BORGA, MATTEO
 Distribuzione geografica
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Continente #
NA - Nord America 3.288
AS - Asia 2.210
EU - Europa 1.297
AF - Africa 346
SA - Sud America 266
Continente sconosciuto - Info sul continente non disponibili 59
OC - Oceania 25
Totale 7.491
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Nazione #
US - Stati Uniti d'America 3.085
SG - Singapore 615
CN - Cina 387
VN - Vietnam 335
IT - Italia 261
HK - Hong Kong 256
IE - Irlanda 253
BR - Brasile 158
IN - India 157
DE - Germania 106
FR - Francia 105
PL - Polonia 83
GB - Regno Unito 64
CA - Canada 53
BD - Bangladesh 48
FI - Finlandia 44
JP - Giappone 43
SE - Svezia 42
RU - Federazione Russa 41
AT - Austria 37
TR - Turchia 36
IQ - Iraq 34
NL - Olanda 33
BJ - Benin 29
KR - Corea 29
AR - Argentina 28
TW - Taiwan 26
BE - Belgio 23
ID - Indonesia 23
UA - Ucraina 22
ES - Italia 21
MX - Messico 21
CI - Costa d'Avorio 20
ZA - Sudafrica 20
CR - Costa Rica 18
JM - Giamaica 18
PK - Pakistan 18
PH - Filippine 16
EC - Ecuador 15
EG - Egitto 15
SA - Arabia Saudita 15
CH - Svizzera 14
KE - Kenya 14
AO - Angola 13
DZ - Algeria 13
GR - Grecia 13
KH - Cambogia 13
NP - Nepal 13
IR - Iran 12
KG - Kirghizistan 12
CL - Cile 11
CO - Colombia 11
ET - Etiopia 11
MU - Mauritius 11
MY - Malesia 11
BO - Bolivia 10
BW - Botswana 10
CU - Cuba 10
DO - Repubblica Dominicana 10
EE - Estonia 10
MA - Marocco 10
MG - Madagascar 10
RO - Romania 10
UY - Uruguay 10
YT - Mayotte 10
BG - Bulgaria 9
GM - Gambi 9
MW - Malawi 9
NI - Nicaragua 9
PT - Portogallo 9
TH - Thailandia 9
ZW - Zimbabwe 9
AU - Australia 8
CV - Capo Verde 8
DK - Danimarca 8
KZ - Kazakistan 8
NE - Niger 8
PR - Porto Rico 8
SN - Senegal 8
TZ - Tanzania 8
XK - ???statistics.table.value.countryCode.XK??? 8
AF - Afghanistan, Repubblica islamica di 7
AL - Albania 7
AZ - Azerbaigian 7
BY - Bielorussia 7
CW - ???statistics.table.value.countryCode.CW??? 7
CZ - Repubblica Ceca 7
DJ - Gibuti 7
HN - Honduras 7
IL - Israele 7
LU - Lussemburgo 7
LY - Libia 7
MK - Macedonia 7
NG - Nigeria 7
PE - Perù 7
PS - Palestinian Territory 7
SD - Sudan 7
TJ - Tagikistan 7
TN - Tunisia 7
UG - Uganda 7
Totale 7.193
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Città #
Ashburn 370
San Jose 368
Singapore 346
Fairfield 292
Dublin 251
Hong Kong 215
Chandler 150
Leesburg 138
Santa Clara 128
Cambridge 126
Woodbridge 118
Seattle 116
Houston 106
Ho Chi Minh City 102
Beijing 101
Ann Arbor 84
Wilmington 84
Hanoi 81
Los Angeles 72
Bytom 66
Bengaluru 64
Boardman 62
New York 59
Padova 47
Munich 46
Medford 32
Princeton 32
San Diego 30
Cotonou 29
Lauterbourg 29
Mumbai 29
Council Bluffs 27
Helsinki 26
Vienna 26
Atlanta 25
Orem 23
Des Moines 22
Milan 22
Tokyo 20
Abidjan 19
Montreal 19
Nuremberg 19
São Paulo 19
Buffalo 18
Da Nang 17
Haiphong 17
London 17
Dallas 16
Chennai 15
Hsinchu 15
Rome 15
Baghdad 14
Kingston 13
Nairobi 13
Nanjing 13
Turku 13
Warsaw 13
Guangzhou 12
Phnom Penh 12
San José 12
Stockholm 12
Bishkek 11
Denver 11
Luanda 11
Toronto 11
Chicago 10
Erbaa 10
Havana 10
Hefei 10
Hwaseong-si 10
Johannesburg 10
Rio de Janeiro 10
Amsterdam 9
Brussels 9
Managua 9
Addis Ababa 8
Athens 8
Brooklyn 8
Cagliari 8
Harare 8
Lilongwe 8
Manchester 8
Niamey 8
Paris 8
Antananarivo 7
Bến Tre 7
Cairo 7
Dakar 7
Dar es Salaam 7
Djibouti 7
Falls Church 7
Gaborone 7
Grenoble 7
Jeddah 7
Kampala 7
Kingstown 7
La Paz 7
Montevideo 7
Pristina 7
Redondo Beach 7
Totale 4.622
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Nome #
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 464
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process 305
Characterization and modeling of GaN-based transistors for power applications 289
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 288
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability 271
Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications 267
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment 250
Degradation physics of GaN-based lateral and vertical devices 248
Gate leakage mechanisms and their compact modeling in p-GaN gate AlGaN/GaN HEMTs 246
Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment 243
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices 222
Power GaN HEMT degradation: From time-dependent breakdown to hot-electron effects 221
Reliability and failure analysis in power GaN-HEMTs: An overview 220
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs 215
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs 212
Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate 205
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs) 205
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis 200
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 197
Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs 190
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 189
High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps 184
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 184
Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs 169
Physics-based trap analysis and compact modeling performance evaluation of AlGaN/GaN HEMTs 165
The 2018 GaN power electronics roadmap 164
Trap parameter extraction and compact modeling of non-ideal dynamic performance in AlGaN/GaN HEMTs 159
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs 157
Gallium Nitride power devices: challenges and perspectives 155
Recent Advancements in Power GaN Reliability 143
Buffer-induced vertical leakage and charge trapping in normally-off GaN-on-Si HEMTs 142
Challenges towards highly reliable GaN power transistors 138
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors 131
Hot-electron trapping and luminescence in GaN-based GITs and HD-GITs: an extensive analysis 129
GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current 118
Threshold Voltage Variations in Semi-vertical GaN-on-Si FETs: A Comprehensive Study 115
Analysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrate 91
Totale 7.491
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Categoria #
all - tutte 20.537
article - articoli 7.828
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 28.365
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022518 0 39 211 33 27 16 10 46 15 14 24 83
2022/2023460 52 12 13 26 89 38 27 48 64 11 40 40
2023/2024482 52 55 53 46 43 67 15 35 35 17 26 38
2024/20251.010 11 43 23 54 124 77 35 135 66 26 169 247
2025/20263.782 204 280 379 546 365 210 713 290 327 244 151 73
2026/2027207 179 28 0 0 0 0 0 0 0 0 0 0
Totale 7.491