This paper presents an extensive analysis of the electroluminescence spectra of InGaN-based LEDs, measured at different temperatures and current levels. The study was carried out on triple-quantum well InGaN-based LEDs, grown on a sapphire substrate and with a different indium content in each well.
Current and temperature dependence of electroluminescence in InGaN-based LEDs with multi-wavelength emission
VACCARI, SIMONE;MENEGHINI, MATTEO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2012
Abstract
This paper presents an extensive analysis of the electroluminescence spectra of InGaN-based LEDs, measured at different temperatures and current levels. The study was carried out on triple-quantum well InGaN-based LEDs, grown on a sapphire substrate and with a different indium content in each well.File in questo prodotto:
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