SILVESTRI, RICCARDO
 Distribuzione geografica
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Continente #
NA - Nord America 1.974
AS - Asia 789
EU - Europa 325
AF - Africa 130
SA - Sud America 124
OC - Oceania 11
Continente sconosciuto - Info sul continente non disponibili 8
Totale 3.361
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Nazione #
US - Stati Uniti d'America 1.907
SG - Singapore 307
CN - Cina 167
VN - Vietnam 80
BR - Brasile 60
HK - Hong Kong 60
PL - Polonia 39
FR - Francia 38
FI - Finlandia 35
DE - Germania 31
GB - Regno Unito 20
IN - India 17
RU - Federazione Russa 15
SE - Svezia 15
IT - Italia 14
AR - Argentina 13
BD - Bangladesh 13
IE - Irlanda 12
PE - Perù 10
CL - Cile 9
JP - Giappone 9
TR - Turchia 9
BE - Belgio 8
PK - Pakistan 8
SA - Arabia Saudita 8
AE - Emirati Arabi Uniti 7
CO - Colombia 7
GF - Guiana Francese 7
IQ - Iraq 7
IS - Islanda 7
LY - Libia 7
MX - Messico 7
MY - Malesia 7
PY - Paraguay 7
ZA - Sudafrica 7
AL - Albania 6
BB - Barbados 6
CA - Canada 6
DJ - Gibuti 6
ES - Italia 6
ID - Indonesia 6
KE - Kenya 6
KZ - Kazakistan 6
MG - Madagascar 6
NL - Olanda 6
PA - Panama 6
UA - Ucraina 6
AO - Angola 5
CI - Costa d'Avorio 5
DZ - Algeria 5
GH - Ghana 5
HN - Honduras 5
JO - Giordania 5
KG - Kirghizistan 5
PH - Filippine 5
TN - Tunisia 5
TZ - Tanzania 5
VE - Venezuela 5
AD - Andorra 4
AF - Afghanistan, Repubblica islamica di 4
BG - Bulgaria 4
BW - Botswana 4
CH - Svizzera 4
CR - Costa Rica 4
CZ - Repubblica Ceca 4
DO - Repubblica Dominicana 4
EE - Estonia 4
EG - Egitto 4
GA - Gabon 4
GE - Georgia 4
IR - Iran 4
JM - Giamaica 4
KH - Cambogia 4
LU - Lussemburgo 4
MA - Marocco 4
MK - Macedonia 4
NO - Norvegia 4
NP - Nepal 4
SO - Somalia 4
TH - Thailandia 4
TL - Timor Orientale 4
UZ - Uzbekistan 4
ZW - Zimbabwe 4
AM - Armenia 3
AU - Australia 3
BA - Bosnia-Erzegovina 3
BF - Burkina Faso 3
BS - Bahamas 3
BY - Bielorussia 3
CD - Congo 3
CG - Congo 3
CW - ???statistics.table.value.countryCode.CW??? 3
CY - Cipro 3
EC - Ecuador 3
HU - Ungheria 3
KR - Corea 3
LA - Repubblica Popolare Democratica del Laos 3
LB - Libano 3
LC - Santa Lucia 3
LV - Lettonia 3
Totale 3.252
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Città #
San Jose 245
Ashburn 243
Fairfield 236
Woodbridge 209
Singapore 155
Ann Arbor 123
Houston 120
Seattle 106
Cambridge 88
Wilmington 71
Santa Clara 64
Hong Kong 54
Chandler 50
Beijing 39
Bytom 31
Boardman 25
Ho Chi Minh City 24
San Diego 22
Hanoi 20
Lauterbourg 19
Medford 19
Princeton 19
Helsinki 16
Los Angeles 16
Nanjing 13
Munich 12
Orem 12
Des Moines 11
Dublin 10
Jacksonville 8
Buffalo 7
New York 7
São Paulo 7
Antananarivo 6
Nairobi 6
Panama City 6
Redondo Beach 6
Tokyo 6
Tripoli 6
Abidjan 5
Accra 5
Amman 5
Belo Horizonte 5
Bishkek 5
Bridgetown 5
Brooklyn 5
Cayenne 5
Chicago 5
Dar es Salaam 5
Guangzhou 5
London 5
Padova 5
Reykjavik 5
Roxbury 5
Washington 5
Andorra la Vella 4
Dili 4
Djibouti 4
Libreville 4
Lima 4
Luanda 4
Phoenix 4
Tallinn 4
Tirana 4
Warsaw 4
Zhengzhou 4
Amsterdam 3
Antwerp 3
Auckland 3
Belgrade 3
Castries 3
Changsha 3
Chennai 3
Dallas 3
Elk Grove Village 3
Gaborone 3
Haiphong 3
Hangzhou 3
Harare 3
Jiaxing 3
Jinan 3
Kharkiv 3
Lahore 3
Montreal 3
Nanchang 3
Nassau 3
Niamey 3
Oslo 3
Podgorica 3
Riga 3
Shenyang 3
Sofia 3
Suzhou 3
Tashkent 3
Tbilisi 3
Tianjin 3
Ulan Bator 3
Willemstad 3
Yerevan 3
Algiers 2
Totale 2.362
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Nome #
GaN-Based Power HEMTs: Parasitic, Reliability and High Field Issues 234
Degradation of AlGaN/GaN high electron mobility transistors related to hot electrons 208
First Reliability Demonstration of Sub-200-nm AlN/GaN-on-Silicon Double-Heterostructure HEMTs for Ka-Band Applications 208
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 199
Highly stable low noise / high power AlN/GaN-on-silicon double heterostructure HEMTs operating at 40 GHz 195
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors 194
Comparison of the performances of an InAlN/GaN HEMT with a Mo/Au gate or a Ni/Pt/Au gate 193
Threshold Voltage Instabilities in D-Mode GaN HEMTs for Power Switching Applications 191
Electric-field and Thermally-activated Failure Mechanisms of AlGaN/GaN High Electron Mobility Transistors 185
Temperature-dependent dynamic RON in GaN-based MIS-HEMTs: Role of surface traps and buffer leakage 182
High voltage trapping effects in GaN-based metal-insulator-semiconductor transistors 178
Normally-off GaN-HEMTs with p-type gate: Off-state degradation, forward gate stress and ESD failure 176
Impact of Hot Electrons on the Reliability of AlGaN/GaN High Electron Mobility Transistors 175
Experimental demonstration of weibull distributed failure in p-type GaN high electron mobility transistors under high forward bias stress 166
High PAE high reliability AlN/GaN double heterostructure 161
Radiation performance of new semiconductor power devices for the LHC experiment upgrades 158
Time dependent Degradation of AlGaN/GaN HEMTs 138
High performance high reliability AlN/GaN DHFET 138
Evaluation of AlN/GaN/AlGaN double heterostructure on SiC substrate for high power millimeter wave applications 94
Totale 3.373
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Categoria #
all - tutte 10.349
article - articoli 4.722
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 15.071
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202139 0 0 0 0 0 0 0 0 0 0 26 13
2021/2022257 8 45 32 14 17 7 17 27 16 5 26 43
2022/2023129 28 2 1 8 32 27 0 7 17 1 6 0
2023/202482 9 11 9 3 9 12 4 2 1 1 6 15
2024/2025428 0 23 12 25 62 32 8 41 43 11 76 95
2025/20261.483 52 155 204 208 192 59 175 151 143 88 56 0
Totale 3.373