The aim of this paper is to systematically study gate-lag and transconductance dispersion effects and rf frequency dependence of breakdown phenomena in various InP HEMTs with different gate-recess technologies. Results demonstrate that two-step recess devices adopting InP etch-stop layer and optimized Schottky contact on InAlAs are free from dispersive and kink effects. The breakdown phenomena dependence on frequency has been studied by measuring the output reflection coefficient S22: in impact ionization (I.I.) regime an inductive component of S22 at low frequency appears and it can be linked to I.I. current. This can be useful to characterize breakdown also in devices where leakage current prevents an evaluation of the gate current component due to I.I.
RF Frequency dispersion and frequency dependence of breakdown phenomena in InAlAs/InGaAs/InP HEMTs
PIEROBON, ROBERTO;RAMPAZZO, FABIANA;MENEGHESSO, GAUDENZIO;ZANONI, ENRICO;
2003
Abstract
The aim of this paper is to systematically study gate-lag and transconductance dispersion effects and rf frequency dependence of breakdown phenomena in various InP HEMTs with different gate-recess technologies. Results demonstrate that two-step recess devices adopting InP etch-stop layer and optimized Schottky contact on InAlAs are free from dispersive and kink effects. The breakdown phenomena dependence on frequency has been studied by measuring the output reflection coefficient S22: in impact ionization (I.I.) regime an inductive component of S22 at low frequency appears and it can be linked to I.I. current. This can be useful to characterize breakdown also in devices where leakage current prevents an evaluation of the gate current component due to I.I.
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