefei 1
Heverlee 1
Ilford 1
Jakarta 1
Jinan 1
Jining 1
Kanpur 1
Kiel 1
Kolkata 1
Lappeenranta 1
Lomas del Mirador 1
Madrid 1
Manassas 1
Nanjing 1
Parobé 1
Pico Rivera 1
Totale 1.095
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Nome #
Degradation physics of GaN-based lateral and vertical devices 128
Analysis of parasitic effects and reliability issues of Gallium Nitride (GaN) -based devices 82
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors 79
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping 78
Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis 76
Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy 72
Stability and degradation of isolation and surface in Ga2O3 devices 71
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects 70
Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements 69
Hot-Electron Effects in AlGaN/GaN HEMTs under Semi-ON DC Stress 66
Degradation effects and origin in H-terminated diamond MESFETs 65
Reliability of H-terminated diamond MESFETs in high power dissipation operating condition 64
Charge trapping and degradation of Ga2O3 isolation structures for power electronics 59
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 55
Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs 54
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 52
Hydrogen-terminated diamond MESFETs: Operating principles, static and dynamic performance, and reliability 43
Charge trapping in GaN Power Transistors: Challenges and Perspectives 42
Comparison between lateral and vertical Ga2O3 isolation structures 39
Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes 39
Review on the degradation of GaN-based lateral power transistors 38
Dynamic performance of wide bandgap devices 35
Vth stability and gate leakage current trade-off in p-GaN gate power HEMTs during on- and off-state stress 26
Dynamic phenomena in 650V p-GaN technology 20
RON and VTH Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout 17
Time-dependent degradation of hydrogen-terminated diamond MESFETs 15
Recovery of drain-induced threshold voltage shift by positive gate bias in GaN power HEMTs with p-GaN gate 10
Totale 1.464
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Categoria #
all - tutte 7.691
article - articoli 4.345
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 12.036
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202082 0 0 0 0 0 0 0 0 32 30 9 11
2020/2021303 34 11 17 16 5 0 88 42 35 18 13 24
2021/2022223 4 17 18 14 8 11 22 28 18 12 19 52
2022/2023197 38 7 10 4 27 30 2 20 34 6 8 11
2023/2024200 16 36 24 14 10 22 15 8 16 13 12 14
2024/2025412 6 44 31 42 98 46 24 103 18 0 0 0
Totale 1.464