DALCANALE, STEFANO
 Distribuzione geografica
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Continente #
NA - Nord America 1.545
AS - Asia 1.069
EU - Europa 418
AF - Africa 129
SA - Sud America 114
Continente sconosciuto - Info sul continente non disponibili 19
OC - Oceania 9
Totale 3.303
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Nazione #
US - Stati Uniti d'America 1.474
CN - Cina 530
SG - Singapore 235
IT - Italia 124
VN - Vietnam 66
BR - Brasile 59
HK - Hong Kong 41
FR - Francia 34
PL - Polonia 33
DE - Germania 27
IN - India 26
FI - Finlandia 23
GB - Regno Unito 19
SE - Svezia 18
NL - Olanda 16
BD - Bangladesh 15
CI - Costa d'Avorio 15
CA - Canada 13
RU - Federazione Russa 12
TR - Turchia 12
SA - Arabia Saudita 11
UA - Ucraina 10
ZA - Sudafrica 10
CL - Cile 9
ID - Indonesia 9
JP - Giappone 9
PK - Pakistan 9
EC - Ecuador 8
ME - Montenegro 7
NP - Nepal 7
SO - Somalia 7
TH - Thailandia 7
TW - Taiwan 7
AR - Argentina 6
AT - Austria 6
CO - Colombia 6
DJ - Gibuti 6
HU - Ungheria 6
IQ - Iraq 6
LC - Santa Lucia 6
NO - Norvegia 6
PY - Paraguay 6
RO - Romania 6
TJ - Tagikistan 6
UZ - Uzbekistan 6
AE - Emirati Arabi Uniti 5
AO - Angola 5
BA - Bosnia-Erzegovina 5
BE - Belgio 5
CR - Costa Rica 5
CZ - Repubblica Ceca 5
ES - Italia 5
HR - Croazia 5
IR - Iran 5
JO - Giordania 5
KZ - Kazakistan 5
LU - Lussemburgo 5
PE - Perù 5
SN - Senegal 5
TN - Tunisia 5
VE - Venezuela 5
YT - Mayotte 5
AZ - Azerbaigian 4
BW - Botswana 4
EG - Egitto 4
GF - Guiana Francese 4
MA - Marocco 4
MR - Mauritania 4
MW - Malawi 4
MY - Malesia 4
PA - Panama 4
PS - Palestinian Territory 4
RS - Serbia 4
SK - Slovacchia (Repubblica Slovacca) 4
TZ - Tanzania 4
AD - Andorra 3
BJ - Benin 3
BO - Bolivia 3
BZ - Belize 3
CU - Cuba 3
CY - Cipro 3
DO - Repubblica Dominicana 3
EE - Estonia 3
GM - Gambi 3
GR - Grecia 3
GT - Guatemala 3
HN - Honduras 3
IS - Islanda 3
KE - Kenya 3
KG - Kirghizistan 3
KH - Cambogia 3
KY - Cayman, isole 3
MD - Moldavia 3
MG - Madagascar 3
MK - Macedonia 3
MQ - Martinica 3
MU - Mauritius 3
MX - Messico 3
PT - Portogallo 3
SC - Seychelles 3
Totale 3.186
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Città #
San Jose 212
Ashburn 194
Woodbridge 149
Fairfield 141
Singapore 131
Ann Arbor 87
Houston 66
Seattle 61
Cambridge 43
Santa Clara 43
Chandler 42
Hong Kong 38
Wilmington 38
Beijing 34
Council Bluffs 33
Boardman 29
Bytom 26
Los Angeles 24
Ho Chi Minh City 23
Guangzhou 19
Rome 19
Hanoi 16
Abidjan 15
Medford 15
Princeton 15
San Diego 15
Des Moines 14
Lauterbourg 14
Shanghai 14
Washington 14
Nanjing 13
Roxbury 12
Milan 11
Helsinki 9
Munich 9
New York 9
Jinan 7
Orem 7
Shenzhen 7
São Paulo 7
Tianjin 7
Bengaluru 6
Cagliari 6
Castries 6
Dushanbe 6
Johannesburg 6
Naples 6
Podgorica 6
Wuhan 6
Albignasego 5
Amsterdam 5
Changsha 5
Chennai 5
Chicago 5
Dakar 5
Dallas 5
Hefei 5
Padova 5
Riyadh 5
Santiago 5
Secaucus 5
Tashkent 5
Tokyo 5
Toronto 5
Xi'an 5
Amman 4
Atlanta 4
Brooklyn 4
Da Nang 4
Dar es Salaam 4
Djibouti 4
Hangzhou 4
Karachi 4
Luanda 4
Nouakchott 4
Oslo 4
Palermo 4
Panama City 4
San José 4
Suzhou 4
Vienna 4
Wuxi 4
Andorra la Vella 3
Ankara 3
Antananarivo 3
Baghdad 3
Bangkok 3
Belo Horizonte 3
Bishkek 3
Cayenne 3
Cotonou 3
Dili 3
Falkenstein 3
Gaborone 3
George Town 3
Harare 3
Hargeisa 3
Havana 3
Hsinchu 3
Istanbul 3
Totale 1.932
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Nome #
Reliability analysis of GaN HEMT for space applications and switching converters based on advanced experimental techniques and two dimensional device simulations 723
Proton induced trapping effect on space compatible GaN HEMTs 236
Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs 234
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift 203
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors 201
Temperature-dependent dynamic RON in GaN-based MIS-HEMTs: Role of surface traps and buffer leakage 195
Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate 182
Failure signatures on 0.25 mu m GaN HEMTs for high-power RF applications 180
Intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices : An industry perspective 179
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure 178
Reliability of Gallium Nitride microwave transistors: A framework for the evaluation of failure mechanisms and instabilities, from accelerated testing to failure analysis and process improvement 174
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 173
Experimental demonstration of weibull distributed failure in p-type GaN high electron mobility transistors under high forward bias stress 172
Reliability improvement of AlGaN/GaN HEMTs for space applications 137
Simple technique for failure modes detection on high-performances space designed GaN HEMTs 136
Totale 3.303
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Categoria #
all - tutte 9.330
article - articoli 3.832
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 13.162
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022220 0 44 14 12 20 8 9 23 15 11 18 46
2022/2023140 24 1 2 13 32 19 2 7 15 5 16 4
2023/2024211 13 4 20 10 23 43 17 21 18 14 12 16
2024/2025468 16 21 22 27 51 41 19 40 34 10 86 101
2025/20261.590 62 102 169 181 147 114 238 185 176 122 81 13
2026/202768 36 32 0 0 0 0 0 0 0 0 0 0
Totale 3.303