The performance of a 600V, 4A Silicon Carbide (SiC) Schottky diode (Infineon SDP04S60) is experimentally evaluated and compared with an ultra-fast, soft-recovery, silicon power diode (Fairchild RURD460). A substantially negligible recovery current is observed for the SiC Schottky diode with expected great advantage on EMI generation; on the other hand, the forward voltage drop is larger than that of Si diodes with not easily predictable behavior in power applications efficiency.
Characterization of Schottky SiC Diodes for Power Applications
PIEROBON, ROBERTO;BUSO, SIMONE;CITRON, MASSIMILIANO;MENEGHESSO, GAUDENZIO;SPIAZZI, GIORGIO;ZANONI, ENRICO
2001
Abstract
The performance of a 600V, 4A Silicon Carbide (SiC) Schottky diode (Infineon SDP04S60) is experimentally evaluated and compared with an ultra-fast, soft-recovery, silicon power diode (Fairchild RURD460). A substantially negligible recovery current is observed for the SiC Schottky diode with expected great advantage on EMI generation; on the other hand, the forward voltage drop is larger than that of Si diodes with not easily predictable behavior in power applications efficiency.
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