CARNERA, ALBERTO
CARNERA, ALBERTO
Dipartimento di Fisica e Astronomia "Galileo Galilei" - DFA
1950°C post implantation annealing of Al+ implanted 4H-SiC: Relevance of the annealing time
2016 Fedeli, P.; Gorni, M.; Carnera, Alberto; Parisini, A.; Alfieri, G.; Grossner, U.; Nipoti, R.
A distributed data acquisition system for nuclear detectors
2018 Fontana, Cristiano L.; Carnera, Alberto; Lunardon, Marcello; Pino, Felix E.; Sada, Cinzia; Soramel, Francesca; Stevanato, Luca; Moretto, Sandra
A distributed data acquisition system for signal digitizers with on-line analysis capabilities
2017 Fontana, Cristiano L.; Lunardon, Marcello; Pino, Felix E.; Stevanato, Luca; Carnera, Alberto; Sada, Cinzia; Soramel, Francesca; Moretto, Sandra
A non-destructive approach for doping profiles characterization by micro-Raman spectroscopy: the case of B-implanted Ge
2014 Sanson, Andrea; Napolitani, Enrico; Carnera, Alberto; G., Impellizzeri; M., Giarola; G., Mariotto
Activation annealing of ultra-low-energy implanted boron in silicon: a study combining experiment and process modeling
2000 Schroer, E; Privitera, V; Priolo, F; Napolitani, Enrico; Carnera, Alberto
Advances on the development of the detection system of C-BORD’s rapidly relocatable tagged neutron inspection
2018 Pino, Felix; Fontana, Cristiano Lino; Lunardon, Marcello; Stevanato, Luca; Sada, Cinzia; Carnera, Alberto; Soramel, Francesca; Moretto, Sandra; Nebbia, Giancarlo; Sardet, Alix; Carasco, Cedric; Perot, Bertrand; Sannie, Guillaume; Iovene, Alessandro; Tintori, Carlo; Sibczynski, Pawel; Swiderski, Lukasz; Grodzicki, Krystian; Moszynski, Marek
Al-o Complex-formation In Ion-implanted Czochralski and Floating-zone Si Substrates
1993 A., Laferla; L., Torrisi; G., Galvagno; E., Rimini; G., Ciavola; Carnera, Alberto; Gasparotto, Andrea
Al-o Interactions In Ion-implanted Crystalline Silicon
1994 G., Galvagno; A., Laferla; C., Spinella; F., Priolo; V., Raineri; L., Torrisi; E., Rimini; Carnera, Alberto; Gasparotto, Andrea
Anomalous low-temperature dopant diffusivity and defect structure in Sb-implanted and Sb/B-implanted annealed silicon samples
1995 A., Armigliato; Romanato, Filippo; Drigo, Antonio; Carnera, Alberto; C., Brizard; J. R., Regnard; J. L., Allain
Apparatus to study crystal channeling and volume reflection phenomena at the SPSH8 beamline
2008 Scandale, W; Efthymiopoulos, I; Still, Da; Carnera, Alberto; DELLA MEA, G; DE SALVADOR, Davide; Milan, R; Vomiero, A; Baricordi, S; Chiozzi, S; Dalpiaz, P; Damiani, C; Fiorini, M; Guidi, V; Martinelli, G; Mazzolari, A; Milan, E; Ambrosi, G; Azzarello, P; Battiston, R; Bertucci, B; Burger, Wj; Ionica, M; Zuccon, P; Cavoto, G; Santacesaria, R; Valente, P; Vallazza, E; Afonin, Ag; Baranov, Vt; Chesnokov, Ya; Kotov, Vi; Maisheev, Va; Yazynin, Ia; Afanasiev, Sv; Kovalenko, Ad; Taratin, Am; Bondar, Nf; Denisov, As; Gavrikov, Ya; Ivanov, Ym; Ivochkin, Vg; Kosyanenko, Sv; Lapina, Lp; Levtchenko, Pm; Petrunin, Aa; Skorobogatov, Vv; Suvoro, Vm; Bolognini, D; Foggetta, L; Hasan, S; Prest, M.
Atomic transport properties and electrical activation of ultra-low energy implanted boron in crystalline silicon
1999 Privitera, V.; Napolitani, Enrico; Priolo, F.; Moffat, S.; LA MAGNA, A.; Mannino, G.; Carnera, Alberto; Picariello, A.
Atomistic Mechanism of Boron Diffusion in Silicon
2006 DE SALVADOR, Davide; Napolitani, Enrico; S., Mirabella; Bisognin, Gabriele; G., Impellizzeri; Carnera, Alberto; F., Priolo
Axial Channeling of Boron Ions Into Silicon
1992 A., Laferla; G., Galvagno; V., Raineri; R., Setola; E., Rimini; Carnera, Alberto; Gasparotto, Andrea
B clustering in amorphous Si
2008 DE SALVADOR, Davide; Bisognin, Gabriele; DI MARINO, Marco; Napolitani, Enrico; Carnera, Alberto; Mirabella, S; Pecora, E; Bruno, E; Priolo, F; Graoui, H; Foad, Ma; Boscherini, F.
B diffusion and activation phenomena during post-annealing of C co-implanted ultra-shallow junctions
2006 DI MARINO, Marco; Napolitani, Enrico; Mastromatteo, Massimo; Bisognin, Gabriele; DE SALVADOR, Davide; Carnera, Alberto; Mirabella, S; Impellizzeri, G; Priolo, F; Graoui, H; Foad, Ma
Be diffusion in molecular beam epitaxy-grown GaAs structures
2003 Mosca, R; Bussei, P; Franchi, S; Frigeri, P; Gombia, E; Carnera, Alberto; Peroni, M.
Boron diffusion in extrinsically doped crystalline silicon
2010 DE SALVADOR, Davide; Napolitani, Enrico; Bisognin, Gabriele; Pesce, M; Carnera, Alberto; Bruno, E; Impellizzeri, G; Mirabella, S.
Boron Implants In (100) Silicon At Tilt Angles of 0-degrees and 7-degrees
1990 V., Raineri; G., Galvagno; E., Rimini; S., Capizzi; A., Laferla; Carnera, Alberto; G., Ferla
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain
2004 Bisognin, Gabriele; DE SALVADOR, Davide; Napolitani, Enrico; Aldegheri, L; Berti, Marina; Carnera, Alberto; Drigo, Antonio; Mirabella, S; Bruno, E; Impellizzeri, G; Priolo, F.
Cathodoluminescence evidence of stress-induced outdiffusion of beryllium in AlGaAs/GaAs heterojunction bipolar transistors
1998 M., Borgarino; G., Salviati; L., Cattani; L., Lazzarini; C. Z., Fregonara; F., Fantini; Carnera, Alberto