BERTI, MARINA
 Distribuzione geografica
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Continente #
NA - Nord America 6.563
EU - Europa 659
AS - Asia 614
OC - Oceania 2
Continente sconosciuto - Info sul continente non disponibili 1
Totale 7.839
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Nazione #
US - Stati Uniti d'America 6.559
CN - Cina 325
SG - Singapore 185
FI - Finlandia 168
DE - Germania 117
UA - Ucraina 105
SE - Svezia 75
IN - India 68
FR - Francia 62
GB - Regno Unito 58
IT - Italia 57
VN - Vietnam 30
IE - Irlanda 8
RU - Federazione Russa 5
CA - Canada 4
BG - Bulgaria 2
IR - Iran 2
UZ - Uzbekistan 2
AU - Australia 1
CH - Svizzera 1
EU - Europa 1
ID - Indonesia 1
KR - Corea 1
NL - Olanda 1
NZ - Nuova Zelanda 1
Totale 7.839
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Città #
Fairfield 1.072
Woodbridge 933
Houston 652
Jacksonville 533
Ann Arbor 520
Ashburn 442
Seattle 431
Wilmington 393
Cambridge 324
Chandler 316
Princeton 185
Singapore 150
San Diego 123
Beijing 82
Nanjing 64
Helsinki 59
Boardman 47
Medford 44
Guangzhou 31
Santa Clara 31
Dong Ket 30
Hebei 27
Shenyang 24
Des Moines 23
London 19
Jiaxing 18
Norwalk 17
Nanchang 16
Roxbury 15
Tianjin 15
Pune 10
Padova 9
Changsha 8
Mestre 8
Milan 8
Dublin 7
Venice 7
Dallas 6
Ogden 6
Redwood City 6
Falls Church 5
Indiana 5
Kharkiv 5
New Bedfont 5
Bangalore 4
Borås 4
Chiswick 4
Gorizia 4
Jinan 4
New York 4
Shanghai 4
Acton 3
Rockville 3
Suri 3
Ardabil 2
Castenaso 2
Chicago 2
Hounslow 2
Kilburn 2
Las Vegas 2
Munich 2
Prescot 2
San Francisco 2
Sofia 2
Tashkent 2
Zhengzhou 2
Berlin 1
Bulach 1
Cervia 1
Christchurch 1
Edinburgh 1
Frankfurt am Main 1
Fuzhou 1
Gatchina 1
Groningen 1
Hangzhou 1
Hefei 1
High Wycombe 1
Incheon 1
Jakarta 1
Leawood 1
Los Angeles 1
Marburg 1
Mumbai 1
Ningbo 1
Nürnberg 1
Omsk 1
Ottawa 1
Pinehaven 1
Regina 1
Rome 1
Saint Petersburg 1
Santa Lucia Di Piave 1
Sligo 1
Sydney 1
Tampere 1
Tappahannock 1
Trento 1
Turin 1
Wandsworth 1
Totale 6.826
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Nome #
Strong deviation of the lattice parameter in Si1-x-yGexCy epilayers from Vegard's rule 125
X-ray absorption and diffraction study of II-VI dilute oxide semiconductor alloy epilayers 125
12C(α,α)12C resonant elastic scattering at 5.7 MeV as a tool for carbon quantification in silicon-based heterostructures 111
Photocurrent spectroscopy of GaN and AlGaN epilayers grown on 6H (0001) silicon carbide 108
Hydrogen diffusion in GaAs1-xNx 106
Channeling effects in high energy ion implantation: Si(N) 104
Formation and dissolution of D-N complexes in dilute nitrides 102
Mechanisms of strain release in molecular-beam epitaxy-grown InGaAs/GaAs buffer heterostructures 101
Crack formation in tensile InGaAS/InP layers 100
Low pressure MOVPE growth and structural properties of ZnMgSe epilayers on (100)GaAs 99
Determination of lattice parameter and of N lattice location in InxGa1-xNyAs1-y/GaAs and GaNyAs1-y/GaAs epilayers 98
Electron and ion-beam analysis of composition and strain in Si1-xGex Si heterostructures 97
Transformation To Amorphous State of Metals By Ion-implantation - P In Ni 97
Matrix Atomic Losses and Oxygen Incorporation Under Ruby-laser Irradiation of Silicon In Gaseous Atmospheres 96
Transition from island to continuous InP layer growth on (001)GaAs by MOCVD 96
PRODUCTION AND CHARACTERIZATION OF QUANTUM NANOSTRUCTURES OF EPITAXIAL SEMICONDUCTORS 95
Structural study of the influence of different growth parameters on the quality of InxGa1-xN/GaN films grown by MOCVD 95
Self Annealing Effects In P+ Implanted Silicon 94
Boron-interstitial clusters in crystalline silicon: stoichiometry and strain 92
Diffusion of ion beam injected self-interstitial defects in silicon layers grown by molecular beam epitaxy 91
