SILVESTRI, RICCARDO
 Distribuzione geografica
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Continente #
NA - Nord America 1.373
AS - Asia 134
EU - Europa 94
Continente sconosciuto - Info sul continente non disponibili 2
SA - Sud America 1
Totale 1.604
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Nazione #
US - Stati Uniti d'America 1.372
CN - Cina 87
SG - Singapore 41
FI - Finlandia 33
GB - Regno Unito 13
FR - Francia 11
SE - Svezia 11
DE - Germania 8
IT - Italia 6
RU - Federazione Russa 4
IE - Irlanda 3
UA - Ucraina 3
EU - Europa 2
HK - Hong Kong 2
KR - Corea 2
BG - Bulgaria 1
BR - Brasile 1
CA - Canada 1
CH - Svizzera 1
JP - Giappone 1
TW - Taiwan 1
Totale 1.604
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Città #
Fairfield 236
Woodbridge 209
Ann Arbor 123
Houston 119
Ashburn 111
Seattle 103
Cambridge 88
Wilmington 71
Santa Clara 60
Chandler 50
Singapore 33
Boardman 25
Beijing 22
San Diego 22
Medford 19
Princeton 19
Helsinki 14
Nanjing 13
Des Moines 11
Jacksonville 8
Padova 5
Roxbury 5
Washington 5
Guangzhou 4
London 4
Zhengzhou 4
Dublin 3
Jiaxing 3
Jinan 3
Kharkiv 3
Nanchang 3
Shenyang 3
Tianjin 3
Changsha 2
Hangzhou 2
Hebei 2
Indiana 2
Kwun Tong 2
Mapo-gu 2
Munich 2
New York 2
Borås 1
Falls Church 1
Kilburn 1
Las Vegas 1
Los Angeles 1
Ningbo 1
Norwalk 1
Ogden 1
Orange 1
Prescot 1
Sofia 1
Southwark 1
São Paulo 1
Taipei 1
Taizhou 1
Tokyo 1
Toronto 1
Tower Hamlets 1
Zurich 1
Totale 1.439
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Nome #
Highly stable low noise / high power AlN/GaN-on-silicon double heterostructure HEMTs operating at 40 GHz 119
GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues 117
First Reliability Demonstration of Sub-200-nm AlN/GaN-on-Silicon Double-Heterostructure HEMTs for Ka-Band Applications 114
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate 107
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 102
Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons 96
High PAE high reliability AlN/GaN double heterostructure 92
High voltage trapping effects in GaN-based metal-insulator-semiconductor transistors 92
Threshold Voltage Instabilities in D-Mode GaN HEMTs for Power Switching Applications 89
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 86
Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors 86
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure 84
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors 79
Experimental demonstration of weibull distributed failure in p-type GaN high electron mobility transistors under high forward bias stress 76
Temperature-dependent dynamic RON in GaN-based MIS-HEMTs: Role of surface traps and buffer leakage 71
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 65
High performance high reliability AlN/GaN DHFET 61
Time dependent Degradation of AlGaN/GaN HEMTs 55
Evaluation of AlN/GaN/AlGaN double heterostructure on SiC substrate for high power millimeter wave applications 25
Totale 1.616
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Categoria #
all - tutte 6.266
article - articoli 2.921
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 9.187
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020221 0 0 0 0 0 29 36 42 46 29 28 11
2020/2021160 12 14 12 5 13 4 17 16 18 10 26 13
2021/2022257 8 45 32 14 17 7 17 27 16 5 26 43
2022/2023129 28 2 1 8 32 27 0 7 17 1 6 0
2023/202482 9 11 9 3 9 12 4 2 1 1 6 15
2024/2025154 0 23 12 25 62 32 0 0 0 0 0 0
Totale 1.616