We report a study of the effects of temperature and current on carrier distribution and recombination dynamics in InGaN-based LEDs grown on sapphire substrate. The active region of the LEDs contains three quantum wells (QWs) with the same thickness and a different indium content in each well, of 5%, 15%, and 25%, resulting in violet, blue and green emission, respectively. Two complementary structures, with the deepest QW closer to the anode (“GBV”) or to the cathode (“VBG”), were grown.
Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based LEDs with color-coded quantum wells
MENEGHINI, MATTEO;VACCARI, SIMONE;TRIVELLIN, NICOLA;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2012
Abstract
We report a study of the effects of temperature and current on carrier distribution and recombination dynamics in InGaN-based LEDs grown on sapphire substrate. The active region of the LEDs contains three quantum wells (QWs) with the same thickness and a different indium content in each well, of 5%, 15%, and 25%, resulting in violet, blue and green emission, respectively. Two complementary structures, with the deepest QW closer to the anode (“GBV”) or to the cathode (“VBG”), were grown.
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