BORGA, MATTEO
 Distribuzione geografica
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Continente #
NA - Nord America 2.187
EU - Europa 960
AS - Asia 782
AF - Africa 168
SA - Sud America 136
OC - Oceania 13
Continente sconosciuto - Info sul continente non disponibili 10
Totale 4.256
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Nazione #
US - Stati Uniti d'America 2.101
IE - Irlanda 249
SG - Singapore 248
IT - Italia 187
CN - Cina 171
HK - Hong Kong 125
DE - Germania 99
BR - Brasile 95
PL - Polonia 73
FR - Francia 63
IN - India 55
FI - Finlandia 34
SE - Svezia 34
AT - Austria 28
GB - Regno Unito 28
RU - Federazione Russa 28
KR - Corea 22
NL - Olanda 22
VN - Vietnam 22
TW - Taiwan 18
CI - Costa d'Avorio 14
UA - Ucraina 14
CA - Canada 13
JP - Giappone 11
GR - Grecia 10
BE - Belgio 9
DO - Repubblica Dominicana 9
JM - Giamaica 9
CH - Svizzera 8
DZ - Algeria 8
ZA - Sudafrica 8
AO - Angola 7
AR - Argentina 7
BO - Bolivia 7
CR - Costa Rica 7
CU - Cuba 7
ID - Indonesia 7
IR - Iran 7
KG - Kirghizistan 7
KH - Cambogia 7
MW - Malawi 7
NE - Niger 7
NP - Nepal 7
ZW - Zimbabwe 7
CV - Capo Verde 6
EC - Ecuador 6
IQ - Iraq 6
LU - Lussemburgo 6
MG - Madagascar 6
MU - Mauritius 6
MX - Messico 6
NG - Nigeria 6
PK - Pakistan 6
PT - Portogallo 6
SN - Senegal 6
TZ - Tanzania 6
AF - Afghanistan, Repubblica islamica di 5
AU - Australia 5
DJ - Gibuti 5
MA - Marocco 5
MK - Macedonia 5
PE - Perù 5
PS - Palestinian Territory 5
SD - Sudan 5
TR - Turchia 5
UG - Uganda 5
UY - Uruguay 5
XK - ???statistics.table.value.countryCode.XK??? 5
YT - Mayotte 5
BF - Burkina Faso 4
BG - Bulgaria 4
CW - ???statistics.table.value.countryCode.CW??? 4
CZ - Repubblica Ceca 4
EE - Estonia 4
EG - Egitto 4
GE - Georgia 4
IL - Israele 4
LT - Lituania 4
MD - Moldavia 4
ML - Mali 4
MR - Mauritania 4
MY - Malesia 4
NC - Nuova Caledonia 4
RO - Romania 4
SA - Arabia Saudita 4
VC - Saint Vincent e Grenadine 4
AE - Emirati Arabi Uniti 3
AL - Albania 3
AZ - Azerbaigian 3
BJ - Benin 3
BW - Botswana 3
BY - Bielorussia 3
BZ - Belize 3
CO - Colombia 3
CY - Cipro 3
DK - Danimarca 3
ES - Italia 3
GA - Gabon 3
GH - Ghana 3
GM - Gambi 3
Totale 4.153
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Città #
Fairfield 290
Dublin 249
Ashburn 227
Chandler 150
Singapore 143
Leesburg 138
Cambridge 126
Woodbridge 118
Seattle 114
Santa Clara 112
Hong Kong 109
Houston 100
Ann Arbor 84
Wilmington 83
Beijing 70
Bytom 66
Boardman 58
Padova 47
Munich 45
Medford 32
Princeton 32
San Diego 30
Mumbai 24
Des Moines 22
New York 22
Helsinki 20
Nuremberg 19
Vienna 18
Los Angeles 16
Milan 15
Abidjan 13
Buffalo 13
Hsinchu 13
Council Bluffs 11
Nanjing 11
Turku 11
Hwaseong-si 10
Atlanta 9
Hefei 9
London 9
São Paulo 9
Kingston 8
Bengaluru 7
Falls Church 7
Grenoble 7
Havana 7
Luanda 7
Niamey 7
Athens 6
Basel 6
Bishkek 6
Cagliari 6
Guangzhou 6
Harare 6
Ho Chi Minh City 6
Lilongwe 6
Ma On Shan 6
Phnom Penh 6
Rome 6
Chennai 5
Dakar 5
Dar es Salaam 5
Djibouti 5
Dong Ket 5
Guayaquil 5
Jinan 5
Kampala 5
Kanpur 5
Kharkiv 5
Luxembourg 5
Ottawa 5
Praia 5
Pristina 5
Redondo Beach 5
San José 5
Seoul 5
Warsaw 5
Washington 5
Baghdad 4
Bamako 4
Brooklyn 4
Falkenstein 4
Hanoi 4
Kingstown 4
Mamoudzou 4
Montevideo 4
Noumea 4
Paris 4
Patna 4
Ranchi 4
Santo Domingo 4
Stockholm 4
Accra 3
Antananarivo 3
Baku 3
Boston 3
Brussels 3
Charlotte 3
Cotonou 3
Fuzhou 3
Totale 2.988
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Nome #
