DALCANALE, STEFANO
 Distribuzione geografica
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Continente #
NA - Nord America 1.154
AS - Asia 610
EU - Europa 327
AF - Africa 113
SA - Sud America 78
OC - Oceania 9
Continente sconosciuto - Info sul continente non disponibili 4
Totale 2.295
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Nazione #
US - Stati Uniti d'America 1.093
CN - Cina 269
SG - Singapore 169
IT - Italia 82
BR - Brasile 39
HK - Hong Kong 34
PL - Polonia 32
DE - Germania 24
FI - Finlandia 23
VN - Vietnam 23
SE - Svezia 16
CI - Costa d'Avorio 15
FR - Francia 13
GB - Regno Unito 13
NL - Olanda 12
RU - Federazione Russa 11
UA - Ucraina 9
IN - India 8
SA - Arabia Saudita 8
JP - Giappone 7
SO - Somalia 7
ZA - Sudafrica 7
AT - Austria 6
CA - Canada 6
CL - Cile 6
DJ - Gibuti 6
LC - Santa Lucia 6
ME - Montenegro 6
NO - Norvegia 6
NP - Nepal 6
RO - Romania 6
TJ - Tagikistan 6
TW - Taiwan 6
AR - Argentina 5
EC - Ecuador 5
HR - Croazia 5
HU - Ungheria 5
ID - Indonesia 5
IR - Iran 5
KZ - Kazakistan 5
LU - Lussemburgo 5
PE - Perù 5
TH - Thailandia 5
TN - Tunisia 5
TR - Turchia 5
YT - Mayotte 5
BA - Bosnia-Erzegovina 4
BE - Belgio 4
BW - Botswana 4
CR - Costa Rica 4
CZ - Repubblica Ceca 4
GF - Guiana Francese 4
MR - Mauritania 4
MW - Malawi 4
PA - Panama 4
PK - Pakistan 4
SK - Slovacchia (Repubblica Slovacca) 4
SN - Senegal 4
TZ - Tanzania 4
AD - Andorra 3
AE - Emirati Arabi Uniti 3
AZ - Azerbaigian 3
BJ - Benin 3
BO - Bolivia 3
BZ - Belize 3
CU - Cuba 3
CY - Cipro 3
DO - Repubblica Dominicana 3
EG - Egitto 3
GR - Grecia 3
GT - Guatemala 3
IS - Islanda 3
KG - Kirghizistan 3
KH - Cambogia 3
KY - Cayman, isole 3
MA - Marocco 3
MD - Moldavia 3
MG - Madagascar 3
MK - Macedonia 3
MQ - Martinica 3
MU - Mauritius 3
MX - Messico 3
MY - Malesia 3
PS - Palestinian Territory 3
PT - Portogallo 3
PY - Paraguay 3
RS - Serbia 3
TL - Timor Orientale 3
TT - Trinidad e Tobago 3
UY - Uruguay 3
UZ - Uzbekistan 3
VC - Saint Vincent e Grenadine 3
VE - Venezuela 3
YE - Yemen 3
ZW - Zimbabwe 3
AF - Afghanistan, Repubblica islamica di 2
AM - Armenia 2
AO - Angola 2
BB - Barbados 2
BF - Burkina Faso 2
Totale 2.215
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Città #
Woodbridge 149
Ashburn 145
Fairfield 141
Ann Arbor 87
Singapore 76
Houston 65
Seattle 61
Cambridge 43
Chandler 42
Santa Clara 40
Wilmington 38
Hong Kong 33
Boardman 29
Bytom 26
Beijing 23
Abidjan 15
Los Angeles 15
Medford 15
Princeton 15
San Diego 15
Des Moines 14
Ho Chi Minh City 12
Roxbury 12
Guangzhou 11
Nanjing 11
Washington 11
Helsinki 9
Munich 9
Council Bluffs 8
Cagliari 6
Castries 6
Dushanbe 6
Jinan 6
Milan 6
Johannesburg 5
New York 5
Padova 5
Podgorica 5
Rome 5
Secaucus 5
Changsha 4
Dakar 4
Dar es Salaam 4
Djibouti 4
Naples 4
Nouakchott 4
Oslo 4
Panama City 4
Riyadh 4
San Jose 4
Tianjin 4
Vienna 4
Andorra la Vella 3
Antananarivo 3
Bishkek 3
Cayenne 3
Chicago 3
Cotonou 3
Dili 3
Falkenstein 3
Gaborone 3
George Town 3
Hangzhou 3
Hanoi 3
Harare 3
Hargeisa 3
Havana 3
Hefei 3
Hsinchu 3
Istanbul 3
Lilongwe 3
Lima 3
Luxembourg 3
Montevideo 3
Redondo Beach 3
San José 3
Sanaa 3
Santiago 3
Shanghai 3
São Paulo 3
Tehran 3
Tokyo 3
Wuhan 3
Wuxi 3
Zagreb 3
Zhengzhou 3
Abu Dhabi 2
Accra 2
Amsterdam 2
Astana 2
Asunción 2
Baku 2
Bamako 2
Bangkok 2
Beauvechain 2
Belgrade 2
Belo Horizonte 2
Biên Hòa 2
Borama 2
Borås 2
Totale 1.408
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Nome #
Reliability analysis of GaN HEMT for space applications and switching converters based on advanced experimental techniques and two dimensional device simulations 378
Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs 179
Proton induced trapping effect on space compatible GaN HEMTs 176
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift 151
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors 149
Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate 149
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure 143
Intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices : An industry perspective 138
Temperature-dependent dynamic RON in GaN-based MIS-HEMTs: Role of surface traps and buffer leakage 135
Experimental demonstration of weibull distributed failure in p-type GaN high electron mobility transistors under high forward bias stress 135
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 130
Reliability of Gallium Nitride microwave transistors: A framework for the evaluation of failure mechanisms and instabilities, from accelerated testing to failure analysis and process improvement 128
Failure signatures on 0.25 mu m GaN HEMTs for high-power RF applications 123
Reliability improvement of AlGaN/GaN HEMTs for space applications 100
Simple technique for failure modes detection on high-performances space designed GaN HEMTs 96
Totale 2.310
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Categoria #
all - tutte 7.300
article - articoli 3.006
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 10.306
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202187 0 0 0 0 0 5 4 14 11 9 38 6
2021/2022221 1 44 14 12 20 8 9 23 15 11 18 46
2022/2023140 24 1 2 13 32 19 2 7 15 5 16 4
2023/2024211 13 4 20 10 23 43 17 21 18 14 12 16
2024/2025468 16 21 22 27 51 41 19 40 34 10 86 101
2025/2026665 62 102 169 181 147 4 0 0 0 0 0 0
Totale 2.310