Explosive Crystallization of Dilute Amorphous Si-ge Alloys 90
Role of C in the formation and kinetics of nanovoids induced by He+ implantation in Si 89
Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping 89
Nitrogen-induced hindering of In incorporation in InGaAsN 89
Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection 88
Strain relaxation of SiGe in a Si/SiGe/Si heterostructure under proton irradiation 88
InP/GaAs self-assembled nanostructures: Modelization and experiment 87
Measurement of aluminum concentration in the Ga1-xAlxSb/GaSb epitaxial system 87
Defects in Ge caused by sub-amorphizing self-implantation: Formation and dissolution 87
Structural and electronic properties of wide band gap Zn1-xMgxSe alloys 86
Static and dynamic screening of the polarization fields in nitride nanostructures: a theoretical and experimental study 84
Correlation between defects, residual strain and morphology in continuously graded InGaAs/GaAs buffers 84
Substitutional B in Si: Accurate lattice parameter determination 84
Matrix effects in SIMS depth profiles of SiGe relaxed buffer layers 83
Local structure of nitrogen-hydrogen complexes in dilute nitrides 82
Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping 81
Local lattice distortion in Si1-x-yGexCy epitaxial layers from x-ray absorption fine structure 81
Mechanism of Ion Induced Amorphization 81
Diffusion and clustering of supersaturated carbon in SiGeC layers under oxidation 80
Lattice parameter in Si1-yCy epilayers: deviation from Vegard's rule 80
Evidence for a new hydrogen complex in dilute nitride alloys 80
Stranski-Krastanow MOVPE growth of nanoscale ZnTe islands on (0 0 1)GaAs 78
Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDsGallium Nitride Materials and Devices VIII 78
Effect of hydrogen incorporation temperature in in plane-engineered GaAsN/GaAsN.H heterostructures 77
Dose-rate Effects On the Dynamic Annealing Mechanism In P+-implanted Silicon 77
12C(a,a)12C resonant elastic scattering at 5.72 MeV as a tool for carbon quantification in Silicon-based heterostructures 77
Composition control of GaSbAs alloys 76
Metastability of Si1-yCy epilayers under 2 MeV alpha particle irradiation 76
Determination of selenium in blood serum by proton-induced X-ray emission. 76
Structural characterization techniques for the analysis of semiconductor strained heterostructures 76
'Experimental Evidence of 2D-3D transition in the Stranski-Krastanow coherent growth' 75
Composition and structure of Si-Ge layers produced by ion implantation and laser melting 75
On the Dynamic Annealing Mechanism In P+-implanted Silicon 75
Self-interstitials and substitutional C in silicon: Interstitial- trapping and C- clustering 74
Influence of the N2/H2 ratio on the structural features of InxGa1-xN/GaN films grown by MOCVD 74
Lattice parameter of Si1-x-yGexCy alloys 73
Diffusion enhanced carbon loss from SiGeC layers due to oxidation 73
Assessment of Vegard's law validity in the Ga1-xAlxSb/GaSb epitaxial System 73
Silicon Loss During Tisi2 Formation 73
Electronic structure and morphology of SiC films grown on Si(111) using C-60 as a precursor 73
Substitutional and clustered B in ion implanted Ge: Strain determination 72
Influence of Channeling Effects On Ion Distribution and Damage Profiles During High-energy Ion-implantation In Si 72
Hydrogen-nitrogen complexes in dilute nitride alloys: origin of the compressive strain 70
Titanium silicide formation: Effect of oxygen distribution in the metal film 70
Carbon diffusion and clustering in SiGeC layers under thermal oxidation 70
Suppression of boron transient enhanced diffusion by C trapping 67
Ion beam characterization of Fe implanted GaN 66
