DALCANALE, STEFANO
 Distribuzione geografica
Continente #
NA - Nord America 948
AS - Asia 258
EU - Europa 126
SA - Sud America 6
OC - Oceania 1
Totale 1.339
Nazione #
US - Stati Uniti d'America 947
CN - Cina 201
IT - Italia 44
SG - Singapore 39
FI - Finlandia 20
SE - Svezia 14
FR - Francia 9
GB - Regno Unito 8
BR - Brasile 6
DE - Germania 6
IN - India 6
NL - Olanda 5
RU - Federazione Russa 4
SA - Arabia Saudita 4
TW - Taiwan 3
BE - Belgio 2
CZ - Repubblica Ceca 2
IE - Irlanda 2
UA - Ucraina 2
AT - Austria 1
BG - Bulgaria 1
CH - Svizzera 1
FJ - Figi 1
HK - Hong Kong 1
ID - Indonesia 1
IR - Iran 1
JP - Giappone 1
LT - Lituania 1
ME - Montenegro 1
MX - Messico 1
MY - Malesia 1
NO - Norvegia 1
PL - Polonia 1
RO - Romania 1
Totale 1.339
Città #
Woodbridge 149
Fairfield 141
Ashburn 106
Ann Arbor 87
Houston 63
Seattle 60
Cambridge 43
Chandler 42
Wilmington 38
Santa Clara 34
Singapore 29
Boardman 26
Medford 15
Princeton 15
San Diego 15
Des Moines 14
Roxbury 12
Nanjing 11
Washington 11
Beijing 9
Guangzhou 8
Helsinki 8
Cagliari 6
Jinan 6
Padova 5
Changsha 4
Tianjin 4
Hangzhou 3
Riyadh 3
Shanghai 3
Wuhan 3
Zhengzhou 3
Beauvechain 2
Borås 2
Dublin 2
Hebei 2
Hyderabad 2
Indiana 2
Milan 2
Nanchang 2
Ningbo 2
Omegna 2
Palermo 2
Raichur 2
Tappahannock 2
Xi'an 2
Bengaluru 1
Catanzaro 1
Chongqing 1
Concord 1
Cormeilles-en-Parisis 1
Curitiba 1
Delhi 1
Edinburgh 1
Foz do Iguaçu 1
Fuyang 1
Ganzhou 1
Green River 1
Haikou 1
Hsinchu 1
Islington 1
Jakarta 1
Jiaxing 1
Kashan 1
Kharkiv 1
Kunming 1
Lanzhou 1
Leawood 1
Luoyang 1
Manaus 1
Messina 1
Mexico City 1
Mountain View 1
Natal 1
Nuremberg 1
Ogden 1
Oklahoma City 1
Orange 1
Oslo 1
Palo Alto 1
Podgorica 1
Prescot 1
Putian 1
Ravenna 1
Roermond 1
Rome 1
Sesto Calende 1
Shenyang 1
Sofia 1
Somma Vesuviana 1
Suva 1
Taipei 1
Taizhou 1
Tokyo 1
Torrance 1
Tupã 1
Vienna 1
Vilnius 1
Vitória 1
Wuxi 1
Totale 1.058
Nome #
Reliability analysis of GaN HEMT for space applications and switching converters based on advanced experimental techniques and two dimensional device simulations 241
Time-Dependent Failure of GaN-on-Si Power HEMTs With p-GaN Gate 108
Proton induced trapping effect on space compatible GaN HEMTs 107
Evidence of Hot-Electron Effects during Hard Switching of AlGaN/GaN HEMTs 104
Intrinsic reliability assessment of 650V rated AlGaN/GaN based power devices : An industry perspective 91
GaN-based MIS-HEMTs: Impact of cascode-mode high temperature source current stress on NBTI shift 85
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure 84
A comprehensive reliability evaluation of high-performance AlGaN/GaN HEMTs for space applications 82
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors 79
Experimental demonstration of weibull distributed failure in p-type GaN high electron mobility transistors under high forward bias stress 76
Temperature-dependent dynamic RON in GaN-based MIS-HEMTs: Role of surface traps and buffer leakage 71
Reliability of Gallium Nitride microwave transistors: A framework for the evaluation of failure mechanisms and instabilities, from accelerated testing to failure analysis and process improvement 70
Failure signatures on 0.25 mu m GaN HEMTs for high-power RF applications 64
Reliability improvement of AlGaN/GaN HEMTs for space applications 58
Simple technique for failure modes detection on high-performances space designed GaN HEMTs 34
Totale 1.354
Categoria #
all - tutte 4.978
article - articoli 2.082
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.060


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020108 0 0 0 0 0 12 17 22 22 18 16 1
2020/2021132 8 5 4 20 8 5 4 14 11 9 38 6
2021/2022221 1 44 14 12 20 8 9 23 15 11 18 46
2022/2023140 24 1 2 13 32 19 2 7 15 5 16 4
2023/2024211 13 4 20 10 23 43 17 21 18 14 12 16
2024/2025177 16 21 22 27 51 40 0 0 0 0 0 0
Totale 1.354