NARDO, ARIANNA
 Distribuzione geografica
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Continente #
NA - Nord America 816
EU - Europa 169
AS - Asia 152
OC - Oceania 3
SA - Sud America 1
Totale 1.141
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Nazione #
US - Stati Uniti d'America 816
CN - Cina 68
IT - Italia 63
SG - Singapore 54
DE - Germania 25
FR - Francia 23
FI - Finlandia 15
BE - Belgio 10
GB - Regno Unito 8
IN - India 8
NL - Olanda 8
JP - Giappone 6
TW - Taiwan 5
SE - Svezia 4
UA - Ucraina 4
HK - Hong Kong 3
KR - Corea 3
TR - Turchia 3
AT - Austria 2
AU - Australia 2
CH - Svizzera 2
DK - Danimarca 2
ID - Indonesia 2
BR - Brasile 1
IE - Irlanda 1
NZ - Nuova Zelanda 1
PL - Polonia 1
SK - Slovacchia (Repubblica Slovacca) 1
Totale 1.141
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Città #
Fairfield 148
Ashburn 76
Chandler 72
Woodbridge 63
Seattle 60
Houston 59
Cambridge 45
Singapore 40
Wilmington 35
Beijing 29
Ann Arbor 24
San Diego 19
Medford 18
Princeton 18
Des Moines 16
Padova 15
Helsinki 14
New York 11
Guangzhou 9
Blaustein 8
Chiampo 6
Santa Clara 6
Boardman 5
Roxbury 5
Bristol 4
Cagliari 4
Hsinchu 4
Kermt 4
Magdeburg 4
Washington 4
Bagneux 3
Bengaluru 3
Cabiate 3
Tokyo 3
Villorba 3
Zellik 3
Atlanta 2
Blacksburg 2
Borås 2
Central 2
Dallas 2
Dongguan 2
Grigny 2
Hamburg 2
Incheon 2
Istanbul 2
Leuven 2
Los Angeles 2
Miami 2
Milan 2
Mumbai 2
Nashville 2
Nijmegen 2
Odense 2
Perth 2
Prineville 2
Rome 2
San Jose 2
Vienna 2
Bhopal 1
Bologna 1
Brügg 1
Changsha 1
Chiswick 1
Draveil 1
Dublin 1
Ferrara 1
Fossalta di Piave 1
Fuzhou 1
Garland 1
Goyang-si 1
Hangzhou 1
Hebei 1
Heverlee 1
Jakarta 1
Jinan 1
Kanpur 1
Kiel 1
Kolkata 1
Lappeenranta 1
London 1
Nanjing 1
Pico Rivera 1
Pinehaven 1
Ravenna 1
Redmond 1
Redwood City 1
Roermond 1
Ronco Scrivia 1
Ružomberok 1
Sarcedo 1
Stuttgart 1
São Paulo 1
Taglio di Po 1
Taichung 1
Ube 1
Warsaw 1
Totale 927
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Nome #
Degradation physics of GaN-based lateral and vertical devices 119
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors 71
Analysis of parasitic effects and reliability issues of Gallium Nitride (GaN) -based devices 70
ESD-failure of E-mode GaN HEMTs: Role of device geometry and charge trapping 68
Stability and degradation of isolation and surface in Ga2O3 devices 65
Storage and release of buffer charge in GaN-on-Si HEMTs investigated by transient measurements 62
Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis 62
Reliability of H-terminated diamond MESFETs in high power dissipation operating condition 59
Non thermally-activated transients and buffer traps in GaN transistors with p-type gate: A new method for extracting the activation energy 59
A novel on-wafer approach to test the stability of GaN-based devices in hard switching conditions: Study of hot-electron effects 56
Degradation effects and origin in H-terminated diamond MESFETs 53
Hot-Electron Effects in AlGaN/GaN HEMTs under Semi-ON DC Stress 51
Charge trapping and degradation of Ga2O3 isolation structures for power electronics 48
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 43
Cause and Effects of OFF-State Degradation in Hydrogen-Terminated Diamond MESFETs 43
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 41
Hydrogen-terminated diamond MESFETs: Operating principles, static and dynamic performance, and reliability 32
Comparison between lateral and vertical Ga2O3 isolation structures 31
Charge trapping in GaN Power Transistors: Challenges and Perspectives 30
Review on the degradation of GaN-based lateral power transistors 28
Positive and negative charge trapping GaN HEMTs: Interplay between thermal emission and transport-limited processes 28
Dynamic performance of wide bandgap devices 20
Vth stability and gate leakage current trade-off in p-GaN gate power HEMTs during on- and off-state stress 12
Time-dependent degradation of hydrogen-terminated diamond MESFETs 11
RON and VTH Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and Layout 6
Totale 1.168
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Categoria #
all - tutte 6.077
article - articoli 3.575
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 9.652
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020107 0 0 0 3 6 4 5 7 32 30 9 11
2020/2021303 34 11 17 16 5 0 88 42 35 18 13 24
2021/2022223 4 17 18 14 8 11 22 28 18 12 19 52
2022/2023197 38 7 10 4 27 30 2 20 34 6 8 11
2023/2024200 16 36 24 14 10 22 15 8 16 13 12 14
2024/2025116 6 44 31 35 0 0 0 0 0 0 0 0
Totale 1.168