SARO, MARCO
 Distribuzione geografica
Continente #
EU - Europa 49
AS - Asia 48
NA - Nord America 26
Totale 123
Nazione #
IT - Italia 39
US - Stati Uniti d'America 25
IN - India 14
TW - Taiwan 13
SG - Singapore 9
CN - Cina 4
HK - Hong Kong 4
JP - Giappone 4
BE - Belgio 2
DE - Germania 2
FI - Finlandia 2
FR - Francia 2
GR - Grecia 1
MX - Messico 1
NL - Olanda 1
Totale 123
Città #
Padova 25
Santa Clara 11
Chennai 7
Hsinchu 7
Singapore 7
Galliate Lombardo 5
Boardman 4
Delhi 4
Tokyo 4
Ma On Shan 3
Patna 3
Taichung 3
Taipei 3
Brussels 2
Fort Worth 2
Riese Pio X 2
Rome 2
Ashburn 1
Azzano Decimo 1
Chandler 1
Helsinki 1
Hong Kong 1
Lappeenranta 1
Legnago 1
Nijmegen 1
Seattle 1
Senftenberg 1
Totale 104
Nome #
Deep levels effects and on-wafer reliability of 0.15 um InAlN/GaN and InAlGaN/GaN HEMTs with AlGaN backbarrier for RF applications 89
Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects 13
Microwave and Millimeter-Wave GaN HEMTs: Impact of Epitaxial Structure on Short-Channel Effects, Electron Trapping, and Reliability 12
Dynamic Behavior of Threshold Voltage and ID–VDS Kink in AlGaN/GaN HEMTs Due to Poole–Frenkel Effect 11
Totale 125
Categoria #
all - tutte 671
article - articoli 277
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 948


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2022/202319 0 0 0 0 7 1 2 1 3 0 0 5
2023/202460 11 7 9 3 1 9 3 2 0 7 3 5
2024/202546 2 7 12 10 15 0 0 0 0 0 0 0
Totale 125