CASU, CLAUDIA
 Distribuzione geografica
Continente #
EU - Europa 167
NA - Nord America 164
AS - Asia 134
AF - Africa 2
SA - Sud America 2
Totale 469
Nazione #
US - Stati Uniti d'America 161
IT - Italia 111
SG - Singapore 54
CN - Cina 39
DE - Germania 20
HK - Hong Kong 12
AT - Austria 7
IN - India 7
JP - Giappone 7
CH - Svizzera 5
KR - Corea 5
RU - Federazione Russa 4
TW - Taiwan 4
CA - Canada 3
FI - Finlandia 3
FR - Francia 3
IE - Irlanda 3
IR - Iran 3
BR - Brasile 2
ES - Italia 2
GB - Regno Unito 2
GR - Grecia 2
PH - Filippine 2
PL - Polonia 2
TN - Tunisia 2
IL - Israele 1
LT - Lituania 1
NL - Olanda 1
UA - Ucraina 1
Totale 469
Città #
Padova 55
Singapore 31
Santa Clara 27
Ashburn 26
Riese Pio X 24
Chandler 15
Boardman 13
Beijing 10
Hong Kong 10
Nuremberg 10
Scorzè 10
Milan 6
Shanghai 6
New Delhi 5
New York 4
Turin 4
Fairfield 3
Montesilvano Marina 3
San Diego 3
Tokyo 3
Tomobuchichō 3
Dallas 2
Davao City 2
Helsinki 2
Lausanne 2
Medford 2
Ogden 2
Ottawa 2
Paderno Dugnano 2
Paese 2
Princeton 2
Pune 2
Pułtusk 2
Roses 2
Sassari 2
Thessaloniki 2
Tunis 2
Washington 2
Atlanta 1
Bremblens 1
Cheonan 1
Chiswick 1
Des Moines 1
Dublin 1
Falkenstein 1
Gland 1
Hamburg 1
Hounslow 1
Houston 1
Jerusalem 1
Kent 1
Kharkiv 1
Kochi 1
Lappeenranta 1
Los Angeles 1
Montegrotto Terme 1
Montreal 1
Nantou City 1
Phoenix 1
Pohang 1
Roxbury 1
Seoul 1
São Pedro 1
Zurich 1
Totale 331
Nome #
Study of the efficiency and reliability of GaN-based visible light emitting diode 67
III-N optoelectronics: defects, reliability and challenges 59
Defects and Reliability of GaN-Based LEDs: Review and Perspectives 55
Probing carrier transport and recombination processes in dichromatic GaN-based LEDs: a nonequilibrium Green’s function study 40
Defects in III-N LEDs: experimental identification and impact on electro-optical characteristics 40
Effect of indium content and carrier distribution on the efficiency and reliability of InGaN/GaN-based multi quantum well light emitting diode 35
III-N optical devices: physical processes limiting efficiency and reliability 33
Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode 28
Modeling the effect of spatial position and concentration of defects on optical degradation of InGaN/GaN multi quantum well light emitting diodes 25
Investigation on the optical stability during ageing of InGaN-based light emitting diode 25
Injection-limited efficiency of InGaN LEDs and impact on electro-optical performance and ageing: a case study 25
Effects of the generation and relocation of defects during the aging process of InGaN-based multi quantum well light emitting diodes 24
Bias-dependent degradation of single quantum well on InGaN-based light emitting diode 17
Effect of High Monochromatic Radiation on the Electrical Performance of CIGS Solar Cell 10
Totale 483
Categoria #
all - tutte 3.189
article - articoli 1.200
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.389


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/202218 0 0 0 0 0 0 4 0 0 0 10 4
2022/202382 5 0 2 2 9 7 12 13 19 0 8 5
2023/2024153 8 13 9 11 14 13 9 3 33 16 9 15
2024/2025230 13 20 13 17 31 54 35 33 14 0 0 0
Totale 483