This paper presents an extensive analysis of the electroluminescence spectra of InGaN-based LEDs, measured at several temperature and current levels. The study was carried out on triple-quantum well devices, with different indium content in each well: LEDs have a sapphire substrate, a n-GaN layer, followed by three quantum wells with 5 %, 15 %, and 25 % indium content (resulting in violet, blue and green emission respectively), and a p-type GaN layer
Extensive electroluminescence analysis of InGaN-based Light-Emitting Diodes: temperature and current-dependent effects
VACCARI, SIMONE;MENEGHINI, MATTEO;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO
2011
Abstract
This paper presents an extensive analysis of the electroluminescence spectra of InGaN-based LEDs, measured at several temperature and current levels. The study was carried out on triple-quantum well devices, with different indium content in each well: LEDs have a sapphire substrate, a n-GaN layer, followed by three quantum wells with 5 %, 15 %, and 25 % indium content (resulting in violet, blue and green emission respectively), and a p-type GaN layer
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