Capture and emission time map to investigate the positive VTH shift in p-GaN power HEMTs 347
Degradation of GaN-HEMTs with p-GaN Gate: Dependence on temperature and on geometry 199
Characterization and modeling of GaN-based transistors for power applications 196
Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process 186
Degradation physics of GaN-based lateral and vertical devices 172
Power GaN HEMT degradation: From time-dependent breakdown to hot-electron effects 143
Reliability and failure analysis in power GaN-HEMTs: An overview 141
Analysis of threshold voltage instabilities in semi-vertical GaN-on-Si FETs 139
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis 136
Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications 136
Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment 134
Evidence of Time-Dependent Vertical Breakdown in GaN-on-Si HEMTs 132
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs) 120
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability 119
Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate 118
Impact of Substrate Resistivity on the Vertical Leakage, Breakdown, and Trapping in GaN-on-Si E-Mode HEMTs 117
Vertical leakage in GaN-on-Si stacks investigated by a buffer decomposition experiment 117
Hot-Electron Trapping and Hole-Induced Detrapping in GaN-Based GITs and HD-GITs 116
The 2018 GaN power electronics roadmap 106
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices 101
Degradation of GaN-Based Lateral and Vertical Devices—Challenges and Perspectives 101
Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs 98
Reliability and Dynamic Performance of Gallium Nitride-based Devices for Power Applications 97
Reliability Issues in Lateral and Vertical GaN FETs for Power Electronics 94
Physics-based trap analysis and compact modeling performance evaluation of AlGaN/GaN HEMTs 89
Gallium Nitride power devices: challenges and perspectives 88
High-Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps 85
Recent Advancements in Power GaN Reliability 84
Buffer-induced vertical leakage and charge trapping in normally-off GaN-on-Si HEMTs 84
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors 84
Challenges towards highly reliable GaN power transistors 83
Trap parameter extraction and compact modeling of non-ideal dynamic performance in AlGaN/GaN HEMTs 81
Threshold Voltage Variations in Semi-vertical GaN-on-Si FETs: A Comprehensive Study 68
GaN-on-Silicon buffer decomposition experiment: analysis of the vertical leakage current 67
Hot-electron trapping and luminescence in GaN-based GITs and HD-GITs: an extensive analysis 62
Analysis of the drain-to-substrate leakage of power HEMTs grown on highly resistive silicon substrate 56
Gate leakage mechanisms and their compact modeling in p-GaN gate AlGaN/GaN HEMTs 3
Totale 4.299
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Categoria #
all - tutte 14.213
article - articoli 5.611
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 19.824
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021341 0 0 11 14 1 4 30 106 36 37 75 27
2021/2022531 13 39 211 33 27 16 10 46 15 14 24 83
2022/2023460 52 12 13 26 89 38 27 48 64 11 40 40
2023/2024482 52 55 53 46 43 67 15 35 35 17 26 38
2024/20251.010 11 43 23 54 124 77 35 135 66 26 169 247
2025/2026797 204 280 313 0 0 0 0 0 0 0 0 0
Totale 4.299