The first Silicon Carbide power diodes have only recently become commercially available: the high electrical breakdown field and the very high thermal conductivity of this material make it particularly suited to the manufacturing of power devices. The characteristics of a 4A, 600V SiC Schottky diode –the Infineon SDP04S60- is experimentally evaluated and its performance in a typical power application is compared with two ultra-fast, soft-recovery, silicon power diodes with same ratings -the RURD460 and the recently presented STTH5R06D- in terms of efficiency improvement and EMI reduction.
Schottky SiC Diodes in Power Switching Applications
PIEROBON, ROBERTO;BUSO, SIMONE;CITRON, MASSIMILIANO;MENEGHESSO, GAUDENZIO;SPIAZZI, GIORGIO;ZANONI, ENRICO
2002
Abstract
The first Silicon Carbide power diodes have only recently become commercially available: the high electrical breakdown field and the very high thermal conductivity of this material make it particularly suited to the manufacturing of power devices. The characteristics of a 4A, 600V SiC Schottky diode –the Infineon SDP04S60- is experimentally evaluated and its performance in a typical power application is compared with two ultra-fast, soft-recovery, silicon power diodes with same ratings -the RURD460 and the recently presented STTH5R06D- in terms of efficiency improvement and EMI reduction.
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