A systematic investigation of strain relaxation, surface morphology and defects in tensile and compressive InGaAs/InP layers 66
Localization of He induced nanovoids in buried Si1-xGex thin films 66
Interaction between self-interstitials and substitutional C in silicon: Interstitial trapping and C clustering mechanism 65
Transient Annealing As A Tool For the Investigation of Thin-film Substrate Solid-phase Reactions 65
Pre-amorphization Damage Study In As-implanted Silicon 65
Self-organized growth of ZnTe nanoscale islands on 001 GaAs 65
On the contribution of secondary fluorescence to the Fe signal in proton-induced X-ray emission channeling measurements of Fe-doped GaN 64
Influence of Channeling Effects On Ion Distribution and Damage Profiles During High-energy Ion-implantation In Si 64
Thermal evolution of small N-D complexes in deuterated dilute nitrides revealed by in-situ high resolution X-ray diffraction 63
Behaviour of metastable Si/sub 1 y/C/sub y/ epilayers under 2 MeV alpha particles irradiation 63
Physicochemical Properties of Photo-cvd Silicon-nitride Thin-films 63
New insight on the interaction and diffusion properties of ion beam injected self-interstitials in crystalline silicon 63
Recent developments of the RBS technique for the analysis of semiconductor nanostructures 62
Transmission electron microscopy, high-resolution X-ray diffraction and Rutherford backscattering study of strain release in InGaAs/GaAs buffer layers 62
Influence of As incorporation on the deviation from Vegard's law in the AlxGa1-xSb/GaSb system 60
Microscopic origin of compressive strain in hydrogen-irradiated dilute GaAs_{1−y}N_{y} alloys: Role of N-H_{n} centers with n>2 and their thermal stability 60
Silicon interstitial driven loss of substitutional carbon from SiGeC structures 59
Broad-area optical characterization of well-width homogeneity inGaN/AlxGa1-xN multiple quantum wells grown on sapphire wafers 59
High resolution X-ray diffraction in situ study of very small complexes: the case of hydrogenated dilute nitrides 58
Lattice Stress and Electrically Active Defects Induced By Ion Channeling In the Initial Layers of Iii-v Compounds 57
Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes 57
Charge storage and screening of the internal field in GaN/AlGaN quantum wells 56
Optical and transport properties of GaN/Al0.15Ga0.85N quantum wells 54
The thermal corrosion of ion-implanted zirconium 54
Self interstitials diffusion and clustering with impurities in crystalline silicon 52
Bond-length variation in InxGa1-xAs/InP strained epitaxial layers (vol 57, pg 14 619, 1998) 51
Experimental evidence of two-dimensional-three-dimensional transition in the Stranski-Krastanow coherent growth 50
Ferromagnetism in ion implanted amorphous and nanocrystalline MnxGe1-x 49
Growth and structure of titanium silicide phases formed by thin Ti films on Si crystals 48
Structural characterization and stability of Si1-xGex/Si(100) heterostructures grown by molecular beam heteroepitaxy 47
Bond-length variation in InxGa1-xAs/InP strained epitaxial layers 47
Behaviour of metastable si1-yCy epilayers under 2 MeV alpha particles irradiation 43
Strain relaxation under compressive or tensile stress 41
Totale 7.626
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Categoria #
all - tutte 28.485
article - articoli 24.945
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 123
Totale 53.553
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20201.408 0 0 0 105 185 155 157 221 179 179 136 91
2020/20211.196 47 90 14 102 92 174 22 104 224 87 165 75
2021/20221.200 18 105 230 84 61 63 40 146 77 22 158 196
2022/2023774 192 47 8 77 155 97 0 55 103 0 29 11
2023/2024326 19 65 27 28 21 23 10 9 14 16 53 41
2024/2025269 2 142 70 55 0 0 0 0 0 0 0 0
Totale 7.857