BORGA, MATTEO
 Distribuzione geografica
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Continente #
NA - Nord America 3.078
AS - Asia 2.168
EU - Europa 1.245
AF - Africa 342
SA - Sud America 263
OC - Oceania 25
Continente sconosciuto - Info sul continente non disponibili 16
Totale 7.137
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Nazione #
US - Stati Uniti d'America 2.902
SG - Singapore 611
CN - Cina 382
VN - Vietnam 335
HK - Hong Kong 254
IE - Irlanda 253
IT - Italia 229
BR - Brasile 156
IN - India 155
DE - Germania 106
FR - Francia 105
PL - Polonia 82
GB - Regno Unito 57
FI - Finlandia 44
RU - Federazione Russa 41
SE - Svezia 41
JP - Giappone 40
CA - Canada 38
AT - Austria 37
TR - Turchia 36
IQ - Iraq 34
NL - Olanda 32
BJ - Benin 29
KR - Corea 29
AR - Argentina 28
BD - Bangladesh 28
TW - Taiwan 26
ID - Indonesia 23
ES - Italia 21
CI - Costa d'Avorio 20
MX - Messico 20
UA - Ucraina 20
ZA - Sudafrica 20
BE - Belgio 18
PK - Pakistan 17
JM - Giamaica 16
EC - Ecuador 15
EG - Egitto 15
SA - Arabia Saudita 15
CH - Svizzera 14
CR - Costa Rica 14
KE - Kenya 14
PH - Filippine 14
AO - Angola 13
DZ - Algeria 13
KH - Cambogia 13
GR - Grecia 12
IR - Iran 12
KG - Kirghizistan 12
NP - Nepal 12
CO - Colombia 11
ET - Etiopia 11
MU - Mauritius 11
BO - Bolivia 10
BW - Botswana 10
CL - Cile 10
CU - Cuba 10
DO - Repubblica Dominicana 10
EE - Estonia 10
MA - Marocco 10
MG - Madagascar 10
RO - Romania 10
UY - Uruguay 10
YT - Mayotte 10
BG - Bulgaria 9
GM - Gambi 9
MW - Malawi 9
MY - Malesia 9
PT - Portogallo 9
TH - Thailandia 9
ZW - Zimbabwe 9
AU - Australia 8
CV - Capo Verde 8
DK - Danimarca 8
KZ - Kazakistan 8
NE - Niger 8
NI - Nicaragua 8
SN - Senegal 8
TZ - Tanzania 8
XK - ???statistics.table.value.countryCode.XK??? 8
AF - Afghanistan, Repubblica islamica di 7
AL - Albania 7
AZ - Azerbaigian 7
BY - Bielorussia 7
CW - ???statistics.table.value.countryCode.CW??? 7
DJ - Gibuti 7
HN - Honduras 7
IL - Israele 7
LU - Lussemburgo 7
LY - Libia 7
MK - Macedonia 7
NG - Nigeria 7
PE - Perù 7
PS - Palestinian Territory 7
SD - Sudan 7
TJ - Tagikistan 7
TN - Tunisia 7
UG - Uganda 7
VC - Saint Vincent e Grenadine 7
VE - Venezuela 7
Totale 6.891
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Città #
San Jose 366
Ashburn 350
Singapore 344
Fairfield 290
Dublin 251
Hong Kong 215
Chandler 150
Leesburg 138
Cambridge 126
Santa Clara 118
Woodbridge 118
Seattle 116
Houston 103
Ho Chi Minh City 102
Beijing 100
Ann Arbor 84
Wilmington 84
Hanoi 81
Bytom 66
Los Angeles 64
Bengaluru 63
Boardman 60
New York 52
Padova 47
Munich 46
Medford 32
Princeton 32
San Diego 30
Cotonou 29
Lauterbourg 29
Mumbai 29
Helsinki 26
Vienna 26
Des Moines 22
Orem 21
Milan 20
Tokyo 20
Abidjan 19
Atlanta 19
Nuremberg 19
São Paulo 19
Council Bluffs 17
Da Nang 17
Haiphong 17
Buffalo 16
London 16
Chennai 15
Hsinchu 15
Montreal 15
Baghdad 14
Nairobi 13
Nanjing 13
Turku 13
Guangzhou 12
Kingston 12
Phnom Penh 12
Warsaw 12
Bishkek 11
Luanda 11
San José 11
Stockholm 11
Chicago 10
Erbaa 10
Havana 10
Hefei 10
Hwaseong-si 10
Johannesburg 10
Rio de Janeiro 10
Brussels 9
Rome 9
Addis Ababa 8
Amsterdam 8
Athens 8
Harare 8
Lilongwe 8
Managua 8
Manchester 8
Niamey 8
Paris 8
Toronto 8
Antananarivo 7
Brooklyn 7
Bến Tre 7
Dakar 7
Dar es Salaam 7
Denver 7
Djibouti 7
Falls Church 7
Gaborone 7
Grenoble 7
Jeddah 7
Kampala 7
Kingstown 7
La Paz 7
Montevideo 7
Pristina 7
Redondo Beach 7
Salt Lake City 7
Shanghai 7
Tokat Province 7
Totale 4.507
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Nome #
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 447
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process 301
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 279
Characterization and modeling of GaN-based transistors for power applications 279
Degradation physics of GaN-based lateral and vertical devices 245
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment 243
Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications 242
Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment 238
Gate leakage mechanisms and their compact modeling in p-GaN gate AlGaN/GaN HEMTs 226
Power GaN HEMT degradation: From time-dependent breakdown to hot-electron effects 218
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices 213
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs 212
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs 207
Reliability and failure analysis in power GaN-HEMTs: An overview 204
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs) 203
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability 202
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis 198
Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate 198
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 191
Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs 188
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 185
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 181
High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps 170
Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs 160
The 2018 GaN power electronics roadmap 157
Physics-based trap analysis and compact modeling performance evaluation of AlGaN/GaN HEMTs 155
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs 152
Gallium Nitride power devices: challenges and perspectives 152
Trap parameter extraction and compact modeling of non-ideal dynamic performance in AlGaN/GaN HEMTs 150
Recent Advancements in Power GaN Reliability 141
Buffer-induced vertical leakage and charge trapping in normally-off GaN-on-Si HEMTs 138
Challenges towards highly reliable GaN power transistors 134
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors 130
Hot-electron trapping and luminescence in GaN-based GITs and HD-GITs: an extensive analysis 128
GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current 113
Threshold Voltage Variations in Semi-vertical GaN-on-Si FETs: A Comprehensive Study 112
Analysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrate 88
Totale 7.180
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Categoria #
all - tutte 18.978
article - articoli 7.271
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 26.249
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021102 0 0 0 0 0 0 0 0 0 0 75 27
2021/2022531 13 39 211 33 27 16 10 46 15 14 24 83
2022/2023460 52 12 13 26 89 38 27 48 64 11 40 40
2023/2024482 52 55 53 46 43 67 15 35 35 17 26 38
2024/20251.010 11 43 23 54 124 77 35 135 66 26 169 247
2025/20263.678 204 280 379 546 365 210 713 290 327 244 120 0
Totale 7.180