In this paper, we present simulation results that reproduce stress and recovery experiments in Carbon-doped power GaN MOS-HEMTs and explain the associated RON increase and decrease as the result of the emission, redistribution and re-trapping of holes within the Carbon-doped buffer. The proposed model can straightforwardly clarify the beneficial impact of the recently proposed p-type drain contact on RON degradation as being a consequence of enhanced hole trapping and reduced negative trapped charge within the buffer during stress.
Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs
Meneghini M.;Meneghesso G.;Zanoni E.;Verzellesi G.
2020
Abstract
In this paper, we present simulation results that reproduce stress and recovery experiments in Carbon-doped power GaN MOS-HEMTs and explain the associated RON increase and decrease as the result of the emission, redistribution and re-trapping of holes within the Carbon-doped buffer. The proposed model can straightforwardly clarify the beneficial impact of the recently proposed p-type drain contact on RON degradation as being a consequence of enhanced hole trapping and reduced negative trapped charge within the buffer during stress.
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