BORGA, MATTEO
 Distribuzione geografica
Continente #
NA - Nord America 1.863
EU - Europa 582
AS - Asia 330
Continente sconosciuto - Info sul continente non disponibili 1
OC - Oceania 1
SA - Sud America 1
Totale 2.778
Nazione #
US - Stati Uniti d'America 1.854
IE - Irlanda 248
IT - Italia 163
CN - Cina 138
SG - Singapore 88
FR - Francia 51
IN - India 48
SE - Svezia 28
GB - Regno Unito 17
FI - Finlandia 16
HK - Hong Kong 16
DE - Germania 13
KR - Corea 13
UA - Ucraina 13
TW - Taiwan 12
CA - Canada 9
CH - Svizzera 7
RU - Federazione Russa 6
GR - Grecia 5
JP - Giappone 5
NL - Olanda 5
VN - Vietnam 5
AT - Austria 4
BE - Belgio 2
MY - Malesia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BR - Brasile 1
DK - Danimarca 1
IL - Israele 1
IQ - Iraq 1
LT - Lituania 1
NZ - Nuova Zelanda 1
PK - Pakistan 1
PL - Polonia 1
SI - Slovenia 1
Totale 2.778
Città #
Fairfield 289
Dublin 248
Chandler 150
Ashburn 143
Leesburg 138
Cambridge 126
Woodbridge 118
Seattle 113
Santa Clara 104
Houston 100
Ann Arbor 84
Wilmington 83
Singapore 69
Boardman 58
Beijing 50
Padova 42
Medford 32
Princeton 32
San Diego 30
Mumbai 24
Des Moines 22
Helsinki 16
New York 16
Milan 12
Nanjing 11
Hsinchu 10
Hwaseong-si 10
Atlanta 8
Bengaluru 7
Falls Church 7
Grenoble 7
London 7
Basel 6
Cagliari 6
Guangzhou 6
Ma On Shan 6
Dong Ket 5
Jinan 5
Kanpur 5
Kharkiv 5
Ottawa 5
Washington 5
Paris 4
Patna 4
Ranchi 4
Fuzhou 3
Hebei 3
Munich 3
Ningbo 3
Norwalk 3
Norwich 3
Shanghai 3
Shenyang 3
Azzano Decimo 2
Bologna 2
Central 2
Changsha 2
Daejeon 2
Hefei 2
Hong Kong 2
Jiaxing 2
Kobe 2
Kuala Lumpur 2
Legnago 2
McDonough 2
Rome 2
Roxbury 2
Sarcedo 2
Sissa 2
Taglio di Po 2
Turin 2
's-Hertogenbosch 1
Apeldoorn 1
Athens 1
Auckland 1
Baghdad 1
Borås 1
Carrollton 1
Central District 1
Chicago 1
Coventry 1
Dallas 1
Draveil 1
Enschede 1
Evanston 1
Faridabad 1
Frankfurt am Main 1
Gangnam-gu 1
Ghent 1
Haifa 1
Haikou 1
Hangzhou 1
Higashimukōjima 1
Hounslow 1
Karachi 1
Kolkata 1
Kowloon 1
Liestal 1
Los Angeles 1
Lucknow 1
Totale 2.321
Nome #
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 287
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process 148
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 148
Degradation physics of GaN-based lateral and vertical devices 124
Characterization and modeling of GaN-based transistors for power applications 113
Power GaN HEMT degradation: From time-dependent breakdown to hot-electron effects 102
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment 101
Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications 99
Reliability and failure analysis in power GaN-HEMTs: An overview 99
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis 97
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs 94
Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs 90
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs) 86
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability 84
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs 83
Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs 81
The 2018 GaN power electronics roadmap 78
Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate 74
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs 70
Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment 66
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices 57
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 56
Gallium Nitride power devices: challenges and perspectives 54
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors 51
Trap parameter extraction and compact modeling of non-ideal dynamic performance in AlGaN/GaN HEMTs 49
Recent Advancements in Power GaN Reliability 49
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 49
Challenges towards highly reliable GaN power transistors 47
Buffer-induced vertical leakage and charge trapping in normally-off GaN-on-Si HEMTs 47
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 46
Physics-based trap analysis and compact modeling performance evaluation of AlGaN/GaN HEMTs 40
Threshold Voltage Variations in Semi-vertical GaN-on-Si FETs: A Comprehensive Study 34
High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps 32
Hot-electron trapping and luminescence in GaN-based GITs and HD-GITs: an extensive analysis 32
Analysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrate 28
GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current 23
Totale 2.818
Categoria #
all - tutte 10.269
article - articoli 4.326
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 14.595


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020386 0 0 0 0 0 24 35 57 92 111 34 33
2020/2021387 12 34 11 14 1 4 30 106 36 37 75 27
2021/2022531 13 39 211 33 27 16 10 46 15 14 24 83
2022/2023460 52 12 13 26 89 38 27 48 64 11 40 40
2023/2024482 52 55 53 46 43 67 15 35 35 17 26 38
2024/2025326 11 43 23 54 124 71 0 0 0 0 0 0
Totale 2.818